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Gallium phosphide as a piezoelectric platform for quantum optomechanics

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 Added by Robert Stockill
 Publication date 2019
  fields Physics
and research's language is English




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Recent years have seen extraordinary progress in creating quantum states of mechanical oscillators, leading to great interest in potential applications for such systems in both fundamental as well as applied quantum science. One example is the use of these devices as transducers between otherwise disparate quantum systems. In this regard, a promising approach is to build integrated piezoelectric optomechanical devices, that are then coupled to microwave circuits. Optical absorption, low quality factors and other challenges have up to now prevented operation in the quantum regime, however. Here, we design and characterize such a piezoelectric optomechanical device fabricated from gallium phosphide in which a 2.9~GHz mechanical mode is coupled to a high quality factor optical resonator in the telecom band. The large electronic bandgap and the resulting low optical absorption of this new material, on par with devices fabricated from silicon, allows us to demonstrate quantum behavior of the structure. This not only opens the way for realizing noise-free quantum transduction between microwaves and optics, but in principle also from various color centers with optical transitions in the near visible to the telecom band.



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125 - A. G. Kuhn 2011
We present a new micromechanical resonator designed for cavity optomechanics. We have used a micropillar geometry to obtain a high-frequency mechanical resonance with a low effective mass and a very high quality factor. We have coated a 60-$mu$m diameter low-loss dielectric mirror on top of the pillar and are planning to use this micromirror as part of a high-finesse Fabry-Perot cavity, to laser cool the resonator down to its quantum ground state and to monitor its quantum position fluctuations by quantum-limited optical interferometry.
Gallium phosphide (GaP) is an indirect bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties---including large $chi^{(2)}$ and $chi^{(3)}$ coefficients, a high refractive index ($>3$), and transparency from visible to long-infrared wavelengths ($0.55-11,mu$m)---its application as an integrated photonics material has been little studied. Here we introduce GaP-on-insulator as a platform for nonlinear photonics, exploiting a direct wafer bonding approach to realize integrated waveguides with 1.2 dB/cm loss in the telecommunications C-band (on par with Si-on-insulator). High quality $(Q> 10^5)$, grating-coupled ring resonators are fabricated and studied. Employing a modulation transfer approach, we obtain a direct experimental estimate of the nonlinear index of GaP at telecommunication wavelengths: $n_2=1.2(5)times 10^{-17},text{m}^2/text{W}$. We also observe Kerr frequency comb generation in resonators with engineered dispersion. Parametric threshold powers as low as 3 mW are realized, followed by broadband ($>100$ nm) frequency combs with sub-THz spacing, frequency-doubled combs and, in a separate device, efficient Raman lasing. These results signal the emergence of GaP-on-insulator as a novel platform for integrated nonlinear photonics.
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