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Register a new userLow damping magnetic properties and perpendicular magnetic anisotropy with strong volume contribution in the Heusler alloy Fe1.5CoGe
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We present a study of the dynamic magnetic properties of TiN-buffered epitaxial thin films of the Heusler alloy Fe$_{1.5}$CoGe. Thickness series annealed at different temperatures are prepared and the magnetic damping is measured, a lowest value of $alpha=2.18times 10^{-3}$ is obtained. The perpendicular magnetic anisotropy properties in Fe$_{1.5}$CoGe/MgO are also characterized. The evolution of the interfacial perpendicular anisotropy constant $K^{perp}_{rm S}$ with the annealing temperature is shown and compared with the widely used CoFeB/MgO interface. A large volume contribution to the perpendicular anisotropy of $(4.3pm0.5)times 10^{5}$ $rm J/m^3$ is also found, in contrast with vanishing bulk contribution in common Co- and Fe-based Heusler alloys.
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Single-crystal Heusler atomic-scale superlattices that have been predicted to exhibit perpendicular magnetic anisotropy and half-metallicity have been successfully grown by molecular beam epitaxy. Superlattices consisting of full-Heusler Co$_2$MnAl and Fe$_2$MnAl with one to three unit cell periodicity were grown on GaAs (001), MgO (001), and Cr (001)/MgO (001). Electron energy loss spectroscopy maps confirmed clearly segregated epitaxial Heusler layers with high cobalt or high iron concentrations for samples grown near room temperature on GaAs (001). Superlattice structures grown with an excess of aluminum had significantly lower thin film shape anisotropy and resulted in an out-of-plane spin reorientation transition at temperatures below 200 K for samples grown on GaAs (001). Synchrotron-based spin resolved photoemission spectroscopy found that the superlattice structure improves the Fermi level spin polarization near the X point in the bulk Brillouin zone. Stoichiometric Co$_2$MnAl terminated superlattice grown on MgO (001) had a spin polarization of 95%, while a pure Co$_2$MnAl film had a spin polarization of only 65%.
We have systemically studied the effects of annealing temperature and alloy composition on the structural and magnetic properties of bulk Ni$_{2}$MnGe and Ni$_{2.1}$Mn$_{0.9}$Ge Heusler alloys. We have observed that both annealing temperature and the alloy composition drastically alter the phases found in the samples due to the presence of competing ternary phases. Annealing at 900 and 950 $^{circ}$C for both alloy compositions facilitate the formation of L2$_{1}$ Heusler phase. Nevertheless, formation of Ni$_{5}$Mn$_{4}$Ge$_{3}$ and Ni$_{16}$Mn$_{6}$Ge$_{7}$ phases cannot be prevented for Ni$_{2}$MnGe and Ni$_{2.1}$Mn$_{0.9}$Ge alloys, respectively. In order to estimate the magnetic contribution of the Ni$_{5}$Mn$_{4}$Ge$_{3}$ impurity phase to that of the parent Ni$_{2}$MnGe, we have also synthesized pure Ni$_{5}$Mn$_{4}$Ge$_{3}$ alloy. Antiferromagnetic nature of Ni$_{5}$Mn$_{4}$Ge$_{3}$ with low magnetization response allows us to reveal the magnetic response of the stoichiometric bulk Ni$_{2}$MnGe. Bulk Ni$_{2}$MnGe shows simple ferromagnetic behavior with a Curie temperature of 300 K, in agreement with the previous results on thin films. Despite the divergence of magnetization curves between field cooled (FC) and field heated (FH) modes, stoichiometric Ni$_{2}$MnGe alloy does not undergo a martensitic phase transition based on our variable temperature x-ray diffraction experiments.
