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Register a new userOrigin of the Anomalous Electronic Shot Noise in Atomic-Scale Junctions
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Fluctuations pose fundamental limitations in making sensitive measurements, yet at the same time, noise unravels properties that are inaccessible at the level of the averaged signal. In electronic devices, shot noise arises from the discrete nature of charge carriers and it increases linearly with the applied voltage according to the celebrated Schottky formula. Nonetheless, measurements of shot noise in atomic-scale junctions at high voltage reveal significant nonlinear (anomalous) behavior, which varies from sample to sample, and has no specific trend. Here, we provide a viable, unifying explanation for these diverse observations based on the theory of quantum coherent transport. Our formula for the anomalous shot noise relies on---and allows us to resolve---two key characteristics of a conducting junction: The structure of the transmission function at the vicinity of the Fermi energy and the asymmetry of the bias voltage drop at the contacts. We tested our theory on high voltage shot noise measurements on Au atomic scale junctions and demonstrated a quantitative agreement, recovering both the enhancement and suppression of shot noise as observed in different junctions. The good theory-experiment correspondence supports our modelling and emphasizes that the asymmetry of the bias drop on the contacts is a key factor in nanoscale electronic transport, which may substantially impact electronic signals even in incomplex structures.
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We study the behavior of shot noise in resonant tunneling junctions far from equilibrium. Quantum-coherent elastic charge transport can be characterized by a transmission function, that is the probability for an incoming electron at a given energy to tunnel through a potential barrier. In systems such as quantum point contacts, electronic shot noise is oftentimes calculated based on a constant (energy independent) transmission probability, a good approximation at low temperatures and under a small bias voltage. Here, we generalize these investigations to far from equilibrium settings by evaluating the contributions of electronic resonances to the electronic current noise. Our study extends canonical expressions for the voltage-activated shot noise and the recently discovered delta-T noise to the far from equilibrium regime, when a high bias voltage or a temperature difference is applied. In particular, when the Fermi energy is located on the shoulder of a broad resonance, we arrive at a formula for the shot noise revealing anomalous-nonlinear behavior at high bias voltage.
We report on a quantum form of electronic flicker noise in nanoscale conductors that contains valuable information on quantum transport. This noise is experimentally identified in atomic and molecular junctions, and theoretically analyzed by considering quantum interference due to fluctuating scatterers. Using conductance, shot noise, and flicker noise measurements, we show that the revealed quantum flicker noise uniquely depends on the distribution of transmission channels, a key characteristic of quantum conductors. This dependence opens the door for the application of flicker noise as a diagnostic probe for fundamental properties of quantum conductors and many-body quantum effects, a role that up to now has been performed by the experimentally less-accessible shot noise.
Current noise is measured with a SQUID in low impedance and transparent Nb-Al-Nb j unctions of length comparable to the phase breaking length and much longer than the thermal length. The shot noise amplitude is compared with theoretical predictions of doubled shot noise in diffusive normal/superconductor (NS) junctions due to the Andreev reflections. We discuss the heat dissipation away from the normal part through the NS interfaces. A weak applied magnetic field reduces the amplitude of the 1/f noise by a factor of two, showing that even far from equilibrium the sample is in the mesoscopic regime.
We have found experimentally that the noise of ballistic electron transport in a superconductor/semiconductor/superconductor junction is enhanced relative to the value given by the general relation, S_V=2eIR^2coth(eV/2kT), for two voltage regions in which this expression reduces to its thermal and shot noise limits. The noise enhancement is explained by the presence of large charge quanta, with effective charge q*=(1+2Delta/eV)e, that generate a noise spectrum S_V=2q*IR^2, as predicted in Phys. Rev. Lett. 76, 3814 (1996). These charge quanta result from multiple Andreev reflections at each junction interface, which are also responsible for the subharmonic gap structure observed in the voltage dependence of the junctions conductance.
The energy and charge fluxes carried by electrons in a two-terminal junction subjected to a random telegraph noise, produced by a single electronic defect, are analyzed. The telegraph processes are imitated by the action of a stochastic electric field that acts on the electrons in the junction. Upon averaging over all random events of the telegraph process, it is found that this electric field supplies, on the average, energy to the electronic reservoirs, which is distributed unequally between them: the stronger is the coupling of the reservoir with the junction, the more energy it gains. Thus the noisy environment can lead to a temperature gradient across an un-biased junction.
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