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Register a new userA Koopmans-compliant screened exchange potential with correct asymptotic behavior for semiconductors
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The performance of density functional theory depends largely on the approximation applied for the exchange functional. We propose here a novel screened exchange potential for semiconductors, with parameters based on the physical properties of the underlying microscopic screening and obeying the requirements for proper asymptotic behavior. We demonstrate that this functional is Koopmans-compliant and reproduces a wide range of band gaps. We also show, that the only tunable parameter of the functional can be kept constant upon changing the cation or the anion isovalently, making the approach suitable for treating alloys.
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We present a screened exact-exchange (SXX) method for the efficient and accurate calculation of the optical properties of solids, where the screening is achieved through the zero-wavevector limit of the inverse dielectric function. The SXX approach can be viewed as a simplification of the Bethe-Salpeter equation (BSE) or, in the context of time-dependent density-functional theory, as a first step towards a new class of hybrid functionals for the optical properties of solids. SXX performs well for bound excitons and continuum spectra in both small-gap semiconductors and large-gap insulators, with a computational cost much lower than that of the BSE.
Obtaining a precise theoretical description of the spectral properties of liquid water poses challenges for both molecular dynamics (MD) and electronic structure methods. The lower computational cost of the Koopmans-compliant functionals with respect to Greens function methods allows the simulations of many MD trajectories, with a description close to the state-of-art quasi-particle self-consistent GW plus vertex corrections method (QSGW+f$_{xc}$). Thus, we explore water spectral properties when different MD approaches are used, ranging from classical MD to first-principles MD, and including nuclear quantum effects. We have observed that the different MD approaches lead to up to 1 eV change in the average band gap, thus, we focused on the band gap dependence with the geometrical properties of the system to explain such spread. We have evaluated the changes in the band gap due to variations in the intramolecular O-H bond distance, and HOH angle, as well as the intermolecular hydrogen bond O$cdotcdotcdot$O distance, and the OHO angles. We have observed that the dominant contribution comes from the O-H bond length; the O$cdotcdotcdot$O distance plays a secondary role, and the other geometrical properties do not significantly influence the gap. Furthermore, we analyze the electronic density of states (DOS), where the KIPZ functional shows a good agreement with the DOS obtained with state-of-art approaches employing quasi-particle self-consistent GW plus vertex corrections. The O-H bond length also significantly influences the DOS. When nuclear quantum effects are considered, a broadening of the peaks driven by the broader distribution of the O-H bond lengths is observed, leading to a closer agreement with the experimental photoemission spectra.
We present a comprehensive study of vacancy and vacancy-impurity complexes in InN combining positron annihilation spectroscopy and ab-initio calculations. Positron densities and annihilation characteristics of common vacancy-type defects are calculated using density functional theory and the feasibility of their experimental detection and distinction with positron annihilation methods is discussed. The computational results are compared to positron lifetime and conventional as well as coincidence Doppler broadening measurements of several representative InN samples. The particular dominant vacancy-type positron traps are identified and their characteristic positron lifetimes, Doppler ratio curves and lineshape parameters determined. We find that In vacancies and their complexes with N vacancies or impurities act as efficient positron traps, inducing distinct changes in the annihilation parameters compared to the InN lattice. Neutral or positively charged N vacancies and pure N vacancy complexes on the other hand do not trap positrons. The predominantly introduced positron trap in irradiated InN is identified as the isolated In vacancy, while in as-grown InN layers In vacancies do not occur isolated but complexed with one or more N vacancies. The number of N vacancies per In vacancy in these complexes is found to increase from the near surface region towards the layer-substrate interface.
In approximate Kohn-Sham density-functional theory, self-interaction manifests itself as the dependence of the energy of an orbital on its fractional occupation. This unphysical behavior translates into qualitative and quantitative errors that pervade many fundamental aspects of density-functional predictions. Here, we first examine self-interaction in terms of the discrepancy between total and partial electron removal energies, and then highlight the importance of imposing the generalized Koopmans condition -- that identifies orbital energies as opposite total electron removal energies -- to resolve this discrepancy. In the process, we derive a correction to approximate functionals that, in the frozen-orbital approximation, eliminates the unphysical occupation dependence of orbital energies up to the third order in the single-particle densities. This non-Koopmans correction brings physical meaning to single-particle energies; when applied to common local or semilocal density functionals it provides results that are in excellent agreement with experimental data -- with an accuracy comparable to that of GW many-body perturbation theory -- while providing an explicit total energy functional that preserves or improves on the description of established structural properties.
Koopmans-compliant (KC) functionals have been shown to provide accurate spectral properties through a generalized condition of piece-wise linearity of the total energy as a function of the fractional addition/removal of an electron to/from any orbital. We analyze the performance of different KC functionals on the GW100 test-set, comparing the ionization potentials (as opposite of the energy of the highest occupied orbital) of these 100 molecules to those obtained from CCSD(T) total energy differences, and experimental results, finding excellent agreement with a mean absolute error of 0.20 eV for the KIPZ functional, that is state-of-the-art for both DFT-based calculations and many-body perturbation theory. We highlight similarities and differences between KC functionals and other electronic-structure approaches, such as dielectric-dependent hybrid functionals and G$_0$W$_0$, both from a theoretical and from a practical point of view, arguing that Koopmans-compliant potentials can be considered as a local and orbital-dependent counterpart to the electronic GW self-energy, albeit already including approximate vertex corrections.
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