Do you want to publish a course? Click here

High-performance 2D 1xN T-junction Wavelength (De)Multiplexer Systems by Inverse Design

65   0   0.0 ( 0 )
 Publication date 2019
  fields Physics
and research's language is English




Ask ChatGPT about the research

Previously proposed designs of integrated photonic devices have used the intuitive brute force approach or optimization methods that employ parameter search algorithms. However, a small parameter space and poor exploitation of the underlying physics have limited device performance, functionality, and footprint. In this paper, we propose efficient and compact 2D 1xN in-plane-incidence wavelength demultiplexers by using recently developed objective-first inverse design algorithm. Output ports in the presented 1xN photonic devices are located along the transverse to the input channel. Ultra-high device performance was achieved for the specific designs of 1x2, 1x4, and 1x6 wavelength (de)multiplexers with small footprints 2.80 um x 2.80 um, 2.80 um x 4.60 um, 2.80 um x 6.95 um, respectively. We used two approaches to binarization-level-set and binarization-cost-to obtain silicon wavelength demultiplexer considering fabrication constraints. For instance, the transmission efficiency of binarization-cost 1x2 demultiplexer was -0.30 dB for 1.31 um and -0.54 dB at 1.55 um while crosstalk at the operating wavelengths are negligibly small, i.e., -17.80 and -15.29 dB, respectively. Moreover, for the binarization-cost 1x4 demultiplexer, the transmission efficiency values were approximately -1.90 dB at 1.31, 1.39, 1.47, and 1.55 um as the crosstalk was approximately -13 dB. Furthermore, the objective-first algorithm was used to employ our demultiplexers as multiplexers which means the ports that were once used as inputs in demultiplexers are designed to be used as outputs. The inverse design approach that allows for the implementation of more than six output channels together with the proposed functionalities can help develop compact and manufacturable 2D 1xN couplers.



rate research

Read More

We report a 48-channel 100-GHz tunable laser near 1550 nm by integrating 16 DFB lasers. High wavelength-spacing uniformity is guaranteed by the reconstruction-equivalent-chirp technique, which enables a temperature tuning range below 20 Celsius degree.
The first waveguide coupled phosphide-based UTC photodiodes grown by Solid Source Molecular Beam Epitaxy (SSMBE) are reported in this paper. Metal Organic Vapour Phase Epitaxy (MOVPE) and Gas Source MBE (GSMBE) have long been the predominant growth techniques for the production of high quality InGaAsP materials. The use of SSMBE overcomes the major issue associated with the unintentional diffusion of zinc in MOVPE and gives the benefit of the superior control provided by MBE growth techniques without the costs and the risks of handling toxic gases of GSMBE. The UTC epitaxial structure contains a 300 nm n-InP collection layer and a 300 nm n++-InGaAsP waveguide layer. UTC-PDs integrated with Coplanar Waveguides (CPW) exhibit 3 dB bandwidth greater than 65 GHz and output RF power of 1.1 dBm at 100 GHz. We also demonstrate accurate prediction of the absolute level of power radiated by our antenna integrated UTCs, between 200 GHz and 260 GHz, using 3d full-wave modelling and taking the UTC-to-antenna impedance match into account. Further, we present the first optical 3d full-wave modelling of waveguide UTCs, which provides a detailed insight into the coupling between a lensed optical fibre and the UTC chip.
Metasurfaces provide the disruptive technology enabling miniaturization of complex cascades of optical elements on a plane. We leverage the benefits of such a surface to develop a planar integrated photonic beam collimator for on-chip optofluidic sensing applications. While most of the current work focuses on miniaturizing the optical detection hardware, little attention is given to develop on-chip hardware for optical excitation. In this manuscript, we propose a flat metasurface for beam collimation in optofluidic applications. We implement an inverse design approach to optimize the metasurface using gradient descent method and experimentally compare its characteristics with conventional binary grating-based photonic beam diffractors. The proposed metasurface can enhance the illumination efficiency almost two times in on-chip applications such as fluorescence imaging, Raman and IR spectroscopy and can enable multiplexing of light sources for high throughput biosensing.
The field of magnonics offers a new type of low-power information processing, in which magnons, the quanta of spin waves, carry and process data instead of electrons. Many magnonic devices were demonstrated recently, but the development of each of them requires specialized investigations and, usually, one device design is suitable for one function only. Here, we introduce the method of inverse-design magnonics, in which any functionality can be specified first, and a feedback-based computational algorithm is used to obtain the device design. Our proof-of-concept prototype is based on a rectangular ferromagnetic area which can be patterned using square shaped voids. To demonstrate the universality of this approach, we explore linear, nonlinear and nonreciprocal magnonic functionalities and use the same algorithm to create a magnonic (de-)multiplexer, a nonlinear switch and a circulator. Thus, inverse-design magnonics can be used to develop highly efficient rf applications as well as Boolean and neuromorphic computing building blocks.
High performance integrated electro-optic modulators operating at low temperature are critical for optical interconnects in cryogenic applications. Existing integrated modulators, however, suffer from reduced modulation efficiency or bandwidth at low temperatures because they rely on tuning mechanisms that degrade with decreasing temperature. Graphene modulators are a promising alternative, since graphenes intrinsic carrier mobility increases at low temperature. Here we demonstrate an integrated graphene-based electro-optic modulator whose 14.7 GHz bandwidth at 4.9 K exceeds the room-temperature bandwidth of 12.6 GHz. The bandwidth of the modulator is limited only by high contact resistance, and its intrinsic RC-limited bandwidth is 200 GHz at 4.9 K.
comments
Fetching comments Fetching comments
Sign in to be able to follow your search criteria
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا