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Register a new userSelf-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films
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We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionally high temperature of 1180 {deg}C. In contrast to previous reports, the nanowires are well separated and do not suffer from pronounced coalescence. This achievement is explained by sufficient Al adatom diffusion on the substrate and the nanowire sidewalls. The high crystalline quality of the nanowires is evidenced by the observation of near band edge emission in the cathodoluminescence spectrum. The key factor for the low nanowire coalescence is the TiN film, which spectroscopic ellipsometry and Raman spectroscopy indicate to be stoichiometric. Its metallic nature will be beneficial for optoelectronic devices employing these nanowires as the basis for (Al,Ga)N/AlN heterostructures emitting in the deep ultraviolet spectral range.
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In order to get homogeneous nanostructured Aluminum Nitride deposits, thin films were grown at room temperature on [001] Si substrates by radio frequency magnetron reactive sputtering. The deposits were analysed by Transmission Electron Microscopy, energy dispersive X-ray spectroscopy and Auger electron spectroscopy. Their microstructure and chemical composition were studied versus the plasma working pressure and the radio frequency power. Systematic analysis of cross views of the films allowed the authors to draw a microstructure/process parameters map. Four microstructural types were distinguished according to the decrease of the deposition rate. One is the well-known columnar microstructure. The second one is made of interrupted columns or fibrous grains. The third one is made of nano-sized particles (size of the particles ranges from 1.7 to 8 nm). The fourth and last microstructure is amorphous. The deposit morphology-process parameters correlation is commented on.
We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double heterostructure FETs exhibit a two- dimensional electron gas (2DEG) density in excess of 2x10^13/cm2. Ohmic contacts to the 2DEG channel were formed by n+ GaN MBE regrowth process, with a contact resistance of 0.13 Ohm-mm. Raman spectroscopy using the quantum well as an optical marker reveals the strain in the quantum well, and strain relaxation in the regrown GaN contacts. A 65-nm-long rectangular-gate device showed a record high DC drain current drive of 2.0 A/mm and peak extrinsic transconductance of 250 mS/mm. Small-signal RF performance of the device achieved current gain cutoff frequency fT~120 GHz. The DC and RF performance demonstrate that bulk AlN substrates offer an attractive alternative platform for strained quantum well nitride transistors for future high-voltage and high-power microwave applications.
From first-principles calculations, we predict that transition metal (TM) atom doped silicon nanowires have a half-metallic ground state. They are insulators for one spin-direction, but show metallic properties for the opposite spin direction. At high coverage of TM atoms, ferromagnetic silicon nanowires become metallic for both spin-directions with high magnetic moment and may have also significant spin-polarization at the Fermi level. The spin-dependent electronic properties can be engineered by changing the type of dopant TM atoms, as well as the diameter of the nanowire. Present results are not only of scientific interest, but can also initiate new research on spintronic applications of silicon nanowires.
Copper ferrite thin films were rf sputtered at a power of 50W. The as deposited films were annealed in air at 800{deg}C and slow cooled. The transmission electron microscope (TEM) studies were carried out on as deposited as well as on slow cooled film. Significantly larger defect concentration, including stacking faults, was observed in 50W as deposited films than the films deposited at a higher rf power of 200W. The film annealed at 800{deg}C and then slow cooled showed an unusual grain growth upto 180nm for a film thickness of ~240nm. These grains showed Kikuchi pattern.
Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material,[1] a light emitting medium in silicon-integrated lasers,[2,3] and a plasmonic conductor for bio-sensing.[4,5] Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (10^19 to 10^20 cm-3) low-resistivity (10^-4 Ohmcm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based doping technologies.[6] We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory.
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