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Register a new userAn integrated low-voltage broadband lithium niobate phase modulator
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Electro-optic phase modulators are critical components in modern communication, microwave photonic, and quantum photonic systems. Important for these applications is to achieve modulators with low half-wave voltage at high frequencies. Here we demonstrate an integrated phase modulator, based on a thin-film lithium niobate platform, that simultaneously features small on-chip loss (~ 1 dB) and low half-wave voltage over a large spectral range (3.5 - 4.5 V at 5 - 40 GHz). By driving the modulator with a strong 30-GHz microwave signal corresponding to around four half-wave voltages, we generate an optical frequency comb consisting of over 40 sidebands spanning 10 nm in the telecom L-band. The high electro-optic performance combined with the high RF power-handling ability (3.1 W) of our integrated phase modulator are crucial for future photonics and microwave systems.
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Thin-film lithium niobate (LN) photonic integrated circuits (PICs) could enable ultrahigh performance in electro-optic and nonlinear optical devices. To date, realizations have been limited to chip-scale proof-of-concepts. Here we demonstrate monolithic LN PICs fabricated on 4- and 6-inch wafers with deep ultraviolet lithography and show smooth and uniform etching, achieving 0.27 dB/cm optical propagation loss on wafer-scale. Our results show that LN PICs are fundamentally scalable and can be highly cost-effective.
Electro-optic modulators with low voltage and large bandwidth are crucial for both analog and digital communications. Recently, thin-film lithium niobate modulators have enable dramatic performance improvements by reducing the required modulation voltage while maintaining high bandwidths. However, the reduced electrode gaps in such modulators leads to significantly higher microwave losses, which limit electro-optic performance at high frequencies. Here we overcome this limitation and achieve a record combination of low RF half-wave voltage of 1.3 V while maintaining electro-optic response with 1.8-dB roll-off at 50 GHz. This demonstration represents a significant improvement in voltage-bandwidth limit, one that is comparable to that achieved when switching from legacy bulk to thin-film lithium niobate modulators. Leveraging the low-loss electrode geometry, we show that sub-volt modulators with $>$ 100 GHz bandwidth can be enabled.
Integrated lithium niobate (LN) photonic circuits have recently emerged as a promising candidate for advanced photonic functions such as high-speed modulation, nonlinear frequency conversion and frequency comb generation. For practical applications, optical interfaces that feature low fiber-to-chip coupling losses are essential. So far, the fiber-to-chip loss (commonly > 10 dB) dominates the total insertion losses of typical LN photonic integrated circuits, where on-chip propagation losses can be as low as 0.03 - 0.1 dB/cm. Here we experimentally demonstrate a low-loss mode size converter for coupling between a standard lensed fiber and sub-micrometer LN rib waveguides. The coupler consists of two inverse tapers that convert the small optical mode of a rib waveguide into a symmetric guided mode of a LN nanowire, featuring a larger mode area matched to that of a tapered optical fiber. The measured fiber-to-chip coupling loss is lower than 1.7 dB/facet with high fabrication tolerance and repeatability. Our results open door for practical integrated LN photonic circuits efficiently interfaced with optical fibers.
Integrated electrical and photonic circuits (PIC) operating at cryogenic temperatures are fundamental building blocks required to achieve scalable quantum computing, and cryogenic computing technologies. Optical interconnects offer better performance and thermal insulation than electrical wires and are imperative for true quantum communication. Silicon PICs have matured for room temperature applications but their cryogenic performance is limited by the absence of efficient low temperature electro-optic (EO) modulation. While detectors and lasers perform better at low temperature, cryogenic optical switching remains an unsolved challenge. Here we demonstrate EO switching and modulation from room temperature down to 4 K by using the Pockels effect in integrated barium titanate (BaTiO3)-based devices. We report the nonlinear optical (NLO) properties of BaTiO3 in a temperature range which has previously not been explored, showing an effective Pockels coefficient of 200 pm/V at 4 K. We demonstrate the largest EO bandwidth (30 GHz) of any cryogenic switch to date, ultra-low-power tuning which is 10^9 times more efficient than thermal tuning, and high-speed data modulation at 20 Gbps. Our results demonstrate a missing component for cryogenic PICs. It removes major roadblocks for the realisation of novel cryogenic-compatible systems in the field of quantum computing and supercomputing, and for interfacing those systems with the real world at room-temperature.
Modern advanced photonic integrated circuits require dense integration of high-speed electro-optic functional elements on a compact chip that consumes only moderate power. Energy efficiency, operation speed, and device dimension are thus crucial metrics underlying almost all current developments of photonic signal processing units. Recently, thin-film lithium niobate (LN) emerges as a promising platform for photonic integrated circuits. Here we make an important step towards miniaturizing functional components on this platform, reporting probably the smallest high-speed LN electro-optic modulators, based upon photonic crystal nanobeam resonators. The devices exhibit a significant tuning efficiency up to 1.98 GHz/V, a broad modulation bandwidth of 17.5 GHz, while with a tiny electro-optic modal volume of only 0.58 $mu {rm m}^3$. The modulators enable efficient electro-optic driving of high-Q photonic cavity modes in both adiabatic and non-adiabatic regimes, and allow us to achieve electro-optic switching at 11 Gb/s with a bit-switching energy as low as 22 fJ. The demonstration of energy efficient and high-speed electro-optic modulation at the wavelength scale paves a crucial foundation for realizing large-scale LN photonic integrated circuits that are of immense importance for broad applications in data communication, microwave photonics, and quantum photonics.
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