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Register a new userElectronic and Magnetic Characterization of Epitaxial VSe$_2$ Monolayers on Superconducting NbSe$_2$
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Vertical integration of two-dimensional (2D) van der Waals (vdW) materials with different quantum ground states is predicted to lead to novel electronic properties that are not found in the constituent layers. Here, we present the direct synthesis of superconductor-magnet hybrid heterostructures by combining superconducting niobium diselenide (NbSe$_2$) with the monolayer (ML) vanadium diselenide (VSe$_2$). More significantly, the in-situ growth in ultra-high vacuum (UHV) allows to produce a clean and an atomically sharp interfaces. Combining different characterization techniques and density-functional theory (DFT) calculations, we investigate the electronic and magnetic properties of VSe$_2$ on NbSe$_2$. Low temperature scanning tunneling microscopy (STM) measurements demonstrate a reduction of the superconducting gap on VSe$_2$ layer. This together with the lack of charge density wave signatures indicates magnetization of the sheet, but not of a conventional itinerant ferromagnet.
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The ability to imprint a given material property to another through proximity effect in layered two-dimensional materials has opened the way to the creation of designer materials. Here, we use molecular-beam epitaxy (MBE) for a direct synthesis of a superconductor-magnet hybrid heterostructure by combining superconducting niobium diselenide (NbSe$_2$) with the monolayer ferromagnetic chromium tribromide (CrBr$_3$). Using different characterization techniques and density-functional theory (DFT) calculations, we have confirmed that the CrBr$_3$ monolayer retains its ferromagnetic ordering with a magnetocrystalline anisotropy favoring an out-of-plane spin orientation. Low-temperature scanning tunneling microscopy (STM) measurements show a slight reduction of the superconducting gap of NbSe$_2$ and the formation of a vortex lattice on the CrBr$_3$ layer in experiments under an external magnetic field. Our results contribute to the broader framework of exploiting proximity effects to realize novel phenomena in 2D heterostructures.
We present a study on the growth and characterization of high-quality single-layer MoS$_2$ with a single orientation, i.e. without the presence of mirror domains. This single orientation of the MoS$_2$ layer is established by means of x-ray photoelectron diffraction. The high quality is evidenced by combining scanning tunneling microscopy with x-ray photoelectron spectroscopy measurements. Spin- and angle-resolved photoemission experiments performed on the sample revealed complete spin-polarization of the valence band states near the K and -K points of the Brillouin zone. These findings open up the possibility to exploit the spin and valley degrees of freedom for encoding and processing information in devices that are based on epitaxially grown materials.
We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectroscopy indicate high quality thin films. Further studies show that monolayer VSe$_2$ films on GaAs are not air-stable and are susceptible to oxidation within a matter of hours, which indicates that a protective capping layer should be employed for device applications. This work demonstrates that VSe$_2$, a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for 2D/3D hybrid devices.
Recent experimental studies have found that magnetic impurities deposited on superconducting monolayer NbSe$_2$ generate coupled Yu-Shiba-Rusinov bound states. Here we consider ferromagnetic chains of impurities which induce a Yu-Shiba-Rusinov band and harbor Majorana bound states at the chain edges. We show that these topological phases are stabilized by strong Ising spin-orbit coupling in the monolayer and examine the conditions under which Majorana phases appear as a function of distance between impurities, impurity spin projection, orientation of chains on the surface of the monolayer, and strength of magnetic exchange energy between impurity and superconductor.
We report the preparation of high-quality single crystal of Bi$_2$Se$_3$, a well-known topological insulator and its Ti-doped compositions using Bridgeman technique. Prepared single crystals were characterized by x-ray diffraction (XRD) to check the crystalline structure and energy dispersive analysis of x-rays for composition analysis. The XRD data of Ti-doped compounds show a small shift with respect to normal Bi$_2$Se$_3$ indicating changes in the lattice parameters while the structure type remained unchanged; this also establishes that Ti goes to the intended substitution sites. All the above analysis establishes successful preparation of these crystals with high quality using Bridgman technique. We carried out x-ray photo-emission spectroscopy to study the composition via investigating the core level spectra. Bi$_2$Se$_3$ spectra exhibit sharp and distinct features for the core levels and absence of impurity features. The core level spectra of the Ti-doped sample exhibit distinct signal due to Ti core levels. The analysis of the spectral features reveal signature of plasmon excitation and final state satellites; a signature of finite electron correlation effect in the electronic structure.
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