No Arabic abstract
The prediction of ultra-low magnetic damping in Co 2 MnZ Heusler half-metal thin-film magnets is explored in this study and the damping response is shown to be linked to the underlying electronic properties. By substituting the Z elements in high crystalline quality films (Co 2 MnZ with Z=Si, Ge, Sn, Al, Ga, Sb), electronic properties such as the minority spin band gap, Fermi energy position in the gap and spin polarization can be tuned and the consequence on magnetization dynamics analyzed. The experimental results allow us to directly explore the interplay of spin polarization, spin gap, Fermi energy position and the magnetic damping obtained in these films, together with ab initio calculation predictions. The ultra-low magnetic damping coefficients measured in the range 4.1 10-4-9 10-4 for Co 2 MnSi, Ge, Sn, Sb are the lowest values obtained on a conductive layer and offers a clear experimental demonstration of theoretical predictions on Half-Metal Magnetic Heusler compounds and a pathway for future materials design.
X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) were used to probe the oxidation state and element specific magnetic moments of Mn in Heusler compounds with different crystallographic structure. The results were compared with theoretical calculations, and it was found that in full Heusler alloys, Mn is metallic (oxidation state near 0) on both sublattices. The magnetic moment is large and localized when octahedrally coordinated by the main group element, consistent with previous theoretical work, and reduced when the main group coordination is tetrahedral. By contrast, in the half Heusler compounds the magnetic moment of the Mn atoms is large and the oxidation state is +1 or +2. The magnetic and electronic properties of Mn in full and half Heusler compounds are strongly dependent on the structure and sublattice, a fact that can be exploited to design new materials.
The local atomic environments and magnetic properties were investigated for a series of Co(1+x)Fe(2-x)Si (0<x<1) Heusler compounds. While the total magnetic moment in these compounds increases with the number of valance electrons, the highest Curie temperature (Tc) in this series was found for Co1.5Fe1.5Si, with a Tc of 1069 K (24 K higher than the well known Co2FeSi). 57Fe Mossbauer spectroscopy was used to characterize the local atomic order and to estimate the Co and Fe magnetic moments. Consideration of the local magnetic moments and the exchange integrals is necessary to understand the trend in Tc.
The static and dynamic magnetic properties of tetragonally distorted Mn--Ga based alloys were investigated. Static properties are determined in magnetic fields up to 6.5~T using SQUID magnetometry. For the pure Mn$_{1.6}$Ga film, the saturation magnetisation is 0.36~MA/m and the coercivity is 0.29~T. Partial substitution of Mn by Co results in Mn$_{2.6}$Co$_{0.3}$Ga$_{1.1}$. The saturation magnetisation of those films drops to 0.2~MA/m and the coercivity is increased to 1~T. Time-resolved magneto-optical Kerr effect (TR-MOKE) is used to probe the high-frequency dynamics of Mn--Ga. The ferromagnetic resonance frequency extrapolated to zero-field is found to be 125~GHz with a Gilbert damping, $alpha$, of 0.019. The anisotropy field is determined from both SQUID and TR-MOKE to be 4.5~T, corresponding to an effective anisotropy density of 0.81~MJ/m$^3$. Given the large anisotropy field of the Mn$_{2.6}$Co$_{0.3}$Ga$_{1.1}$ film, pulsed magnetic fields up to 60~T are used to determine the field strength required to saturate the film in the plane. For this, the extraordinary Hall effect was employed as a probe of the local magnetisation. By integrating the reconstructed in--plane magnetisation curve, the effective anisotropy energy density for Mn$_{2.6}$Co$_{0.3}$Ga$_{1.1}$ is determined to be 1.23~MJ/m$^3$.
Ferromagnetic resonance (FMR) technique has been used to study the magnetization relaxation processes and magnetic anisotropy in two different series of the Co2FeSi (CFS) Heusler alloy thin films, deposited on the Si(111) substrate by UHV sputtering. While the CFS films of fixed (50 nm) thickness, deposited at different substrate temperatures (TS) ranging from room temperature (RT) to 600^C, constitute the series-I, the CFS films with thickness t varying from 12 nm to 100 nm and deposited at 550^C make up the series-II. In series-I, the CFS films deposited at TS = RT and 200^C are completely amorphous, the one at TS = 300^C is partially crystalline, and those at TS equal 450^C, 550^C and 600^C are completely crystalline with B2 order. By contrast, all the CFS films in series-II are in the fully-developed B2 crystalline state. Irrespective of the strength of disorder and film thickness, angular variation of the resonance field in the film plane unambiguously establishes the presence of global in-plane uniaxial anisotropy. Angular variation of the linewidth in the film plane reveals that, in the CFS thin films of varying thickness, a crossover from the in-plane local four-fold symmetry (cubic anisotropy) to local two-fold symmetry (uniaxial anisotropy) occurs as t exceeds 50 nm. Gilbert damping parameter {alpha} decreases monotonously from 0.047 to 0.0078 with decreasing disorder strength (increasing TS) and jumps from 0.008 for the CFS film with t = 50 nm to 0.024 for the film with t equal 75 nm. Such variations of {alpha} with TS and t are understood in terms of the changes in the total (spin-up and spin-down) density of states at the Fermi level caused by the disorder and film thickness.
The phenomenology of magnetic damping is of critical importance for devices that seek to exploit the electronic spin degree of freedom since damping strongly affects the energy required and speed at which a device can operate. However, theory has struggled to quantitatively predict the damping, even in common ferromagnetic materials. This presents a challenge for a broad range of applications in spintronics and spin-orbitronics that depend on materials and structures with ultra-low damping. Such systems enable many experimental investigations that further our theoretical understanding of numerous magnetic phenomena such as damping and spin-transport mediated by chirality and the Rashba effect. Despite this requirement, it is believed that achieving ultra-low damping in metallic ferromagnets is limited due to the scattering of magnons by the conduction electrons. However, we report on a binary alloy of Co and Fe that overcomes this obstacle and exhibits a damping parameter approaching 0.0001, which is comparable to values reported only for ferrimagnetic insulators. We explain this phenomenon by a unique feature of the bandstructure in this system: The density of states exhibits a sharp minimum at the Fermi level at the same alloy concentration at which the minimum in the magnetic damping is found. This discovery provides both a significant fundamental understanding of damping mechanisms as well as a test of theoretical predictions.