No Arabic abstract
Employing elastic and inelastic neutron scattering (INS) techniques, we report on detailed microscopic properties of the ferromagnetism in he magnetic topological insulator (Bi$_{0.95}$Mn$_{0.05}$)$_{2}$Te$_{3}$. Neutron diffraction of polycrystalline samples show the ferromagnetic (FM) ordering is long-range within the basal plane, and mainly 2D in character with short-range correlations between layers below $T_{mathrm{C}} approx 13$ K. Despite the random distribution of the dliute Mn atoms, we find that the 2D-like magnetic peaks are commensurate with the chemical structure, and the absence of (00L) magnetic peaks denote that the Mn$^{2+}$ magnetic moments are normal to the basal planes. Surprisingly, we observed collective magnetic excitations, in this dilute magnetic system. Despite the dilute nature, the excitations are typical of quasi-2D FM systems, albeit are severely broadened at short wavelengths, likely due to the random spatial distribution of Mn atoms in the Bi planes. Detailed analysis of the INS provide energy scales of the exchange couplings and the single ion anisotropy.
The development of long-range ferromagnetic (FM) order in dilute magnetic topological insulators can induce dissipationless electronic surface transport via the quantum anomalous Hall effect. We measure the magnetic excitations in a prototypical magnetic topological crystalline insulator, Sn$_{0.95}$Mn$_{0.05}$Te, using inelastic neutron scattering. Neutron diffraction and magnetization data indicate that our Sn$_{0.95}$Mn$_{0.05}$Te sample has no FM long-range order above a temperature of 2 K. However, we observe slow, collective FM fluctuations ($<$~70 $mu$eV), indicating proximity to FM order. We also find a series of sharp peaks originating from local excitations of antiferromagnetically (AF) coupled and isolated Mn-Mn dimers with $J_{rm AF}=460$~$mu$eV@. The simultaneous presence of collective and localized components in the magnetic spectra highlight different roles for substituted Mn ions, with competition between FM order and the formation of AF-coupled Mn-Mn dimers.
The state of art in the theoretical and experimental studies of transition metal doped oxides (dilute magnetic dielectrics) is reviewed. The available data show that the generic non-equilibrium state of oxide films doped with magnetic impurities may either favor ferromagnetism with high Curie temperature or result in highly inhomogeneous state without long-range magnetic order. In both case concomitant defects (vacancies, interstitial ions play crucial part.
We present a first-principles study of the electronic, magnetic, and transport properties of the topological insulator Bi$_{2}$Te$_{3}$ doped with Mn atoms in substitutional (Mn$_{rm Bi}$) and interstitial van der Waals gap positions (Mn$_{rm i}$), which act as acceptors and donors, respectively. The effect of native Bi$_{rm Te}$- and Te$_{rm Bi}$-antisite defects and their influence on calculated electronic transport properties is also investigated. We have studied four models representing typical cases, namely (i) Bi$_{2}$Te$_{3}$ with and without native defects, (ii) Mn$_{rm Bi}$ defects with and without native defects, (iii) the same but for Mn$_{rm i}$ defects, and (iv) the combined presence of Mn$_{rm Bi}$ and Mn$_{rm i}$. It was found that lattice relaxations around Mn$_{rm Bi}$ defects play an important role for both magnetic and transport properties. The resistivity is strongly influenced by the amount of carriers, their type, and by the relative positions of the Mn-impurity energy levels and the Fermi energy. Our results indicate strategies to tune bulk resistivities, and also help to uncover the location of Mn atoms in measured samples. Calculations indicate that at least two of the considered defects have to be present simultaneously in order to explain the experimental observations, and the role of interstitials may be more important than expected.
A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of BSTS on its top half by employing tetrafluoro-7,7,8,8-tetracyanoquinodimethane as an organic acceptor molecule, a half surface can be converted to p-type with leaving the other half side as the opposite n-type, and consequently TPNJ can be created. By sweeping the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. A dramatic change in electrical transport observed at the TPNJ on 3D-TI thin films promises novel spin and charge transport of 3D-TIs for future spintronics.
Quasiparticle interference induced by cobalt adatoms on the surface of the topological insulator Bi$_{2}$Se$_{3}$ is studied by scanning tunneling microscopy, angle-resolved photoemission spectroscopy and X-ray magnetic circular dichroism. It is found that Co atoms are selectively adsorbed on top of Se sites and act as strong scatterers at the surface, generating anisotropic standing waves. A long-range magnetic order is found to be absent, and the surface state Dirac cone remains gapless. The anisotropy of the standing wave is ascribed to the heavily warped iso-energy contour of unoccupied states, where the scattering is allowed due to a non-zero out-of-plane spin.