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Register a new userNonlinear Properties of Supercurrent-Carrying Single and Multi-Layer Thin-Film Superconductors
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Superconducting thin-films are central to the operation of many kinds of quantum sensors and quantum computing devices: Kinetic Inductance Detectors (KIDs), Travelling-Wave Parametric Amplifiers (TWPAs), Qubits, and Spin-based Quantum Memory elements. In all cases, the nonlinearity resulting from the supercurrent is a critical aspect of behaviour, either because it is central to the operation of the device (TWPA), or because it results in non-ideal second-order effects (KID). Here we present an analysis of supercurrent carrying superconducting thin-films that is based on the generalized Usadel equations. Our analysis framework is suitable for both homogeneous and multilayer thin-films, and can be used to calculate the resulting density of states, superconducting transition temperature, superconducting critical current, complex conductivities, complex surface impedances, transmission line propagation constants, and nonlinear kinetic inductances in the presence of supercurrent. Our analysis gives the scale of kinetic inductance nonlinearity (I*) for a given material combination and geometry, and is important in optimizing the design of detectors and amplifiers in terms of materials, geometries, and dimensions. To investigate the validity of our analysis across a wide range of supercurrent, we have measured the transition temperatures of superconducting thin-films as a function of DC supercurrent. These measurements show good agreement with our theoretical predictions in the experimentally relevant range of current values.
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Although nanoscale deformation, such as nanostrain in iron chalcogenide (FeSexTe1-x, FST) thin films, has attracted attention owing to the enhancement of general superconducting properties, including critical current density (Jc) and critical transition temperature, its formation has proven to be an extremely challenging and complex process thus far. Herein, we successfully fabricated an epitaxial FST thin film with uniformly distributed nanostrain by injection of a trace amount of CeO2 inside FST matrix using sequential pulsed laser deposition. Using transmission electron microscopy and geometrical phase analysis, we verified that a trace amount of CeO2 injection forms nanoscale fine defects with a nanostrained region, which has a tensile strain (ezz ~ 0.02) along the c-axis of the FST matrix. The nanostrained FST thin film achieves a remarkable Jc of 3.5 MA/cm2 for a self-field at 6 K and a highly enhanced Jc under the entire magnetic field with respect to a pristine FST thin film.
For any practical superconductor the magnitude of the critical current density, $J_textrm{c}$, is crucially important. It sets the upper limit for current in the conductor. Usually $J_textrm{c}$ falls rapidly with increasing external magnetic field but even in zero external field the current flowing in the conductor generates a self-field which limits $J_textrm{c}$. Here we show for thin films of thickness less than the London penetration depth, $lambda$, this limiting $J_textrm{c}$ adopts a universal value for all superconductors - metals, oxides, cuprates, pnictides, borocarbides and heavy Fermions. For type I superconductors, it is $H_{textrm{c}}/lambda$ where $H_textrm{c}$ is the thermodynamic critical field. But surprisingly for type II superconductors we find the self-field $J_textrm{c}$ is $H_{textrm{c}1}/lambda$ where $H_{textrm{c}1}$ is the lower critical field. $J_textrm{c}$ is thus fundamentally determined and this provides a simple means to extract absolute values of $lambda(T)$ and, from its temperature dependence, the symmetry and magnitude of the superconducting gap.
Single-layer FeSe films with extremely expanded in-plane lattice constant of 3.99A are fabricated by epitaxially growing FeSe/Nb:SrTiO3/KTaO3 heterostructures, and studied by in situ angle-resolved photoemission spectroscopy. Two elliptical electron pockets at the Brillion zone corner are resolved with negligible hybridization between them, indicating the symmetry of the low energy electronic structure remains intact as a free-standing single-layer FeSe, although it is on a substrate. The superconducting gap closes at a record high temperature of 70K for the iron based superconductors. Intriguingly, the superconducting gap distribution is anisotropic but nodeless around the electron pockets, with minima at the crossings of the two pockets. Our results put strong constraints on the current theories, and support the coexistence of both even and odd parity spin-singlet pairing channels as classified by the lattice symmetry.
We measure the Shubnikov-de Haas effect in thin-film Sr$_2$RuO$_4$ grown on an (LaAlO$_3$)$_{0.29}$-(SrAl$_{1/2}$Ta$_{1/2}$O$_3$)$_{0.71}$ (LSAT) substrate. We detect all three known Fermi surfaces and extract the Fermi surface volumes, cyclotron effective masses, and quantum lifetimes. We show that the electronic structure is nearly identical to that of single-crystal Sr$_2$RuO$_4$, and that the quasiparticle lifetime is consistent with the Tc of comparably clean, single-crystal Sr$_2$RuO$_4$. Unlike single-crystal Sr$_2$RuO$_4$, where the quantum and transport lifetimes are roughly equal, we find that the transport lifetime is $1.3pm0.1$ times longer than the quantum lifetime. This suggests that extended (rather than point) defects may be the dominant source of quasiparticle scattering in these films. To test this idea, we perform cross-sectional STEM and find that out-of-phase boundaries extending the entire thickness of the film occur with a density that is consistent with the quantum mean free path. The long quasiparticle lifetimes make these films ideal for studying the unconventional superconducting state in Sr$_2$RuO$_4$ through the fabrication of devices -- such as planar tunnel junctions and SQUIDs.
We report on the layer-by-layer growth of single-crystal Al2O3 thin-films on Nb (110). Single-crystal Nb films are first prepared on A-plane sapphire, followed by the evaporation of Al in an O2 background. The first stages of Al2O3 growth are layer-by-layer with hexagonal symmetry. Electron and x-ray diffraction measurements indicate the Al2O3 initially grows clamped to the Nb lattice with a tensile strain near 10%. This strain relaxes with further deposition, and beyond about 5 nm we observe the onset of island growth. Despite the asymmetric misfit between the Al2O3 film and the Nb under-layer, the observed strain is surprisingly isotropic.
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