No Arabic abstract
Fractional quantum Hall states at half-integer filling factors have been observed in many systems beyond the $5/2$ and $7/2$ plateaus in GaAs quantum wells. This includes bilayer states in GaAs, several half-integer plateaus in ZnO-based heterostructures, and quantum Hall liquids in graphene. In all cases, Cooper pairing of composite fermions is believed to explain the plateaus. The nature of Cooper pairing and the topological order on those plateaus are hotly debated. Different orders are believed to be present in different systems. This makes it important to understand experimental signatures of all proposed orders. We review the expected experimental signatures for all possible composite-fermion states at half-integer filling. We address Mach-Zehnder interferometry, thermal transport, tunneling experiments, and Fabry-P{e}rot interferometry. For this end, we introduce a uniform description of the topological orders of Kitaevs sixteenfold way in terms of their wave-functions, effective Hamiltonians, and edge theories.
We study the spectral properties of infinite rectangular quantum graphs in the presence of a magnetic field. We study how these properties are affected when three-dimensionality is considered, in particular, the chaological properties. We then establish the quantization of the Hall transverse conductivity for these systems. This quantization is obtained by relating the transverse conductivity to topological invariants. The different integer values of the Hall conductivity are explicitly computed for an anisotropic diffusion system which leads to fractal phase diagrams.
Emergence of half-integer filling factor states, such as nu=5/2 and 7/2, is found in quantum dots by using numerical many-electron methods. These states have interesting similarities and differences with their counterstates found in the two-dimensional electron gas. The nu=1/2 states in quantum dots are shown to have high overlaps with the composite fermion states. The lower overlap of the Pfaffian state indicates that electrons might not be paired in quantum dot geometry. The predicted nu=5/2 state has high spin polarization which may have impact on the spin transport through quantum dot devices.
In this review the physics of Pfaffian paired states, in the context of fractional quantum Hall effect, is discussed using field-theoretical approaches. The Pfaffian states are prime examples of topological ($p$-wave) Cooper pairing and are characterized by non-Abelian statistics of their quasiparticles. Here we focus on conditions for their realization and competition among them at half-integer filling factors. Using the Dirac composite fermion description, in the presence of a mass term, we study the influence of Landau level mixing in selecting a particular Pfaffian state. While Pfaffian and anti-Pfaffian are selected when Landau level mixing is not strong, and can be taken into account perturbatively, the PH Pfaffian state requires non-perturbative inclusion of at least two Landau levels. Our findings, for small Landau level mixing, are in accordance with numerical investigations in the literature, and call for a non-perturbative approach in the search for PH Pfaffian correlations. We demonstrated that a method based on the Chern-Simons field-theoretical approach can be used to generate characteristic interaction pseudo-potentials for Pfaffian paired states.
We theoretically study the quantum Hall effect (QHE) in graphene with an ac electric field. Based on the tight-binding model, the structure of the half-integer Hall plateaus at $sigma_{xy} = pm(n + 1/2)4e^2/h$ ($n$ is an integer) gets qualitatively changed with the addition of new integer Hall plateaus at $sigma_{xy} = pm n(4e^2/h)$ starting from the edges of the band center regime towards the band center with an increasing ac field. Beyond a critical field strength, a Hall plateau with $sigma_{xy} = 0$ can be realized at the band center, hence restoring fully a conventional integer QHE with particle-hole symmetry. Within a low-energy Hamiltonian for Dirac cones merging, we show a very good agreement with the tight-binding calculations for the Hall plateau transitions. We also obtain the band structure for driven graphene ribbons to provide a further understanding on the appearance of the new Hall plateaus, showing a trivial insulator behavior for the $sigma_{xy} = 0$ state. In the presence of disorder, we numerically study the disorder-induced destruction of the quantum Hall states in a finite driven sample and find that qualitative features known in the undriven disordered case are maintained.
The quantum Hall effect, with a Berrys phase of $pi$ is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is $sim$ 20,000 cm$^2$/V$cdot$s at 4 K and ~15,000 cm$^2$/V$cdot$s at 300 K despite contamination and substrate steps. This is comparable to the best exfoliated graphene flakes on SiO$_2$ and an order of magnitude larger than Si-face epitaxial graphene monolayers. These and other properties indicate that C-face epitaxial graphene is a viable platform for graphene-based electronics.