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Register a new userSingle-photon emission mediated by single-electron tunneling in plasmonic nanojunctions
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Added by
Quentin Schaeverbeke
Publication date
2019
fields
Physics
and research's language is
English
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Recent scanning tunnelling microscopy (STM) experiments reported single-molecule fluorescence induced by tunneling currents in the nanoplasmonic cavity formed by the STM tip and the substrate.The electric field of the cavity mode couples with the current-induced charge fluctuations of the molecule, allowing the excitation of the mode. We investigate theoretically this system for the experimentally relevant limit of large damping rate $kappa$ for the cavity mode and arbitrary coupling strength to a single-electronic level. We find that for bias voltages close to the first inelastic threshold of photon emission, the emitted light displays anti-bunching behavior with vanishing second-order photon correlation function. At the same time, the current and the intensity of emitted light display Franck--Condon steps at multiples of the cavity frequency $omega_c$ with a width controlled by $kappa$ rather than the temperature $T$. For large bias voltages, we predict strong photon bunching of the order of the $kappa/Gamma$ where $Gamma$ is the electronic tunneling rate. Our theory thus predicts that strong coupling to a single level allows current-driven non-classical light emission.
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We investigate the statistics of photons emitted by tunneling electrons in a single electronic level plasmonic nanojunction. We compute the waiting-time distribution of successive emitted photons $w(tau)$. When the cavity damping rate $kappa$ is larger than the electronic tunneling rate $Gamma$, we show that in the photon-antibunching regime, $w(tau)$ indicates that the average delay-time between two successive photon emission events is given by $1/Gamma$. This is in contrast with the usually considered second-order correlation function of emitted photons, $g^{(2)}(tau)$, which displays the single time scale $1/kappa$. Our analysis shows a relevant example for which $w(tau)$ gives independent information on the photon-emission statistics with respect to $g^{(2)}(tau)$, leading to a physical insight on the problem. We discuss how this information can be extracted from experiments even in presence of a non-perfect photon detection yield.
In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz, the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states, and achieve robust current quantization up to a few gigahertz. We show that the fidelity of the electron capture depends on the sequence in which the parasitic states become available for loading, resulting in distinctive frequency dependent features in the pumped current.
We report on the selective excitation of single impurity-bound exciton states in a GaAs double quantum well (DQW). The structure consists of two quantum wells (QWs) coupled by a thin tunnel barrier. The DQW is subject to a transverse electric field to create spatially indirect inter-QW excitons with electrons and holes located in different QWs. We show that the presence of intra-QW charged excitons (trions) blocks carrier tunneling across the barrier to form indirect excitons, thus opening a gap in their emission spectrum. This behavior is attributed to the low binding energy of the trions. Within the tunneling blockade regime, emission becomes dominated by processes involving excitons bound to single shallow impurities, which behave as two-level centers activated by resonant tunneling. The quantum nature of the emission is confirmed by the anti-bunched photon emission statistics. The narrow distribution of emission energies ($sim 10$~meV) and the electrical connection to the QWs make these single-exciton centers interesting candidates for applications in single-photon sources.
An important consequence of the discovery of giant magnetoresistance in metallic magnetic multilayers is a broad interest in spin dependent effects in electronic transport through magnetic nanostructures. An example of such systems are tunnel junctions -- single-barrier planar junctions or more complex ones. In this review we present and discuss recent theoretical results on electron and spin transport through ferromagnetic mesoscopic junctions including two or more barriers. Such systems are also called ferromagnetic single-electron transistors. We start from the situation when the central part of a device has the form of a magnetic (or nonmagnetic) metallic nanoparticle. Transport characteristics reveal then single-electron charging effects, including the Coulomb staircase, Coulomb blockade, and Coulomb oscillations. Single-electron ferromagnetic transistors based on semiconductor quantum dots and large molecules (especially carbon nanotubes) are also considered. The main emphasis is placed on the spin effects due to spin-dependent tunnelling through the barriers, which gives rise to spin accumulation and tunnel magnetoresistance. Spin effects also occur in the current-voltage characteristics, (differential) conductance, shot noise, and others. Transport characteristics in the two limiting situations of weak and strong coupling are of particular interest. In the former case we distinguish between the sequential tunnelling and cotunneling regimes. In the strong coupling regime we concentrate on the Kondo phenomenon, which in the case of transport through quantum dots or molecules leads to an enhanced conductance and to a pronounced zero-bias Kondo peak in the differential conductance.
A hallmark of quantum control is the ability to manipulate quantum emission at the nanoscale. Through scanning tunneling microscopy induced luminescence (STML) we are able to generate plasmonic light originating from inelastic tunneling processes that occur in a few-nanometer thick molecular film of C$_{60}$ deposited on Ag(111). Single photon emission, not of excitonic origin, occurs with a 1/$e$ lifetime of a tenth of a nanosecond or less, as shown through Hanbury Brown and Twiss photon intensity interferometry. We have performed tight-binding calculations of the electronic structure for the combined Ag-C$_{60}$-tip system and obtained good agreement with experiment. The tunneling happens through electric field induced split-off states below the C$_{60}$ LUMO band, which leads to a Coulomb blockade effect and single photon emission. The use of split-off states is shown to be a general technique that has special relevance for narrowband materials with a large bandgap.
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