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Register a new userStrain control of the Neel vector in Mn-based antiferromagnets
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Control of the Neel vector in antiferromagnetic materials is one of the challenges preventing their use as active device components. Several methods have been investigated such as exchange bias, electric current, and spin injection, but little is known about strain-mediated anisotropy. This study of the antiferromagnetic L10-type MnX alloys MnIr, MnRh, MnNi, MnPd, and MnPt shows that a small amount of strain effectively rotates the direction of the Neel vector by 90 degrees for all of the materials. For MnIr, MnRh, MnNi, and MnPd, the Neel vector rotates within the basal plane. For MnPt, the Neel vector rotates from out-of-plane to in-plane under tensile strain. The effectiveness of strain control is quantified by a metric of efficiency and by direct calculation of the magnetostriction coefficients. The values of the magnetostriction coefficients are comparable with those from ferromagnetic materials. These results indicate that strain is a mechanism that can be exploited for control of the Neel vectors in this family of antiferromagnets.
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Antiferromagnetic thin films typically exhibit a multi-domain state, and control of the antiferromagnetic Neel vector is challenging as antiferromagnetic materials are robust to magnetic perturbations. By relying on anisotropic in-plane strain engineering of epitaxial thin films of the prototypical antiferromagnetic material LaFeO3, uniaxial Neel vector control is demonstrated. Orthorhombic (011)- and (101)-oriented DyScO3, GdScO3 and NdGaO3 substrates are used to engineer different anisotropic in-plane strain states. The anisotropic in-plane strain stabilises structurally monodomain monoclinic LaFeO3 thin films. The uniaxial Neel vector is found along the tensile strained b axis, contrary to bulk LaFeO3 having the Neel vector along the shorter a axis, and no magnetic domains are found. Hence, anisotropic strain engineering is a viable tool for designing unique functional responses, further enabling antiferromagnetic materials for mesoscopic device technology.
Metallic antiferromagnets with broken inversion symmetry on the two sublattices, strong spin-orbit coupling and high N{e}el temperatures offer new opportunities for applications in spintronics. Especially Mn$_{2}$Au, with high N{e}el temperature and conductivity, is particularly interesting for real-world applications. Here, manipulation of the orientation of the staggered magnetization,textit{ i.e.} the N{e}el vector, by current pulses has been recently demonstrated, with the read-out limited to studies of anisotropic magnetoresistance or X-ray magnetic linear dichroism. Here, we report on the in-plane reflectivity anisotropy of Mn$_{2}$Au (001) films, which were N{e}el vector aligned in pulsed magnetic fields. In the near-infrared, the anisotropy is $approx$ 0.6%, with higher reflectivity for the light polarized along the N{e}el vector. The observed magnetic linear dichroism is about four times larger than the anisotropic magnetoresistance. This suggests the dichroism in Mn$_{2}$Au is a result of the strong spin-orbit interactions giving rise to anisotropy of interband optical transitions, in-line with recent studies of electronic band-structure. The considerable magnetic linear dichroism in the near-infrared could be used for ultrafast optical read-out of the N{e}el vector in Mn$_{2}$Au.
Ferroelectricity, especially in hafnia-based thin films at nanosizes, has been rejuvenated in the fields of low-power, nonvolatile and Si-compatible modern memory and logic applications. Despite tremendous efforts to explore the formation of the metastable ferroelectric phase and the polarization degradation during field cycling, the ability of oxygen vacancy to exactly engineer and switch polarization remains to be elucidated. Here we report reversibly electrochemical control of ferroelectricity in Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) heterostructures with a mixed ionic-electronic LaSrMnO$_3$ electrode, achieving a hard breakdown field more than 18 MV/cm, over fourfold as high as that of typical HZO. The electrical extraction and insertion of oxygen into HZO is macroscopically characterized and atomically imaged in situ. Utilizing this reversible process, we achieved multiple polarization states and even repeatedly repaired the damaged ferroelectricity by reversed negative electric fields. Our study demonstrates the robust and switchable ferroelectricity in hafnia oxide distinctly associated with oxygen vacancy and opens up opportunities to recover, manipulate, and utilize rich ferroelectric functionalities for advanced ferroelectric functionality to empower the existing Si-based electronics such as multi-bit storage.
We study the laser control of magnon topological phases induced by the Aharonov-Casher effect in insulating antiferromagnets (AFs). Since the laser electric field can be considered as a time-periodic perturbation, we apply the Floquet theory and perform the inverse frequency expansion by focusing on the high frequency region. Using the obtained effective Floquet Hamiltonian, we study nonequilibrium magnon dynamics away from the adiabatic limit and its effect on topological phenomena. We show that a linearly polarized laser can generate helical edge magnon states and induce the magnonic spin Nernst effect, whereas a circularly polarized laser can generate chiral edge magnon states and induce the magnonic thermal Hall effect. In particular, in the latter, we find that the direction of the magnon chiral edge modes and the resulting thermal Hall effect can be controlled by the chirality of the circularly polarized laser through the change from the left-circular to the right-circular polarization. Our results thus provide a handle to control and design magnon topological properties in the insulating AF.
Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct band gap at mid-infrared wavelengths. Here, we investigate the effect of strain on the growth of GeSn alloys in a Ge/GeSn core/shell nanowire geometry. Incorporation of Sn content in the 10-20 at.% range is achieved with Ge core diameters ranging from 50nm to 100nm. While the smaller cores lead to the formation of a regular and homogeneous GeSn shell, larger cores lead to the formation of multi-faceted sidewalls and broadened segregation domains, inducing the nucleation of defects. This behavior is rationalized in terms of the different residual strain, as obtained by realistic finite element method simulations. The extended analysis of the strain relaxation as a function of core and shell sizes, in comparison with the conventional planar geometry, provides a deeper understanding of the role of strain in the epitaxy of metastable GeSn semiconductors.
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