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Register a new userQuantifying mobile ions in perovskite-based devices with temperature-dependent capacitance measurements: frequency versus time domain
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Perovskites have proven to be a promising candidate for highly-efficient solar cells, light-emitting diodes, and X-ray detectors, overcoming limitations of inorganic semiconductors. However, they are notoriously unstable. The main reason for this instability is the migration of mobile ions through the device during operation, as they are mixed ionic-electronic conductors. Here we show how measuring the capacitance in both the frequency and the time domain can be used to study ionic dynamics within perovskite-based devices, quantifying activation energy, diffusion coefficient, sign of charge, concentration, and the length of the ionic double layer in the vicinity of the interfaces. Measuring the transient of the capacitance furthermore allows for distinguishing between ionic and electronic effects.
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Intrinsic limits to temperature-dependent substrate loss for GaN-on-Si technology, due to the change in resistivity of the substrate with temperature, are evaluated using an experimentally validated device simulation framework. Effect of room temperature substrate resistivity on temperature-dependent CPW line loss at various operating frequency bands are then presented. CPW lines for GaN-on-high resistivity Si are shown to have a pronounced temperature-dependence for temperatures above 150{deg}C and have lower substrate losses for frequencies above the X-band. On the other hand, GaN-on-low resistivity Si is shown to be more temperature-insensitive and have lower substrate losses than even HR-Si for lower operating frequencies. The effect of various CPW geometries on substrate loss is also presented to generalize the discussion. These results are expected to act as a benchmark for temperature dependent substrate loss in GaN-on-Si RF technology.
Graphene and related materials can lead to disruptive advances in next generation photonics and optoelectronics. The challenge is to devise growth, transfer and fabrication protocols providing high (>5,000 cm2 V-1 s-1) mobility devices with reliable performance at the wafer scale. Here, we present a flow for the integration of graphene in photonics circuits. This relies on chemical vapour deposition (CVD) of single layer graphene (SLG) matrices comprising up to ~12000 individual single crystals (SCs), grown to match the geometrical configuration of the devices in the photonic circuit. This is followed by a transfer approach which guarantees coverage over ~80% of the device area, and integrity for up to 150 mm wafers, with room temperature mobility ~5000 cm2 V-1 s-1. We use this process flow to demonstrate double SLG electro-absorption modulators with modulation efficiency ~0.25, 0.45, 0.75, 1 dB V-1 for device lengths ~30, 60, 90, 120 {mu}m. The data rate is up to 20 Gbps. Encapsulation with single-layer hBN is used to protected SLG during plasma-enhanced CVD of Si3N4, ensuring reproducible device performance. Our full process flow (from growth to device fabrication) enables the commercial implementation of graphene-based photonic devices.
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A water-based switchable frequency selective rasorber with polarization selectivity using the Great Wall structures is presented in this paper. The proposed structure comprises a container containing horizontal and vertical channels enabling dividable injection of water, and a cross-gap FSS. The novelty of the design lies in its switchability among four different operating states by injecting water or not into the water channels. When the container is empty, the structure acts as a polarization-intensive FSS with a -0.42 dB insertion loss passband at 3.75 GHz. When the horizontal channel is filled with water and there is no water in the vertical channel, this structure can be used as an FSR with single polarization selectivity. The FSR with -10 dB absorption band from 6.8 GHz to 18.8 GHz only allows certain polarized electromagnetic (EM) waves to pass at 3.1 GHz with an insertion loss of -0.78 dB, while another polarized EM wave cannot pass. When the container is full of water, the structure operates as an absorber with a reflection band below the absorption band, where neither of polarization EM waves can transmit. Besides, a reconfigurable water-based FSR automatic control system is built to achieve state switching and temperature constancy of the water within the container. Ultimately, a prototype of the presented design is fabricated, simulated and measured to verify the feasibility. This work has potential application in radome design to realize the out-of-band RCS reduction.
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