Recently, hole-doped superconducting cuprates with the T-structure La1.8-xEu0.2SrxCuO4 (LESCO) have attracted a lot of attention. We have performed x-ray photoemission and absorption spectroscopy measurements on as-grown and reduced T0-LESCO. Results show that electrons and holes were doped by reduction annealing and Sr substitution, respectively. However, it is shown that the system remains on the electron-doped side of the Mott insulator or that the charge-transfer gap is collapsed in the parent compound.
The electronic structure of the magnetic semiconductor Ga$_{1-x}$Cr$_{x}$N and the effect of Si doping on it have been investigated by photoemission and soft x-ray absorption spectroscopy. We have confirmed that Cr in GaN is predominantly trivalent substituting for Ga, and that Cr 3$d$ states appear within the band gap of GaN just above the N 2$p$-derived valence-band maximum. As a result of Si doping, downward shifts of the core levels (except for Cr 2$p$) and the formation of new states near the Fermi level were observed, which we attribute to the upward chemical potential shift and the formation of a small amount of Cr$^{2+}$ species caused by the electron doping. Possibility of Cr-rich cluster growth by Si doping are discussed based on the spectroscopic and magnetization data.
In order to realize superconductivity in cuprates with the T-type structure, not only chemical substitution (Ce doping) but also post-growth reduction annealing is necessary. In the case of thin films, however, well-designed reduction annealing alone without Ce doping can induce superconductivity in the T-type cuprates. In order to unveil the origin of superconductivity in the Ce-undoped T-type cuprates, we have performed bulk-sensitive hard x-ray photoemission and soft x-ray absorption spectroscopies on superconducting and non-superconducting Nd$_{2-x}$Ce$_x$CuO$_4$ ($x=$ 0, 0.15, and 0.19) thin films. By post-growth annealing, core-level spectra exhibited dramatic changes, which we attributed to the enhancement of core-hole screening in the CuO$_2$ plane and the shift of chemical potential along with changes in the band filling. The result suggests that the superconducting Nd$_2$CuO$_4$ film is doped with electrons and that the electronic states are similar to those of Ce-doped superconductors.
The total spectral weight textit{S} of the emergent low-energy quasipaticles in high-temperature superconductors is explored by x-ray absorption spectroscopy. In order to examine the applicability of the Hubbard model, regimes that cover from zero doping to overdoping are investigated. In contrast to mean field theory, we found that textit{S} deviates from linear dependence on the doping level textit{p}. The slope of textit{S} versus textit{p} changes continuously throughout the whole doping range with no sign of saturation up to textit{p} = 0.23. Therefore, the picture of Zhang-Rice singlet remains intact within the most prominent doping regimes of HTSCs.
We have investigated the electronic structures of recently discovered superconductor FeSe by soft-x-ray and hard-x-ray photoemission spectroscopy with high bulk sensitivity. The large Fe 3d spectral weight is located in the vicinity of the Fermi level (EF), which is demonstrated to be a coherent quasi-particle peak. Compared with the results of the band structure calculation with local-density approximation, Fe 3d band narrowing and the energy shift of the band toward EF are found, suggesting an importance of the electron correlation effect in FeSe. The self energy correction provides the larger mass enhancement value (Z^-1=3.6) than in Fe-As superconductors and enables us to separate a incoherent part from the spectrum. These features are quite consistent with the results of recent dynamical mean-field calculations, in which the incoherent part is attributed to the lower Hubbard band.
We have performed high-resolution angle-resolved photoemission spectroscopy on the optimally-doped Ba$_{0.6}$K$_{0.4}$Fe$_2$As$_2$ compound and determined the accurate momentum dependence of the superconducting (SC) gap in four Fermi-surface sheets including a newly discovered outer electron pocket at the M point. The SC gap on this pocket is nearly isotropic and its magnitude is comparable ($Delta$ $sim$ 11 meV) to that of the inner electron and hole pockets ($sim$12 meV), although it is substantially larger than that of the outer hole pocket ($sim$6 meV). The Fermi-surface dependence of the SC gap value is basically consistent with $Delta$($k$) = $Delta$$_0$cos$k_x$cos$k_y$ formula expected for the extended s-wave symmetry. The observed finite deviation from the simple formula suggests the importance of multi-orbital effects.
Chun Lin
,Masafumi Horio
,Takayuki Kawamata
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(2019)
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"Nature of carrier doping in T-La1.8-xEu0.2SrxCuO4 studied by X-Ray Photoemission and Absorption Spectroscopy"
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Chun Lin
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