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Register a new userTunable crystal symmetry in graphene-boron nitride heterostructures with coexisting moire superlattices
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In heterostructures consisting of atomically thin crystals layered on top of one another, lattice mismatch or rotation between the layers results in long-wavelength moire superlattices. These moire patterns can drive significant band structure reconstruction of the composite material, leading to a wide range of emergent phenomena including superconductivity, magnetism, fractional Chern insulating states, and moire excitons. Here, we investigate monolayer graphene encapsulated between two crystals of boron nitride (BN), where the rotational alignment between all three components can be varied. We find that band gaps in the graphene arising from perfect rotational alignment with both BN layers can be modified substantially depending on whether the relative orientation of the two BN layers is 0 or 60 degrees, suggesting a tunable transition between the absence or presence of inversion symmetry in the heterostructure. Small deviations ($<1^{circ}$) from perfect alignment of all three layers leads to coexisting long-wavelength moire potentials, resulting in a highly reconstructed graphene band structure featuring multiple secondary Dirac points. Our results demonstrate that the interplay between multiple moire patterns can be utilized to controllably modify the electronic properties of the composite heterostructure.
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We investigate the electronic structure of the flat bands induced by moire superlattices and electric fields in nearly aligned ABC trilayer graphene-boron nitride interfaces where Coulomb effects can lead to correlated gapped phases. Our calculations indicate that valley-spin resolved isolated superlattice flat bands that carry a finite Chern number $C = 3$ proportional to layer number can appear near charge neutrality for appropriate perpendicular electric fields and twist angles. When the degeneracy of the bands is lifted by Coulomb interactions these topological bands can lead to anomalous quantum Hall phases that embody orbital and spin magnetism. Narrow bandwidths of $sim10$ meV achievable for a continuous range of twist angles $theta lesssim 0.6^{circ}$ with moderate interlayer potential differences of $sim$50 meV make the TLG/BN systems a promising platform for the study of electric-field tunable Coulomb interaction driven spontaneous Hall phases.
Rhombohedral $N = 3$ trilayer graphene on hexagonal boron nitride (TLG/BN) hosts gate-tunable, valley-contrasting, nearly flat topological bands that can trigger spontaneous quantum Hall phases under appropriate conditions of the valley and spin polarization. Recent experiments have shown signatures of C = 2 valley Chern bands at 1/4 hole filling, in contrast to the predicted value of C = 3. We discuss the low-energy model for rhombohedral N-layer graphene (N = 1, 2, 3) aligned with hexagonal boron nitride (hBN) subject to off-diagonal moire vector potential terms that can alter the valley Chern numbers. Our analysis suggests that topological phase transitions of the flat bands can be triggered by pseudomagnetic vector field potentials associated to moire strain patterns, and that a nematic order with broken rotational symmetry can lead to valley Chern numbers that are in agreement with recent Hall conductivity observations.
Van der Waals heterostructures of graphene and hexagonal boron nitride feature a moire superlattice for graphenes Dirac electrons. Here, we review the effects generated by this superlattice, including a specific miniband structure featuring gaps and secondary Dirac points, and a fractal spectrum of magnetic minibands known as Hofstadters butterfly.
Studies on two-dimensional electron systems in a strong magnetic field first revealed the quantum Hall (QH) effect, a topological state of matter featuring a finite Chern number (C) and chiral edge states. Haldane later theorized that Chern insulators with integer QH effects could appear in lattice models with complex hopping parameters even at zero magnetic field. The ABC-trilayer graphene/hexagonal boron nitride (TLG/hBN) moire superlattice provides an attractive platform to explore Chern insulators because it features nearly flat moire minibands with a valley-dependent electrically tunable Chern number. Here we report the experimental observation of a correlated Chern insulator in a TLG/hBN moire superlattice. We show that reversing the direction of the applied vertical electric field switches TLG/hBNs moire minibands between zero and finite Chern numbers, as revealed by dramatic changes in magneto-transport behavior. For topological hole minibands tuned to have a finite Chern number, we focus on 1/4 filling, corresponding to one hole per moire unit cell. The Hall resistance is well quantized at h/2e2, i.e. C = 2, for |B| > 0.4 T. The correlated Chern insulator is ferromagnetic, exhibiting significant magnetic hysteresis and a large anomalous Hall signal at zero magnetic field. Our discovery of a C = 2 Chern insulator at zero magnetic field should open up exciting opportunities for discovering novel correlated topological states, possibly with novel topological excitations, in nearly flat and topologically nontrivial moire minibands.
Van der Waals heterostructures employing graphene and hexagonal boron nitride (hBN) crystals have emerged as a promising platform for plasmonics thanks to the tunability of their collective modes with carrier density and record values for plasmonics figures of merit. In this Article we investigate theoretically the role of moire-pattern superlattices in nearly aligned graphene on hBN by using continuum-model Hamiltonians derived from ab initio calculations. We calculate the systems energy loss function for a variety of chemical potential values that are accessible in gated devices. Our calculations reveal that the electron-hole asymmetry of the moire bands leads to a remarkable asymmetry of the plasmon dispersion between positive and negative chemical potentials, showcasing the intricate band structure and rich absorption spectrum across the secondary Dirac point gap for the hole bands.
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