Ferromagnetic resonance (FMR) technique has been used to study the magnetization relaxation processes and magnetic anisotropy in two different series of the Co2FeSi (CFS) Heusler alloy thin films, deposited on the Si(111) substrate by UHV sputtering. While the CFS films of fixed (50 nm) thickness, deposited at different substrate temperatures (TS) ranging from room temperature (RT) to 600^C, constitute the series-I, the CFS films with thickness t varying from 12 nm to 100 nm and deposited at 550^C make up the series-II. In series-I, the CFS films deposited at TS = RT and 200^C are completely amorphous, the one at TS = 300^C is partially crystalline, and those at TS equal 450^C, 550^C and 600^C are completely crystalline with B2 order. By contrast, all the CFS films in series-II are in the fully-developed B2 crystalline state. Irrespective of the strength of disorder and film thickness, angular variation of the resonance field in the film plane unambiguously establishes the presence of global in-plane uniaxial anisotropy. Angular variation of the linewidth in the film plane reveals that, in the CFS thin films of varying thickness, a crossover from the in-plane local four-fold symmetry (cubic anisotropy) to local two-fold symmetry (uniaxial anisotropy) occurs as t exceeds 50 nm. Gilbert damping parameter {alpha} decreases monotonously from 0.047 to 0.0078 with decreasing disorder strength (increasing TS) and jumps from 0.008 for the CFS film with t = 50 nm to 0.024 for the film with t equal 75 nm. Such variations of {alpha} with TS and t are understood in terms of the changes in the total (spin-up and spin-down) density of states at the Fermi level caused by the disorder and film thickness.
[Co/Ni] multilayers with perpendicular magnetic anisotropy (PMA) have been researched and applied in various spintronic applications. Typically the seed layer material is studied to provide the desired face-centered cubic (textit{fcc}) texture to the [Co/Ni] to obtain PMA. The integration of [Co/Ni] in back-end-of-line (BEOL) processes also requires the PMA to survive post-annealing. In this paper, the impact of NiCr, Pt, Ru, and Ta seed layers on the structural and magnetic properties of [Co(0.3 nm)/Ni(0.6 nm)] multilayers is investigated before and after annealing. The multilayers were deposited textit{in-situ} on different seeds via physical vapor deposition at room temperature. The as-deposited [Co/Ni] films show the required textit{fcc}(111) texture on all seeds, but PMA is only observed on Pt and Ru. In-plane magnetic anisotropy (IMA) is obtained on NiCr and Ta seeds, which is attributed to strain-induced PMA loss. PMA is maintained on all seeds after post-annealing up to 400$^{circ}$C. The largest effective perpendicular anisotropy energy ($K_U^{mathrm{eff}}approx 2times10^5$J/m$^3$) after annealing is achieved on NiCr seed. The evolution of PMA upon annealing cannot be explained by further crystallization during annealing or strain-induced PMA, nor can the observed magnetization loss and the increased damping after annealing. Here we identify the diffusion of the non-magnetic materials from the seed into [Co/Ni] as the major driver of the changes in the magnetic properties. By selecting the seed and post-annealing temperature, the [Co/Ni] can be tuned in a broad range for both PMA and damping.
Titanium disulfide TiS$_2$, which is a member of the layered transition-metal dichalcogenides with the 1T-CdI$_2$-type crystal structure, is known to exhibit a wide variety of magnetism through intercalating various kinds of transition-metal atoms of different concentrations. Among them, Fe-intercalated titanium disulfide Fe$_x$TiS$_2$ is known to be ferromagnetic with strong perpendicular magnetic anisotropy (PMA) and large coercive fields ($H_text{c}$). In order to study the microscopic origin of the magnetism of this compound, we have performed X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) measurements on single crystals of heavily intercalated Fe$_x$TiS$_2$ ($xsim0.5$). The grown single crystals showed a strong PMA with a large $H_text{c}$ of $mu_0H_text{c} simeq 1.0 text{T}$. XAS and XMCD spectra showed that Fe is fully in the valence states of 2+ and that Ti is in an itinerant electronic state, indicating electron transfer from the intercalated Fe atoms to the host TiS$_2$ bands. The Fe$^{2+}$ ions were shown to have a large orbital magnetic moment of $simeq 0.59 mu_text{B}text{/Fe}$, to which, combined with the spin-orbit interaction and the trigonal crystal field, we attribute the strong magnetic anisotropy of Fe$_x$TiS$_2$.
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