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Register a new userVortex dynamic, pinning and irreversibility field investigation in EuRbFe4As4 superconductor
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Added by
Vladimir Vlasenko A.
Publication date
2019
fields
Physics
and research's language is
English
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We performed systematic AC susceptibility and magnetic moment measurements to investigate the vortex dynamics and pinning in the $EuRbFe_4As_4$ single crystal as a function of temperature, frequency, and DC magnetic field. The vortex solid-liquid line was determined and it fits well with $H(T_p)=H_0(1-t_p)^beta$ using $beta$=1.74-1.91, for $Hparallel ab$. It indicates a rather high pinning strength of the vortex system. The activation energy $U_0$ was determined from thermally activated flux creep theory and reached 6700 K at low fields, suggesting strong vortex pinning. A field dependence of $U_0(Hparallel ab)sim H^a$ with $a=0.47$ suggests thermally activated plastic pinning or caused by planar defects. Magnetic moment measurements also confirmed strong pinning in a $EuRbFe_4As_4$ superconductor and the superconducting response gives the main contribution to the $M(H)$ hysteresis. Additionally, we found evidence of long-range magnetic interactions in $Eu^{2+}$ sublattice and the FM-like nature of $Eu^{2+}$ atoms ordering.
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We report the synthesis and variation of superconductivity parameters such as transition temperature Tc, upper critical field Hc, critical current density Jc, irreversibility field Hirr and flux pinning parameter (Fp) for the MgB2-xCx system with nano-Carbon doping up to x=0.20. Carbon substitutes successfully on boron site and results in significant enhancement of Hirr and Jc(H). Resistivity measurements reveal a continuous decrease in Tc under zero applied field, while the same improves remarkably at higher fields with an increase in nano-C content for MgB2-xCx system. The irreversibility field value (Hirr) is 7.6 & 6.6 Tesla at 5 and 10K respectively for the pristine sample, which is enhanced to 13.4 and 11.0 Tesla for x = .08 sample at same temperatures. Compared to undoped sample, critical current density (Jc) for the x=0.08 nano-Carbon doped sample is increased by a factor of 24 at 10K at 6 Tesla field.
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