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Single-photon counters are single-pixel binary devices that click upon the absorption of a photon but obscure its spectral information, whereas resolving the colour of detected photons has been in critical demand for frontier astronomical observation, spectroscopic imaging and wavelength division multiplexed quantum communications. Current implementations of single-photon spectrometers either consist of bulky wavelength-scanning components or have limited detection channels, preventing parallel detection of broadband single photons with high spectral resolutions. Here, we present the first broadband chip-scale single-photon spectrometer covering both visible and infrared wavebands spanning from 600nm to 2000nm. The spectrometer integrates an on-chip dispersive echelle grating with a single-element propagating superconducting nanowire detector of ultraslow-velocity for mapping the dispersed photons with high spatial resolutions. The demonstrated on-chip single-photon spectrometer features small device footprint, high robustness with no moving parts and meanwhile offers more than 200 equivalent wavelength detection channels with further scalability.
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We demonstrate waveguide-integrated superconducting nanowire single-photon detectors on thin-film lithium niobate (LN). Using a 250 um-long NbN superconducting nanowire lithographically defined on top of a 125 um-long LN nanowaveguide, on-chip detection efficiency of 46% is realized with simultaneous high performance in dark count rate and timing jitter. As LN possesses high second-order nonlinear c{hi}(2) and electro-optic properties, an efficient single-photon detector on thin-film LN opens up the possibility to construct small scale fully-integrated quantum photonic chip which includes single-photon sources, filters, tunable quantum gates and detectors.
Photonic quantum technologies such as quantum cryptography, photonic quantum metrology, photonic quantum simulators and computers will largely benefit from highly scalable and small footprint quantum photonic circuits. To perform fully on-chip quantum photonic operations, three basic building blocks are required: single-photon sources, photonic circuits and single-photon detectors. Highly integrated quantum photonic chips on silicon and related platforms have been demonstrated incorporating only one or two of these basic building blocks. Previous implementations of all three components were mainly limited by laser stray light, making temporal filtering necessary or required complex manipulation to transfer all components onto one chip. So far, a monolithic, simultaneous implementation of all elements demonstrating single-photon operation remains elusive. Here, we present a fully-integrated Hanbury-Brown and Twiss setup on a micron-sized footprint, consisting of a GaAs waveguide embedding quantum dots as single-photon sources, a waveguide beamsplitter and two superconducting nanowire single-photon detectors. This enables a second-order correlation measurement at the single-photon level under both continuous-wave and pulsed resonant excitation.
We demonstrate the integration of amorphous tungsten silicide superconducting nanowire single-photon detectors on titanium in-diffused lithium niobate waveguides. We show proof-of-principle detection of evanescently-coupled photons of 1550nm wavelength using bidirectional waveguide coupling for two orthogonal polarization directions. We investigate the internal detection efficiency as well as detector absorption using coupling-independent characterization measurements. Furthermore, we describe strategies to improve the yield and efficiency of these devices.
We present an alternative approach to the fabrication of highly efficient superconducting nanowire single-photon detectors (SNSPDs) based on tungsten silicide. Using well-established technologies for the deposition of dielectric mirrors and anti-reflection coatings in conjunction with an embedded WSi bilayer photon absorber structure, we fabricated a bandwidth-enhanced detector. It exhibits system detection efficiencies (SDE) higher than $left(87.1pm1.3right),%$ in the range from $1450,mathrm{nm}$ to $1640,mathrm{nm}$, with a maximum of $left(92.9pm1.1right),%$ at $1515,mathrm{nm}$. Our measurements indicate SDE enhancements of up to $left(18.4pm1.7right),%$ over a single-absorber WSi SNSPD. The latter has been optimized for 1550 nm for comparison and exhibits maximum SDE of $left(93.5pm1.2right),%$ at 1555 nm. We emphasize that our technological approach has been tested with, but is not limited to, the wavelengths and absorber material presented here. It could be adapted flexibly for multi-color detector systems from the ultraviolet to the mid-infrared wavelength range. This bears the potential for significant improvements in many current quantum optical experiments and applications as well as for detector commercialization.
Counting rate is a key parameter of superconducting nanowire single photon detectors (SNSPD) and is determined by the current recovery time of an SNSPD after a detection event. We propose a new method to study the transient detection efficiency (DE) and pulse amplitude during the current recovery process by statistically analyzing the single photon response of an SNSPD under photon illumination with a high repetition rate. The transient DE results match well with the DEs deduced from the static current dependence of DE combined with the waveform of a single-photon detection event. This proves that the static measurement results can be used to analyze the transient current recovery process after a detection event. The results are relevant for understanding the current recovery process of SNSPDs after a detection event and for determining the counting rate of SNSPDs.
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