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Register a new userTwo-dimensional topological materials discovery by symmetry-indicator method
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Two-dimensional (2D) topological materials (TMs) have attracted tremendous attention due to the promise of revolutionary devices with non-dissipative electric or spin currents. Unfortunately, the scarcity of 2D TMs holds back the experimental realization of such devices. In this work, based on our recently developed, highly efficient TM discovery algorithm using symmetry indicators, we explore the possible 2D TMs in all non-magnetic compounds in four recently proposed materials databases for possible 2D materials. We identify hundreds of 2D TM candidates, including 205 topological (crystalline) insulators and 299 topological semimetals. In particular, we highlight MoS, with a mirror Chern number of -4, as a possible experimental platform for studying the interaction-induced modification to the topological classification of materials. Our results winnow out the topologically interesting 2D materials from these databases and provide a TM gene pool which for further experimental studies.
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Crystalline symmetries play an important role in the classification of band structures, and the rich variety of spatial symmetries in solids leads to various topological crystalline phases (TCPs). However, compared with topological insulators and Dirac/Weyl semimetals, relatively few realistic materials candidates have been proposed for TCPs. Based on our recently developed method for the efficient discovery of topological materials using symmetry indicators, we explore topological materials in five space groups (i.e. SGs87,140,221,191,194), which are indexed by large order strong symmetry based indicators (Z8 and Z12) allowing for the realization of several kinds of gapless boundary states in a single compound. We predict many TCPs, and the representative materials include: Pt3Ge(SG140), graphite(SG194), XPt3 (SG221,X=Sn,Pb), Au4Ti (SG87) and Ti2Sn (SG194). As by-products, we also find that AgXF3 (SG140,X=Rb,Cs) and AgAsX (SG194,X=Sr,Ba) are good Dirac semimetals with clean Fermi surface. The proposed materials provide a good platform to study the novel properties emerging from the interplay between different types of boundary states.
Although the richness of spatial symmetries has led to a rapidly expanding inventory of possible topological crystalline (TC) phases of electrons, physical realizations have been slow to materialize due to the practical difficulty to ascertaining band topology in realistic calculations. Here, we integrate the recently established theory of symmetry indicators of band topology into first-principle band-structure calculations, and test it on a databases of previously synthesized crystals. The combined algorithm is found to efficiently unearth topological materials and predict topological properties like protected surface states. On applying our algorithm to just 8 out of the 230 space groups, we already discover numerous materials candidates displaying a diversity of topological phenomena, which are simultaneously captured in a single sweep. The list includes recently proposed classes of TC insulators that had no previous materials realization as well as other topological phases, including: (i) a screw-protected 3D TC insulator, b{eta}-MoTe2, with gapped surfaces except for 1D helical hinge states; (ii) a rotation-protected TC insulator BiBr with coexisting surface Dirac cones and hinge states; (iii) non-centrosymmetric Z2 topological insulators undetectable using the well-established parity criterion, AgXO (X=Na,K,Rb); (iv) a Dirac semimetal MgBi2O6; (v) a Dirac nodal-line semimetal AgF2; and (vi) a metal with three-fold degenerate band crossing near the Fermi energy, AuLiMgSn. Our work showcases how the recent theoretical insights on the fundamentals of band structures can aid in the practical goal of discovering new topological materials.
We derive electronic tight-binding Hamiltonians for strained graphene, hexagonal boron nitride and transition metal dichalcogenides based on Wannier transformation of {it ab initio} density functional theory calculations. Our microscopic models include strain effects to leading order that respect the hexagonal crystal symmetry and local crystal configuration, and are beyond the central force approximation which assumes only pair-wise distance dependence. Based on these models, we also derive and analyze the effective low-energy Hamiltonians. Our {it ab initio} approaches complement the symmetry group representation construction for such effective low-energy Hamiltonians and provide the values of the coefficients for each symmetry-allowed term. These models are relevant for the design of electronic device applications, since they provide the framework for describing the coupling of electrons to other degrees of freedom including phonons, spin and the electromagnetic field. The models can also serve as the basis for exploring the physics of many-body systems of interesting quantum phases.
We review theoretical and experimental highlights in transport in two-dimensional materials focussing on key developments over the last five years. Topological insulators are finding applications in magnetic devices, while Hall transport in doped samples and the general issue of topological protection remain controversial. In transition metal dichalcogenides valley-dependent electrical and optical phenomena continue to stimulate state-of-the-art experiments. In Weyl semimetals the properties of Fermi arcs are being actively investigated. A new field, expected to grow in the near future, focuses on the non-linear electrical and optical responses of topological materials, where fundamental questions are once more being asked about the intertwining roles of the Berry curvature and disorder scattering. In topological superconductors the quest for chiral superconductivity, Majorana fermions and topological quantum computing is continuing apace.
We demonstrate how hybridization between a two-dimensional material and its substrate can lead to an apparent heavy doping, using the example of monolayer TaS$_2$ grown on Au(111). Combining $textit{ab-initio}$ calculations, scanning tunneling spectroscopy experiments and a generic model, we show that strong changes in Fermi areas can arise with much smaller actual charge transfer. This mechanism, which we refer to as pseudodoping, is a generic effect for metallic two-dimensional materials which are either adsorbed to metallic substrates or embedded in vertical heterostructures. It explains the apparent heavy doping of TaS$_2$ on Au(111) observed in photoemission spectroscopy and spectroscopic signatures in scanning tunneling spectroscopy. Pseudodoping is associated with non-linear energy-dependent shifts of electronic spectra, which our scanning tunneling spectroscopy experiments reveal for clean and defective TaS$_2$ monolayer on Au(111). The influence of pseudodoping on the formation of charge ordered, magnetic, or superconducting states is analyzed.
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