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Register a new userReal-Space Investigation of the Charge Density Wave in VTe2 Monolayer with Rotational and Mirror Symmetries Broken
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Recently the charge density wave (CDW) in vanadium dichalcogenides have attracted increasing research interests, but a real-space investigation on the symmetry breaking of the CDW state in VTe2 monolayer is still lacking. We have investigated the CDW of VTe2 monolayer by low energy electron diffraction (LEED) and scanning tunneling microscope (STM). While the LEED experiments revealed a (4X4) CDW transition at 192+-2 K, our low-temperature STM experiments resolved the (4X4) lattice distortions and charge-density modulation in real space, and further unveiled a 1D modulation that breaks the three-fold rotational and mirror symmetries in the CDW state. In accordance with the CDW state at low temperature, a CDW gap of 12 meV was detected by scanning tunneling spectroscopy (STS) at 4.9 K. Our work provides real-space evidence on the symmetry breaking of the (4X4) CDW state in VTe2 monolayer, and implies there is a certain mechanism, beyond the conventional Fermi surface nesting or the q-dependent electron-phonon coupling, is responsible for the formation of CDW state in VTe2 monolayer.
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Charge density waves in transition metal dichalcogenides have been intensively studied for their close correlation with Mott insulator, charge-transfer insulator, and superconductor. VTe2 monolayer recently comes into sight because of its prominent electron correlations and the mysterious origin of CDW orders. As a metal of more than one type of charge density waves, it involves complicated electron-electron and electron-phonon interactions. Through a scanning tunneling microscopy study, we observed triple-Q 4-by-4 and single-Q 4-by-1 modulations with significant charge and orbital separation. The triple-Q 4-by-4 order arises strongly from the p-d hybridized states, resulting in a charge distribution in agreement with the V-atom clustering model. Associated with a lower Fermi level, the local single-Q 4-by-1 electronic pattern is generated with the p-d hybridized states remaining 4-by-4 ordered. In the spectroscopic study, orbital- and atomic- selective charge-density-wave gaps with the size up to ~400 meV were resolved on the atomic scale.
We present a combined experimental and theoretical study of monolayer VTe2 grown on highly oriented pyrolytic graphite by molecular-beam epitaxy. Using various in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, together with theoretical analysis by density functional theory calculations, we demonstrate direct evidence of the metallic 1T phase and 3d1 electronic configuration in monolayer VTe2 that also features a (4 x 4) charge density wave order at low temperatures. In contrast to previous theoretical predictions, our element-specific characterization by X-ray magnetic circular dichroism rules out a ferromagnetic order intrinsic to the monolayer. Our findings provide essential knowledge necessary for understanding this interesting yet less explored metallic monolayer in the emerging family of van der Waals magnets.
Despite the progress made in successful prediction of many classes of weakly-correlated topological materials, it is not clear how a topological order can emerge from interacting orders and whether or not a charge ordered topological state can exist in a two-dimensional (2D) material. Here, through first-principles modeling and analysis, we identify a 2$times$2 charge density wave (CDW) phase in monolayer $2H$-NbSe$_2$ that harbors coexisting quantum spin Hall (QSH) insulator, topological crystalline insulator (TCI) and topological nodal line (TNL) semimetal states. The topology in monolayer NbSe$_2$ is driven by the formation of the CDW and the associated symmetry-breaking periodic lattice distortions and not via a pre-existing topology. Our finding of an emergent triple-topological state in monolayer $2H$-NbSe$_2$ will offer novel possibilities for exploring connections between different topologies and a unique materials platform for controllable CDW-induced topological states for potential applications in quantum electronics and spintronics and Majorana-based quantum computing.
Via spin-polarized scanning tunneling microscopy, we revealed a long-range ordered spin density wave (SDW) for the first time on a Cr (001) surface, corresponding to the well-known incommensurate SDW of bulk Cr. It displays a (~ 6.0 nm) long-period spin modulation in each (001) plane and an anti-phase behavior between adjacent planes, which are confirmed by changing the magnetization of the tip. Meanwhile, we simultaneously observed the coexisting charge density wave (CDW) with half the period of the SDW. Taking advantage of real-space measurement, we found the charge and spin modulations are in-phase, and their domain structures are highly correlated. Surprisingly, the phase of CDW in dI/dV map displays a {pi} shift around a density-of-states dip at about -22 meV, indicating an anomalous CDW gap opened below EF. These observations support that the CDW is a secondary order driven by SDW. Therefore, our work is not only the first real space characterization of incommensurate SDW, but also provide new insights on how SDW and CDW coexist.
In this paper, the completed investigation of a possible superconducting phase in monolayer indium selenide is determined using first-principles calculations for both the hole and electron doping systems. The hole-doped dependence of the Fermi surface is exclusively fundamental for monolayer InSe. It leads to the extensive modification of the Fermi surface from six separated pockets to two pockets by increasing the hole densities. For low hole doping levels of the system, below the Lifshitz transition point, superconductive critical temperatures $T_c sim 55-75$ K are obtained within anisotropic Eliashberg theory depending on varying amounts of the Coulomb potential from 0.2 to 0.1. However, for some hole doping above the Lifshitz transition point, the combination of the temperature dependence of the bare susceptibility and the strong electron-phonon interaction gives rise to a charge density wave that emerged at a temperature far above the corresponding $T_c$. Having included non-adiabatic effects, we could carefully analyze conditions for which either a superconductive or charge density wave phase occurs in the system. In addition, monolayer InSe becomes dynamically stable by including non-adiabatic effects for different carrier concentrations at room temperature.
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