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The generalized tight-binding model is developed to investigate the magneto-electronic properties in twisted bilayer graphene system. All the interlayer and intralayer atomic interactions are included in the Moire superlattice. The twisted bilayer graphene system is a zero-gap semiconductor with double-degenerate Dirac-cone structures, and saddle-point energy dispersions appearing at low energies for cases of small twisting angles. There exist rich and unique magnetic quantization phenomena, in which many Landau-level subgroups are induced due to specific Moire zone folding through modulating the various stacking angles. The Landau-level spectrum shows hybridized characteristics associated with the those in monolayer, and AA $&$ AB stackings. The complex relations among the different sublattices on the same and different graphene layers are explored in detail.
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We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- emph{biased bilayer}. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its 4-band and 2-band continuum approximations, and the 4-band model is shown to be always a suitable approximation for the conditions realized in experiments. The model is applied to real biased bilayer devices, either made out of SiC or exfoliated graphene, and good agreement with experimental results is found, indicating that the model is capturing the key ingredients, and that a finite gap is effectively being controlled externally. Analysis of experimental results regarding the electrical noise and cyclotron resonance further suggests that the model can be seen as a good starting point to understand the electronic properties of graphene bilayer. Also, we study the effect of electron-hole asymmetry terms, as the second-nearest-neighbor hopping energies $t$ (in-plane) and $gamma_{4}$ (inter-layer), and the on-site energy $Delta$.
Multilayered van der Waals structures often lack periodicity, which difficults their modeling. Building on previous work for bilayers, we develop a tight-binding based, momentum space formalism capable of describing incommensurate multilayered van der Waals structures for arbitrary lattice mismatch and/or misalignment between different layers. We demonstrate how the developed formalism can be used to model angle-resolved photoemission spectroscopy measurements, and scanning tunnelling spectroscopy which can probe the local and total density of states. The general method is then applied to incommensurate twisted trilayer graphene structures. It is found that the coupling between the three layers can significantly affect the low energy spectral properties, which cannot be simply attributed to the pairwise hybridization between the layers.
A detailed understanding of interacting electrons in twisted bilayer graphene (tBLG) near the magic angle is required to gain insights into the physical origin of the observed broken symmetry phases. Here, we present extensive atomistic Hartree theory calculations of the electronic properties of tBLG in the (semi-)metallic phase as function of doping and twist angle. Specifically, we calculate quasiparticle properties, such as the band structure, density of states (DOS) and local density of states (LDOS), which are directly accessible in photoemission and tunnelling spectroscopy experiments. We find that quasiparticle properties change significantly upon doping - an effect which is not captured by tight-binding theory. In particular, we observe that the partially occupied bands flatten significantly which enhances the density of states at the Fermi level. We predict a clear signature of this band flattening in the LDOS in the AB/BA regions of tBLG which can be tested in scanning tunneling experiments. We also study the dependence of quasiparticle properties on the dielectric environment of tBLG and discover that these properties are surprisingly robust as a consequence of the strong internal screening. Finally, we present a simple analytical expression for the Hartree potential which enables the determination of quasiparticle properties without the need for self-consistent calculations.
Using terahertz time-domain spectroscopy, the real part of optical conductivity [$sigma_{1}(omega)$] of twisted bilayer graphene was obtained at different temperatures (10 -- 300 K) in the frequency range 0.3 -- 3 THz. On top of a Drude-like response, we see a strong peak in $sigma_{1} (omega)$ at $sim$2.7 THz. We analyze the overall Drude-like response using a disorder-dependent (unitary scattering) model, then attribute the peak at 2.7 THz to an enhanced density of states at that energy, that is caused by the presence of a van Hove singularity arising from a commensurate twisting of the two graphene layers.
We study the electronic properties of twisted bilayers graphene in the tight-binding approximation. The interlayer hopping amplitude is modeled by a function, which depends not only on the distance between two carbon atoms, but also on the positions of neighboring atoms as well. Using the Lanczos algorithm for the numerical evaluation of eigenvalues of large sparse matrices, we calculate the bilayer single-electron spectrum for commensurate twist angles in the range $1^{circ}lesssimthetalesssim30^{circ}$. We show that at certain angles $theta$ greater than $theta_{c}approx1.89^{circ}$ the electronic spectrum acquires a finite gap, whose value could be as large as $80$ meV. However, in an infinitely large and perfectly clean sample the gap as a function of $theta$ behaves non-monotonously, demonstrating exponentially-large jumps for very small variations of $theta$. This sensitivity to the angle makes it impossible to predict the gap value for a given sample, since in experiment $theta$ is always known with certain error. To establish the connection with experiments, we demonstrate that for a system of finite size $tilde L$ the gap becomes a smooth function of the twist angle. If the sample is infinite, but disorder is present, we expect that the electron mean-free path plays the same role as $tilde L$. In the regime of small angles $theta<theta_c$, the system is a metal with a well-defined Fermi surface which is reduced to Fermi points for some values of $theta$. The density of states in the metallic phase varies smoothly with $theta$.
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