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A tuneable telecom-wavelength entangled light emitting diode

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 Added by Jan Huwer
 Publication date 2019
  fields Physics
and research's language is English




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Entangled light emitting diodes based on semiconductor quantum dots are promising devices for security sensitive quantum network applications, thanks to their natural lack of multi photon-pair generation. Apart from telecom wavelength emission, network integrability of these sources ideally requires electrical operation for deployment in compact systems in the field. For multiplexing of entangled photons with classical data traffic, emission in the telecom O-band and tuneability to the nearest wavelength channel in compliance with coarse wavelength division multiplexing standards (20 nm channel spacing) is highly desirable. Here we show the first fully electrically operated telecom entangled light emitting diode with wavelength tuneability of more than 25nm, deployed in an installed fiber network. With the source tuned to 1310.00 nm, we demonstrate multiplexing of true single entangled photons with classical data traffic and achieve entanglement fidelities above 95% on an installed fiber in a city.



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We report the realization of a fiber coupled polarization entangled photon-pair source at 1310 nm based on a birefringent titanium in-diffused waveguide integrated on periodically poled lithium niobate. By taking advantage of a dedicated and high-performance setup, we characterized the quantum properties of the pairs by measuring two-photon interference in both Hong-Ou-Mandel and standard Bell inequality configurations. We obtained, for the two sets of measurements, interference net visibilities reaching nearly 100%, which represent important and competitive results compared to similar waveguide-based configurations already reported. These results prove the relevance of our approach as an enabling technology for long-distance quantum communication.
We demonstrate Cooper-pairs drastic enhancement effect on band-to-band radiative recombination in a semiconductor. Electron Cooper pairs injected from a superconducting electrode into an active layer by the proximity effect recombine with holes injected from a p-type electrode and dramatically accelerate the photon generation rates of a light emitting diode in the optical-fiber communication band. Cooper pairs are the condensation of electrons at a spin-singlet quantum state and this condensation leads to the observed enhancement of the electric-dipole transitions. Our results indicate the possibility to open up new interdisciplinary fields between superconductivity and optoelectronics.
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The realization of a future quantum Internet requires processing and storing quantum information at local nodes, and interconnecting distant nodes using free-space and fibre-optic links. Quantum memories for light are key elements of such quantum networks. However, to date, neither an atomic quantum memory for non-classical states of light operating at a wavelength compatible with standard telecom fibre infrastructure, nor a fibre-based implementation of a quantum memory has been reported. Here we demonstrate the storage and faithful recall of the state of a 1532 nm wavelength photon, entangled with a 795 nm photon, in an ensemble of cryogenically cooled erbium ions doped into a 20 meter-long silicate fibre using a photon-echo quantum memory protocol. Despite its currently limited efficiency and storage time, our broadband light-matter interface brings fibre-based quantum networks one step closer to reality. Furthermore, it facilitates novel tests of light-matter interaction and collective atomic effects in unconventional materials.
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Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms either formed by impurities or quantum dots have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface needed for large-distance exchange of information have not yet been isolated in such a prevailing semiconductor. Here we show the isolation of single optically-active point defects in a commercial silicon-on-insulator wafer implanted with carbon atoms. These artificial atoms exhibit a bright, linearly polarized single-photon emission at telecom wavelengths suitable for long-distance propagation in optical fibers. Our results demonstrate that despite its small bandgap (~ 1.1 eV) a priori unfavorable towards such observation, silicon can accommodate point defects optically isolable at single scale, like in wide-bandgap semiconductors. This work opens numerous perspectives for silicon-based quantum technologies, from integrated quantum photonics to quantum communications and metrology.
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