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Register a new userElectronic band structure and pinning of Fermi energy to van Hove singularities in twisted bilayer graphene: a self consistent approach
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The emergence of flat bands in twisted bilayer graphene leads to an enhancement of interaction effects, and thus to insulating and superconducting phases at low temperatures, even though the exact mechanism is still widely debated. The position and splitting of the flat bands is also very sensitive to the residual interactions. Moreover, the low energy bands of twisted graphene bilayers show a rich structure of singularities in the density of states, van Hove singularities, which can enhance further the role of interactions. We study the effect of the long-range interactions on the band structure and the van Hove singularities of the low energy bands of twisted graphene bilayers. Reasonable values of the long-range electrostatic interaction lead to a band dispersion with a significant dependence on the filling. The change of the shape and position of the bands with electronic filling implies that the van Hove singularities remain close to the Fermi energy for a broad range of fillings. This result can be described as an effective pinning of the Fermi energy at the singularity. The sensitivity of the band structure to screening by the environment may open new ways of manipulating the system.
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The possibility of triggering correlated phenomena by placing a singularity of the density of states near the Fermi energy remains an intriguing avenue towards engineering the properties of quantum materials. Twisted bilayer graphene is a key material in this regard because the superlattice produced by the rotated graphene layers introduces a van Hove singularity and flat bands near the Fermi energy that cause the emergence of numerous correlated phases, including superconductivity. While the twist angle-dependence of these properties has been explored, direct demonstration of electrostatic control of the superlattice bands over a wide energy range has, so far, been critically missing. This work examines a functional twisted bilayer graphene device using in-operando angle-resolved photoemission with a nano-focused light spot. A twist angle of 12.2$^{circ}$ is selected such that the superlattice Brillouin zone is sufficiently large to enable identification of van Hove singularities and flat band segments in momentum space. The doping dependence of these features is extracted over an energy range of 0.4 eV, expanding the combinations of twist angle and doping where they can be placed at the Fermi energy and thereby induce new correlated electronic phases in twisted bilayer graphene.
Extensive scanning tunnelling microscopy and spectroscopy experiments complemented by first principles and parameterized tight binding calculations provide a clear answer to the existence, origin and robustness of van Hove singularities (vHs) in twisted graphene layers. Our results are conclusive: vHs due to interlayer coupling are ubiquitously present in a broad range (from 1{deg} to 10{deg}) of rotation angles in our graphene on 6H-SiC(000-1) samples. From the variation of the energy separation of the vHs with rotation angle we are able to recover the Fermi velocity of a graphene monolayer as well as the strength of the interlayer interaction. The robustness of the vHs is assessed both by experiments, which show that they survive in the presence of a third graphene layer, and calculations, which test the role of the periodic modulation and absolute value of the interlayer distance. Finally, we clarify the origin of the related moire corrugation detected in the STM images.
Electronic instabilities at the crossing of the Fermi energy with a Van Hove singularity in the density of states often lead to new phases of matter such as superconductivity, magnetism or density waves. However, in most materials this condition is difficult to control. In the case of single-layer graphene, the singularity is too far from the Fermi energy and hence difficult to reach with standard doping and gating techniques. Here we report the observation of low-energy Van Hove singularities in twisted graphene layers seen as two pronounced peaks in the density of states measured by scanning tunneling spectroscopy. We demonstrate that a rotation between stacked graphene layers can generate Van Hove singularities, which can be brought arbitrarily close to the Fermi energy by varying the angle of rotation. This opens intriguing prospects for Van Hove singularity engineering of electronic phases.
Understanding and tuning correlated states is of great interest and significance to modern condensed matter physics. The recent discovery of unconventional superconductivity and Mott-like insulating states in magic-angle twisted bilayer graphene (tBLG) presents a unique platform to study correlation phenomena, in which the Coulomb energy dominates over the quenched kinetic energy as a result of hybridized flat bands. Extending this approach to the case of twisted multilayer graphene would allow even higher control over the band structure because of the reduced symmetry of the system. Here, we study electronic transport properties in twisted trilayer graphene (tTLG, bilayer on top of monolayer graphene heterostructure). We observed the formation of van Hove singularities which are highly tunable by twist angle and displacement field and can cause strong correlation effects under optimum conditions, including superconducting states. We provide basic theoretical interpretation of the observed electronic structure.
The low-energy electronic structure of the itinerant metamagnet Sr3Ru2O7 is investigated by angle resolved photoemission and density functional calculations. We find well-defined quasiparticle bands with resolution limited line widths and Fermi velocities up to an order of magnitude lower than in single layer Sr2RuO4. The complete topography, the cyclotron masses and the orbital character of the Fermi surface are determined, in agreement with bulk sensitive de Haas - van Alphen measurements. An analysis of the dxy band dispersion reveals a complex density of states including van Hove singularities (vHs) near the Fermi level; a situation which is favorable for magnetic instabilities.
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