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Register a new userSteering of the Skyrmion Hall Angle By Gate Voltage
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Magnetic skyrmions can be driven by an applied spin-polarized electron current which exerts a spin-transfer torque on the localized spins constituting the skyrmion. However, the longitudinal dynamics is plagued by the skyrmion Hall effect which causes the skyrmions to acquire a transverse velocity component. We show how to use spin-orbit interaction to control the skyrmion Hall angle and how the interplay of spin-transfer and spin-orbit torques can lead to a complete suppression of the transverse motion. Since the spin-orbit torques can be controlled all-electronically by a gate voltage, the skyrmion motion can be steered all-electronically on a broad racetrack at high speed and conceptually new writing and gating operations can be realized.
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The understanding of the dynamical properties of skyrmion is a fundamental aspect for the realization of a competitive skyrmion based technology beyond CMOS. Most of the theoretical approaches are based on the approximation of a rigid skyrmion. However, thermal fluctuations can drive a continuous change of the skyrmion size via the excitation of thermal modes. Here, by taking advantage of the Hilbert-Huang transform, we demonstrate that at least two thermal modes can be excited which are non-stationary in time. In addition, one limit of the rigid skyrmion approximation is that this hypothesis does not allow for correctly describing the recent experimental evidence of skyrmion Hall angle dependence on the amplitude of the driving force, which is proportional to the injected current. In this work, we show that, in an ideal sample, the combined effect of field-like and damping-like torques on a breathing skyrmion can indeed give rise to such a current dependent skyrmion Hall angle. While here we design and control the breathing mode of the skyrmion, our results can be linked to the experiments by considering that the thermal fluctuations and/or disorder can excite the breathing mode. We also propose an experiment to validate our findings.
In order to realize applications of hydrogen-adsorbed graphene, a main issue is how to control hydrogen adsorption/desorption at room temperature. In this study, we demonstrate the possibility to tune hydrogen adsorption on graphene by applying a gate voltage. The influence of the gate voltage on graphene and its hydrogen adsorption properties was investigated by electrical transport measurements, scanning tunneling microscopy, and density functional theory calculations. We show that more hydrogen adsorbs on graphene with negative gate voltage (p-type doping), compared to that without gate voltage or positive gate voltage (n-type doping). Theoretical calculations explain the gate voltage dependence of hydrogen adsorption as modifications of the adsorption energy and diffusion barrier of hydrogen on graphene by charge doping.
Magnetic skyrmions are topologically non-trivial nanoscale objects. Their topology, which originates in their chiral domain wall winding, governs their unique response to a motion-inducing force. When subjected to an electrical current, the chiral winding of the spin texture leads to a deflection of the skyrmion trajectory, characterized by an angle with respect to the applied force direction. This skyrmion Hall angle was believed to be skyrmion diameter-dependent. In contrast, our experimental study finds that within the plastic flow regime the skyrmion Hall angle is diameter-independent. At an average velocity of 6 $pm$ 1 m/s the average skyrmion Hall angle was measured to be 9{deg} $pm$ 2{deg}. In fact, in the plastic flow regime, the skyrmion dynamics is dominated by the local energy landscape such as materials defects and the local magnetic configuration.
Magnetic skyrmions are exciting candidates for energy-efficient computing due to their non-volatility, detectability,and mobility. A recent proposal within the paradigm of reversible computing enables large-scale circuits composed ofdirectly-cascaded skyrmion logic gates, but it is limited by the manufacturing difficulty and energy costs associated withthe use of notches for skyrmion synchronization. To overcome these challenges, we therefore propose a skyrmion logicsynchronized via modulation of voltage-controlled magnetic anisotropy (VCMA). In addition to demonstrating theprinciple of VCMA synchronization through micromagnetic simulations, we also quantify the impacts of current den-sity, skyrmion velocity, and anisotropy barrier height on skyrmion motion. Further micromagnetic results demonstratethe feasibility of cascaded logic circuits in which VCMA synchronizers enable clocking and pipelining, illustrating afeasible pathway toward energy-efficient large-scale computing systems based on magnetic skyrmions.
The polarization of the spin current pumped by a precessing ferromagnet into an adjacent normal metal has a constant component parallel to the precession axis and a rotating one normal to the magnetization. The former component is now routinely detected in the form of a DC voltage induced by the inverse spin Hall effect (ISHE). Here we compute AC-ISHE voltages much larger than the DC signals for various material combinations and discuss optimal conditions to observe the effect. Including the backflow of spins is essential for distilling parameters such as the spin Hall angle from ISHE-detected spin pumping experiments.
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