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Register a new userElectrical control of spins and giant g-factors in ring-like coupled quantum dots
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Emerging theoretical concepts for quantum technologies have driven a continuous search for structures where a quantum state, such as spin, can be manipulated efficiently. Central to many concepts is the ability to control a system by electric and magnetic fields, relying on strong spin-orbit interaction and a large g-factor. Here, we present a new mechanism for spin and orbital manipulation using small electric and magnetic fields. By hybridizing specific quantum dot states at two points inside InAs nanowires, nearly perfect quantum rings form. Large and highly anisotropic effective g-factors are observed, explained by a strong orbital contribution. Importantly, we find that the orbital and spin-orbital contributions can be efficiently quenched by simply detuning the individual quantum dot levels with an electric field. In this way, we demonstrate not only control of the effective g-factor from 80 to almost 0 for the same charge state, but also electrostatic change of the ground state spin.
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Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising alternative. Holes in III-V semiconductors have unique properties, such as strong spin-orbit interaction and weak coupling to nuclear spins, and therefore have potential for enhanced spin control and longer coherence times. Weaker hyperfine interaction has already been reported in self-assembled quantum dots using quantum optics techniques. However, challenging fabrication has so far kept the promise of hole-spin-based electronic devices out of reach in conventional III-V heterostructures. Here, we report gate-tuneable hole quantum dots formed in InSb nanowires. Using these devices we demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tuneable between hole and electron QDs, enabling direct comparison between the hyperfine interaction strengths, g-factors and spin blockade anisotropies in the two regimes.
We study the g-factor of discrete electron states in InAs nanowire based quantum dots. The g values are determined from the magnetic field splitting of the zero bias anomaly due to the spin 1/2-Kondo effect. Unlike to previous studies based on 2DEG quantum dots, the g-factors of neighboring electron states show a surprisingly large fluctuation: g can scatter between 2 and 18. Furthermore electric gate tunability of the g-factor is demonstrated.
A spin qubit in semiconductor quantum dots holds promise for quantum information processing for scalability and long coherence time. An important semiconductor qubit system is a double quantum dot trapping two electrons or holes, whose spin states encode either a singlet-triplet qubit or two single-spin qubits coupled by exchange interaction. In this article, we report progress on spin dephasing of two exchange-coupled spins in a double quantum dot. We first discuss the schemes of two-qubit gates and qubit encodings in gate-defined quantum dots or donor atoms based on the exchange interaction. Then, we report the progress on spin dephasing of a singlet-triplet qubit or a two-qubit gate. The methods of suppressing spin dephasing are further discussed. The understanding of spin dephasing may provide insights into the realization of high-fidelity quantum gates for spin-based quantum computing.
Electrically tunable g-factors in quantum dots are highly desirable for applications in quantum computing and spintronics. We report giant modulation of the hole g-factor in a SiGe nanocrystal when an electric field is applied to the nanocrystal along its growth direction. We derive a contribution to the g-factor that stems from an orbital effect of the magnetic field, which lifts the Kramers degeneracy in the nanocrystal by altering the mixing between the heavy and the light holes. We show that the relative displacement between the heavy- and light-hole wave functions, occurring upon application of the electric field, has an effect on the mixing strength and leads to a strong non-monotonic modulation of the g-factor. Despite intensive studies of the g-factor since the late 50s, this mechanism of g-factor control has been largely overlooked in the literature.
The knowledge of electron and hole g-factors, their control and engineering are key for the usage of the spin degree of freedom for information processing in solid state systems. The electronic g-factor will be materials dependent, the effect being larger for materials with large spin-orbit coupling. Since electrons can be individually trapped into quantum dots in a controllable manner, they may represent a good platform for the implementation of quantum information processing devices. Here we use self-assembled quantum dots of InAs embedded in GaAs for the g-factor control and engineering.
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