Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userDark vertical conductance of cavity-embedded semiconductor heterostructures
64
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We present a linear-response nonlocal theory of the electronic conductance along the vertical (growth) direction of a semiconductor heterostructure embedded in a single-mode electromagnetic resonator in the absence of illumination. Our method readily applies to the general class of n-doped semiconductors with parabolic dispersion. The conductance depends on the ground-state properties and virtual collective polaritonic excitations that have been determined via a bosonic treatment in the dipole gauge. We show that, depending on the system parameters, the cavity vacuum effects can enhance or reduce significantly the dark vertical conductance with respect to the bare heterostructure.
rate research
Read More
We theoretically explore the driven-dissipative physics of geometrically frustrated lattices of cavity resonators with relatively weak nonlinearities, i.e. a photon-photon interaction smaller than the loss rate. In such systems, photon modes with zero probability at dark sites are present at the single-particle level due to interference effects. In particular, we study the behavior of a cell with three coupled resonators as well as extended Lieb lattices in 1D and 2D. By considering a partial pumping scheme, with the driving field not applied to the dark sites, we predict that even in presence of relatively weak photon-photon interactions the nominally dark sites achieve a finite photonic population with strong correlations. We show that this is a consequence of biphoton and multiphoton states that in the absence of frustration would not be visible in the observables.
We investigate the dynamical behavior of entanglement in a system made by two solid-state emitters, as two quantum dots, embedded in two separated micro-cavities. In these solid-state systems, in addition to the coupling with the cavity mode, the emitter is coupled to a continuum of leaky modes providing additional losses and it is also subject to a phonon-induced pure dephasing mechanism. We model this physical configuration as a multipartite system composed by two independent parts each containing a qubit embedded in a single-mode cavity, exposed to cavity losses, spontaneous emission and pure dephasing. We study the time evolution of entanglement of this multipartite open system finally applying this theoretical framework to the case of currently available solid-state quantum dots in micro-cavities.
We report on a combined experimental and theoretical investigation into the normal modes of an all-fiber coupled cavity-quantum-electrodynamics system. The interaction between atomic ensembles and photons in the same cavities, and that between the photons in these cavities and the photons in the fiber connecting these cavities, generates five non-degenerate normal modes. We demonstrate our ability to excite each normal mode individually. We study particularly the `cavity dark mode, in which the two cavities coupled directly to the atoms do not exhibit photonic excitation. Through the observation of this mode, we demonstrate remote excitation and nonlocal saturation of atoms.
Semiconductor heterostructure is a critical building block for modern semiconductor devices. However, forming semiconductor heterostructures of lattice-mismatch has been a great challenge for several decades. Epitaxial growth is infeasible to form abrupt heterostructures with large lattice-mismatch while mechanical-thermal bonding results in a high density of interface defects and therefore severely limits device applications. Here we show an ultra-thin oxide-interfaced approach for the successful formation of lattice-mismatched semiconductor heterostructures. Following the depiction of a theory on the role of interface oxide in forming the heterostructures, we describe experimental demonstrations of Ge/Si (diamond lattices), Si/GaAs (zinc blende lattice), GaAs/GaN (hexagon lattice), and Si/GaN heterostructures. Extraordinary electrical performances in terms of ideality factor, current on/off ratio, and reverse breakdown voltage are measured from p-n diodes fabricated from the four types of heterostructures, significantly outperforming diodes derived from other methods. Our demonstrations indicate the versatility of the ultra-thin-oxide-interface approach in forming lattice-mismatched heterostructures, open up a much larger possibility for material combinations for heterostructures, and pave the way toward broader applications in electronic and optoelectronic realms.
We present a new micromechanical resonator designed for cavity optomechanics. We have used a micropillar geometry to obtain a high-frequency mechanical resonance with a low effective mass and a very high quality factor. We have coated a 60-$mu$m diameter low-loss dielectric mirror on top of the pillar and are planning to use this micromirror as part of a high-finesse Fabry-Perot cavity, to laser cool the resonator down to its quantum ground state and to monitor its quantum position fluctuations by quantum-limited optical interferometry.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
