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Register a new userBAlGaN alloys nearly lattice-matched to AlN for efficient UV LEDs
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Added by
Emmanouil Kioupakis
Publication date
2019
fields
Physics
and research's language is
English
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The lattice mismatch between AlGaN and AlN substrates limits the design and efficiency of UV LEDs, but it can be mitigated by the co-incorporation of boron. We employ hybrid density functional theory to investigate the thermodynamic, structural, and electronic properties of BAlGaN alloys. We show that BAlGaN can lattice match AlN with band gaps that match AlGaN of the same gallium content. We predict that BAlGaN emits transverse-electric polarized for gallium content of ~45% or more. Our results indicate that BAlGaN alloys are promising materials for higher efficiency UV optoelectronic devices on bulk AlN substrates.
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Electrically injected deep ultra-violet (UV) emission is obtained using monolayer (ML) thin GaN/AlN quantum structures as active regions. The emission wavelength is tuned by controlling the thickness of ultrathin GaN layers with monolayer precision using plasma assisted molecular beam epitaxy (PAMBE). Single peaked emission spectra is achieved with narrow full width at half maximum (FWHM) for three different light emitting diodes (LEDs) operating at 232 nm, 246 nm and 270 nm. 232 nm (5.34 eV) is the shortest EL emission wavelength reported so far using GaN as the light emitting material and employing polarization-induced doping.
We report epitaxial growth of a-plane (11-20) AlInN layers nearly-lattice-matched to GaN. Unlike for c-plane oriented epilayers, a-plane Al_{1-x}In_{x}N cannot be simultaneously lattice-matched to GaN in both in-plane directions. We study the influence of temperature on indium incorporation and obtain nearly-lattice-matched Al_{0.81}In_{0.19}N at a growth temperature of 760^{o}C. We outline a procedure to check in-plane lattice mismatch using high resolution x-ray diffraction, and evaluate the strain and critical thickness. Polarization-resolved optical transmission measurements of the Al_{0.81}In_{0.19}N epilayer reveal a difference in bandgap of ~140 meV between (electric field) E_parallel_c [0001]-axis and E_perpendicular_c conditions with room-temperature photoluminescence peaked at 3.38 eV strongly polarized with E_parallel_c, in good agreement with strain-dependent band-structure calculations.
Half-Heusler (HH) phases (space group F43m, Clb) are increasingly gaining attention as promising thermoelectric materials in view of their thermal stability, scalability, and environmental benignity as well as efficient power output. Until recently, the verifiable dimensionless figure of merit (ZT) of HH phases has remained moderate near 1, which limits the power conversion efficiency of these materials. We report herein ZT~1.3 in n-type (Hf,Zr)NiSn alloys near 850 K developed through elemental substitution and simultaneously embedment of nanoparticles in the HH matrix, obtained by annealing the samples close to their melting temperatures. Introduction of mass fluctuation and scattering centers play a key role in the high ZT measured, as shown by the reduction of thermal conductivity and increase of thermopower. Based on computation, the power conversion efficiency of a n-p couple module based on the new n-type (Hf,Zr,Ti)NiSn particles-in-matrix composite and recently reported high-ZT p-type HH phases is expected to reach 13%, comparable to that of state-of-the-art materials, but with the mentioned additional materials and environmental attributes. Since the high efficiency is obtained without tuning the microstructure of the Half-Heusler phases, it leaves room for further optimization.
In this paper a multi-band envelope-function Hamiltonian for lattice-matched semiconductor heterostructures is derived from first-principles norm-conserving pseudopotentials. The theory is applicable to isovalent or heterovalent heterostructures with macroscopically neutral interfaces and no spontaneous bulk polarization. The key assumption -- proved in earlier numerical studies -- is that the heterostructure can be treated as a weak perturbation with respect to some periodic reference crystal, with the nonlinear response small in comparison to the linear response. Quadratic response theory is then used in conjunction with k.p perturbation theory to develop a multi-band effective-mass Hamiltonian (for slowly varying envelope functions) in which all interface band-mixing effects are determined by the linear response. To within terms of the same order as the position dependence of the effective mass, the quadratic response contributes only a bulk band offset term and an interface dipole term, both of which are diagonal in the effective-mass Hamiltonian. Long-range multipole Coulomb fields arise in quantum wires or dots, but have no qualitative effect in two-dimensional systems beyond a dipole contribution to the band offsets.
We show that the morphology of the initial monolayers of InP on Al0.48In0.52As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by-layer growth mode of lattice-matched systems, but instead develops a number of low-dimensional structures, e.g., quantum dots and wires. We discuss how the macroscopically strain-free heteroepitaxy might be strongly affected by local phase separation/alloying-induced strain and that the preferred aggregation of adatom species on the substrate surface and reduced wettability of InP on AlInAs surfaces might be the cause of the unusual (step) organization and morphology
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