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Register a new userVisualizing 1D zigzag Wigner crystallization at domain walls in the Mott insulator TaS$_2$
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In a certain regime of low carrier densities and strong correlations, electrons can crystallize into a periodic arrangement of charge known as Wigner crystal. Such phases are particularly interesting in one dimension (1D) as they display a variety of charge and spin ground states which may be harnessed in quantum devices as high-fidelity transmitters of spin information. Recent theoretical studies suggest that the strong Coulomb interactions in Mott insulators and other flat band systems, may provide an attractive higher temperature platform for Wigner crystallization, but due to materials and device constraints experimental realization has proven difficult. In this work we use scanning tunneling microscopy at liquid helium temperatures to directly image the formation of a 1D Wigner crystal in a Mott insulator, TaS$_2$. Charge density wave domain walls in TaS$_2$ create band bending and provide ideal conditions of low densities and strong interactions in 1D. STM spectroscopic maps show that once the lower Hubbard band crosses the Fermi energy, the charges rearrange to minimize Coulomb energy, forming zigzag patterns expected for a 1D Wigner crystal. The zigzag charge patterns show characteristic noise signatures signifying charge or spin fluctuations induced by the tunneling electrons, which is expected for this more fragile condensed state. The observation of a Wigner crystal at orders of magnitude higher temperatures enabled by the large Coulomb energy scales combined with the low density of electrons, makes TaS$_2$ a promising system for exploiting the charge and spin order in 1D Wigner crystals.
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1T-TaS$_2$ is a charge-density-wave (CDW) compound with a Mott-insulating ground state. The metallic state obtained by doping, substitution or pulsed charge injection is characterized by an emergent CDW domain wall network, while single domain walls can be found in the pristine Mott state. Here we study whether and how the single walls become metallic. Tunneling spectroscopy reveals partial suppression of the Mott gap and the presence of in-gap states strongly localized at the domain-wall sites. Using the real-space dynamical mean field theory description of the strongly correlated quantum-paramagnet ground state we show that the local gap suppression follows from the increased hopping along the connected zig-zag chain of lattice sites forming the domain wall, and that full metallisation is preempted by the splitting of the quasiparticle band into bonding and antibonding sub-bands due to the structural dimerization of the wall, explaining the presence of the in-gap states and the low density of states at the Fermi level.
1T-TaS$_2$ undergoes successive phase transitions upon cooling and eventually enters an insulating state of mysterious origin. Some consider this state to be a band insulator with interlayer stacking order, yet others attribute it to Mott physics that support a quantum spin liquid state.Here, we determine the electronic and structural properties of 1T-TaS$_2$ using angle-resolved photoemission spectroscopy and X-Ray diffraction. At low temperatures, the 2$pi$/2c-periodic band dispersion, along with half-integer-indexed diffraction peaks along the c axis, unambiguously indicates that the ground state of 1T-TaS$_2$ is a band insulator with interlayer dimerization. Upon heating, however, the system undergoes a transition into a Mott insulating state, which only exists in a narrow temperature window. Our results refute the idea of searching for quantum magnetism in 1T-TaS$_2$ only at low temperatures, and highlight the competition between on-site Coulomb repulsion and interlayer hopping as a crucial aspect for understanding the materials electronic properties.
We devise a model to explain why twisted bi-layer graphene (TBLG) exhibits insulating behavior when $ u=2,3$ charges occupy a unit moire cell, a feature attributed to Mottness, but not for $ u=1$, clearly inconsistent with Mott insulation. We compute $r_s=E_U/E_K$, where $E_U$ and $E_K$ are the potential and kinetic energies, respectively, and show that (i) the Mott criterion lies at a density $10^4$ higher than in the experiments and (ii) a transition to a series of Wigner crystalline states exists as a function of $ u$. We find, for $ u=1$, $r_s$ fails to cross the threshold ($r_s = 37$) for the triangular lattice and metallic transport ensues. However, for $ u=2$ and $ u=3$, the thresholds, $r_s=22$, and $r_s=17$, respectively are satisfied for a transition to Wigner crystals (WCs) with a honeycomb ($ u=2$) and kagome ($ u=3$) structure. We believe, such crystalline states form the correct starting point for analyzing superconductivity.
We investigate the low-temperature charge-density-wave (CDW) state of bulk TaS$_2$ with a fully self-consistent DFT+U approach, over which the controversy has remained unresolved regarding the out-of-plane metallic band. By examining the innate structure of the Hubbard U potential, we reveal that the conventional use of atomic-orbital basis could seriously misevaluate the electron correlation in the CDW state. By adopting a generalized basis, covering the whole David star, we successfully reproduce the Mott insulating nature with the layer-by-layer antiferromagnetic order. Similar consideration should be applied for description of the electron correlation in molecular solid.
A magnetic helix arises in chiral magnets with a wavelength set by the spin-orbit coupling. We show that the helimagnetic order is a nanoscale analog to liquid crystals, exhibiting topological structures and domain walls that are distinctly different from classical magnets. Using magnetic force microscopy and micromagnetic simulations, we demonstrate that - similar to cholesteric liquid crystals - three fundamental types of domain walls are realized in the helimagnet FeGe. We reveal the micromagnetic wall structure and show that they can carry a finite skyrmion charge, permitting coupling to spin currents and contributions to a topological Hall effect. Our study establishes a new class of magnetic nano-objects with non-trivial topology, opening the door to innovative device concepts based on helimagnetic domain walls.
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