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Register a new userStrongly Enhanced Gilbert Damping in 3d Transition Metal Ferromagnet Monolayers in Contact with Topological Insulator Bi2Se3
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Engineering Gilbert damping of ferromagnetic metal films is of great importance to exploit and design spintronic devices that are operated with an ultrahigh speed. Based on scattering theory of Gilbert damping, we extend the torque method originally used in studies of magnetocrystalline anisotropy to theoretically determine Gilbert dampings of ferromagnetic metals. This method is utilized to investigate Gilbert dampings of 3d transition metal ferromagnet iron, cobalt and nickel monolayers that are contacted by the prototypical topological insulator Bi2Se3. Amazingly, we find that their Gilbert dampings are strongly enhanced by about one order in magnitude, compared with dampings of their bulks and free-standing monolayers, owing to the strong spin-orbit coupling of Bi2Se3. Our work provides an attractive route to tailoring Gilbert damping of ferromagnetic metallic films by putting them in contact with topological insulators.
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A novel approach to reduce bulk conductance by the use of short period superlattices (SL) of two alternating topological insulator layers is presented. Evidence for a superlattice gap enhancement (SGE) was obtained from the observed reduction of bulk background doping by more than one order of magnitude, from 1.2x1020 cm-3 to 8.5x1018 cm-3 as the period of Bi2Se3/Sb2Te3 SLs is decreased from 12 nm to 5 nm, respectively. Tight binding calculations show that in the very thin period regime, a significant SGE can be achieved by the appropriate choice of materials. The ultrathin SL of alternating Bi2Se3 and Sb2Te3 layers behaves as a new designer material with a bulk bandgap as much as 60% larger than the bandgap of the constituent layer with the largest bandgap, while retaining topological surface features. Analysis of the weak antilocalization (WAL) cusp evident in the low temperature magneto-conductance of a very thin period SL sample grown confirms that the top and bottom surfaces of the SL structure behave as Dirac surface states. This approach represents a promising and yet to be explored platform for building truly insulating bulk TIs.
We report on time-resolved ultrafast optical spectroscopy study of the topological insulator (TI) Bi$_2$Se$_3$. We unravel that a net spin polarization can not only be generated using circularly polarized light via interband transitions between topological surface states (SSs), but also via transitions between SSs and bulk states. Our experiment demonstrates that tuning photon energy or temperature can essentially allow for photoexcitation of spin-polarized electrons to unoccupied topological SSs with two distinct spin relaxation times ($sim$25 fs and $sim$300 fs), depending on the coupling between SSs and bulk states. The intrinsic mechanism leading to such distinctive spin dynamics is the scattering in SSs and bulk states which is dominated by $E_g^2$ and $A_{1g}^1$ phonon modes, respectively. These findings are suggestive of novel ways to manipulate the photoinduced coherent spins in TIs.
The nonlinear Hall effect due to Berry curvature dipole (BCD) induces frequency doubling, which was recently observed in time-reversal-invariant materials. Here we report novel electric frequency doubling in the absence of BCD on a surface of the topological insulator Bi2Se3 under zero magnetic field. We observe that the frequency-doubling voltage transverse to the applied ac current shows a threefold rotational symmetry, whereas it forbids BCD. One of the mechanisms compatible with the symmetry is skew scattering, arising from the inherent chirality of the topological surface state. We introduce the Berry curvature triple, a high-order moment of the Berry curvature, to explain skew scattering under the threefold rotational symmetry. Our work paves the way to obtain a giant second-order nonlinear electric effect in high mobility quantum materials, as the skew scattering surpasses other mechanisms in the clean limit.
Using a formulation of first-principles scattering theory that includes disorder and spin-orbit coupling on an equal footing, we calculate the resistivity $rho$, spin flip diffusion length $l_{sf}$ and the Gilbert damping parameter $alpha$ for Ni$_{1-x}$Fe$_x$ substitutional alloys as a function of $x$. For the technologically important Ni$_{80}$Fe$_{20}$ alloy, permalloy, we calculate values of $rho = 3.5 pm 0.15$ $mu$Ohm-cm, $l_{sf}=5.5 pm 0.3$ nm, and $alpha= 0.0046 pm 0.0001$ compared to experimental low-temperature values in the range $4.2-4.8$ $mu$Ohm-cm for $rho$, $5.0-6.0$ nm for $l_{sf}$, and $0.004-0.013$ for $alpha$ indicating that the theoretical formalism captures the most important contributions to these parameters.
We perform photoluminescence experiments at 4K on two different transition metal diselenide monolayers, namely MoSe2 and WSe2 in magnetic fields $B_z$ up to 9T applied perpendicular to the sample plane. In MoSe2 monolayers the valley polarization of the neutral and the charged exciton (trion) can be tuned by the magnetic field, independent of the excitation laser polarization. In the investigated WSe2 monolayer sample the evolution of the trion valley polarization depends both on the applied magnetic field and the excitation laser helicity, while the neutral exciton valley polarization depends only on the latter. Remarkably we observe a reversal of the sign of the trion polarization between WSe2 and MoSe2. For both systems we observe a clear Zeeman splitting for the neutral exciton and the trion of about $pm2$meV at $B_zmp9$T. The extracted Land{e}-factors for both exciton complexes in both materials are $gapprox -4$.
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