No Arabic abstract
Employing electrons for direct control of nanoscale reaction is highly desirable since it provides fabrication of nanostructures with different properties at atomic resolution and with flexibility of dimension and location. Here, applying in situ transmission electron microscopy, we show the reversible oxidation and reduction kinetics in Ag, well controlled by changing the dose rate of electron beam. Aberration-corrected high-resolution transmission electron microscopy observation reveals that O atoms are preferably inserted and extracted along the {111} close-packed planes of Ag, leading to the nucleation and decomposition of nanoscale Ag2O islands on the Ag substrate. By controlling electron beam size and dose rate, we demonstrated fabrication of an array of 3 nm Ag2O nanodots in an Ag matrix. Our results open up a new pathway to manipulate atomistic reaction with electron beam towards the precise fabrication of nanostructures for device applications.
Cobalt and silver co-doping has been undertaken in ZnO thin films grown by pulsed laser deposition in order to investigate the ferromagnetic properties in ZnO-based diluted magnetic materials and to understand the eventual relation between ferromagnetism and charge carriers. Hall transport measurements reveal that Ag doping up to 5% leads to a progressive compensation of the native n-type carriers. The magnetization curves show ferromagnetic contributions for all samples at both 5 K and room temperature, decreasing with increasing the Ag concentration. First principles modeling of the possible configurations of Co-Ag defects suggest the formation of nano-clusters around interstitial Co impurity as the origin of the ferromagnetism. The Ag co-doping results in a decrease of the total spin of these clusters and of the Curie temperature.
The precise positioning of dopant atoms within bulk crystal lattices could enable novel applications in areas including solid-state sensing and quantum computation. Established scanning probe techniques are capable tools for the manipulation of surface atoms, but at a disadvantage due to their need to bring a physical tip into contact with the sample. This has prompted interest in electron-beam techniques, followed by the first proof-of-principle experiment of bismuth dopant manipulation in crystalline silicon. Here, we use first principles modeling to discover a novel indirect exchange mechanism that allows electron impacts to non-destructively move dopants with atomic precision within the silicon lattice. However, this mechanism only works for the two heaviest group V donors with split-vacancy configurations, Bi and Sb. We verify our model by directly imaging these configurations for Bi, and by demonstrating that the promising nuclear spin qubit Sb can be manipulated using a focused electron beam.
Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors emerging promising applications in diverse optoelectronic devices. To improve performance, recent investigations have been systematically focused on the tuning of their optical properties. However, an all-optical approach with the reversible feature is still a challenge. Here we demonstrate the tunability of the photoluminescence (PL) properties of monolayer WS2 via laser irradiation. The modulation of PL intensity, as well as the conversion between neutral exciton and charged trion have been readily and reversibly achieved by using different laser power densities. We attribute the reversible manipulation to the laser-assisted adsorption and desorption of gas molecules, which will deplete or release free electrons from the surface of WS2 and thus modify its PL properties. This all-optical manipulation, with advantages of reversibility, quantitative control, and high spatial resolution, suggests promising applications of TMDs monolayers in optoelectronic and nanophotonic applications, such as optical data storage, micropatterning, and display.
We present density-functional results on the lifetime of the (111) surface state of the noble metals. We consider scattering on the Fermi surface caused by impurity atoms belonging to the 3d and 4sp series. The results are analyzed with respect to film thickness and with respect to separation of scattering into bulk or into surface states. While for impurities in the surface layer the overall trends are similar to the long-known bulk-state scattering, for adatom-induced scattering we find a surprising behavior with respect to the adatom atomic number. A plateau emerges in the scattering rate of the 3d adatoms, instead of a peak characteristic of the d resonance. Additionally, the scattering rate of 4sp adatoms changes in a zig-zag pattern, contrary to a smooth parabolic increase following Lindes rule that is observed in bulk. We interpret these results in terms of the weaker charge-screening and of interference effects induced by the lowering of symmetry at the surface.
Focused ion beam (FIB) and scanning electron microscopy (SEM) are used to reversibly switch improper ferroelectric domains in the hexagonal manganite ErMnO$_3$. Surface charging is achieved by local ion (positive charging) and electron (positive and negative charging) irradiation, which allows controlled polarization switching without the need for electrical contacts. Polarization cycling reveals that the domain walls tend to return to the equilibrium configuration obtained in the as-grown state. The electric field response of sub-surface domains is studied by FIB cross-sectioning, revealing the 3D switching behavior. The results clarify how the polarization reversal in hexagonal manganites progresses at the level of domains, resolving both domain wall movements and the nucleation and growth of new domains. Our FIB-SEM based switching approach is applicable to all ferroelectrics where a sufficiently large electric field can be built up via surface charging, facilitating contact-free high-resolution studies of the domain and domain wall response to electric fields in 3D.