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Diamond photonics is an ever growing field of research driven by the prospects of harnessing diamond and its colour centres as suitable hardware for solid-state quantum applications. The last two decades have seen the field been shaped by the nitrogen-vacancy (NV) centre both with breakthrough fundamental physics demonstrations and practical realizations. Recently however, an entire suite of other diamond defects has emerged. They are M V colour centres, where M indicates one of the elements in the IV column of the periodic table Si, Ge, Sn and Pb, and V indicates lattice vacancies, i.e. missing next-neighbour carbon atoms. These centres exhibit a much stronger emission into the zero phonon line then the NV centre, they display inversion symmetry, and can be engineered using ion implantation all attractive features for scalable quantum photonic architectures based on solid-state, single-photon sources. In this perspective, we highlight the leading techniques for engineering and characterizing these diamond defects, discuss the current state-of-the-art of group IV-based devices and provide an outlook of the future directions the field is taking towards the realisation of solid-state quantum photonics with diamond.
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The field of 2D materials-based nanophotonics has been growing at a rapid pace, triggered by the ability to design nanophotonic systems with in situ control, unprecedented degrees of freedom, and to build material heterostructures from bottom up with atomic precision. A wide palette of polaritonic classes have been identified, comprising ultra confined optical fields, even approaching characteristic length scales of a single atom. These advances have been a real boost for the emerging field of quantum nanophotonics, where the quantum mechanical nature of the electrons and-or polaritons and their interactions become relevant. Examples include, quantum nonlocal effects, ultrastrong light matter interactions, Cherenkov radiation, access to forbidden transitions, hydrodynamic effects, single plasmon nonlinearities, polaritonic quantization, topological effects etc. In addition to these intrinsic quantum nanophotonic phenomena, the 2D material system can also be used as a sensitive probe for the quantum properties of the material that carries the nanophotonics modes, or quantum materials in its vicinity. Here, polaritons act as a probe for otherwise invisible excitations, e.g. in superconductors, or as a new tool to monitor the existence of Berry curvature in topological materials and superlattice effects in twisted 2D materials.
In this chapter, we present the state-of-the-art in the generation of nonclassical states of light using semiconductor cavity quantum electrodynamics (QED) platforms. Our focus is on the photon blockade effects that enable the generation of indistinguishable photon streams with high purity and efficiency. Starting with the leading platform of InGaAs quantum dots in optical nanocavities, we review the physics of a single quantum emitter strongly coupled to a cavity. Furthermore, we propose a complete model for photon blockade and tunneling in III-V quantum dot cavity QED systems. Turning toward quantum emitters with small inhomogeneous broadening, we propose a direction for novel experiments for nonclassical light generation based on group-IV color-center systems. We present a model of a multi-emitter cavity QED platform, which features richer dressed-states ladder structures, and show how it can offer opportunities for studying new regimes of high-quality photon blockade.
Two-dimensional transition metal dichalcogenides (TMDCs) have recently become attractive semiconductor materials for several optoelectronic applications, such as photodetection, light harvesting, phototransistors, light-emitting diodes, and lasers. They are particularly appealing because their bandgap lies in the visible and near-IR range, and they possess strong excitonic resonances, high oscillator strengths, and valley-selective response. Coupling these materials to optical nanocavities enhances the quantum yield of exciton emission, enabling advanced quantum optics and nanophotonic devices. Here, we review state-of-the-art advances on hybrid exciton-polariton structures based on monolayer TMDCs coupled to plasmonic and dielectric nanocavities. We first generally discuss the optical properties of 2D WS2, WSe2, MoS2 and MoSe2 materials, paying special attention to their energy and photoluminescence/absorption spectra, excitonic fine structure, and to the dynamics of exciton formation and valley depolarization. We then discuss light-matter interactions in hybrid exciton-polariton structures. Finally, we focus on weak and strong coupling regimes in monolayer TMDCs-based exciton-polariton systems, envisioning research directions and future opportunities based on this novel material platform.
Group-IV color centers in diamond have attracted significant attention as solid-state spin qubits because of their excellent optical and spin properties. Among these color centers, the tin-vacancy (SnV$^{,textrm{-}}$) center is of particular interest because its large ground-state splitting enables long spin coherence times at temperatures above 1$,$K. However, color centers typically suffer from inhomogeneous broadening, which can be exacerbated by nanofabrication-induced strain, hindering the implementation of quantum nodes emitting indistinguishable photons. Although strain and Raman tuning have been investigated as promising techniques to overcome the spectral mismatch between distinct group-IV color centers, other approaches need to be explored to find methods that can offer more localized control without sacrificing emission intensity. Here, we study electrical tuning of SnV$^{,textrm{-}}$ centers in diamond via the direct-current Stark effect. We demonstrate a tuning range beyond 1.7$,$GHz. We observe both quadratic and linear dependence on the applied electric field. We also confirm that the tuning effect we observe is a result of the applied electric field and is distinct from thermal tuning due to Joule heating. Stark tuning is a promising avenue toward overcoming detunings between emitters and enabling the realization of multiple identical quantum nodes.
Atomic-size spin defects in solids are unique quantum systems. Most applications require nanometer positioning accuracy, which is typically achieved by low energy ion implantation. So far, a drawback of this technique is the significant residual implantation-induced damage to the lattice, which strongly degrades the performance of spins in quantum applications. In this letter we show that the charge state of implantation-induced defects drastically influences the formation of lattice defects during thermal annealing. We demonstrate that charging of vacancies localized at e.g. individual nitrogen implantation sites suppresses the formation of vacancy complexes, resulting in a tenfold-improved spin coherence time of single nitrogen-vacancy (NV) centers in diamond. This has been achieved by confining implantation defects into the space charge layer of free carriers generated by a nanometer-thin boron-doped diamond structure. Besides, a twofold-improved yield of formation of NV centers is observed. By combining these results with numerical calculations, we arrive at a quantitative understanding of the formation and dynamics of the implanted spin defects. The presented results pave the way for improved engineering of diamond spin defect quantum devices and other solid-state quantum systems.
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