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Register a new userPhotonic thermal conduction by infrared plasmonic resonators in semiconductor nanowires
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Photons typically do not contribute to thermal transport within a solid due to their low energy density and tendency to be quickly absorbed. We propose a practical material system - infrared plasmonic resonators embedded in a semiconductor nanowire - that leverages near-field electromagnetic coupling to achieve photonic thermal transport comparable to the electronic and phononic contributions. We analytically show photonic thermal conductivities up to about 1 W m-1 K-1 for 10 nm diameter Si and InAs nanowires containing repeated resonators at 500 K. The nanowire system outperforms plasmonic particles in isotropic environments and presents a pathway for photonic thermal transport to exceed that of phonons and electrons.
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Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here, we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor which enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices.
Doping is a common route to reducing nanowire transistor on-resistance but has limits. High doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of sub-threshold swing and contact resistance that surpasses the best existing p-type nanowire MOSFETs. Our sub-threshold swing of 75 mV/dec is within 25% of the room-temperature thermal limit and comparable with n-InP and n-GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.
Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunneling rates, the hallmark of semiconductor devices. One particularly exciting application is the realization of topological superconductivity as a basis for quantum information processing. Proposals in this direction based on proximity effect in semiconductor nanowires are appealing because the key ingredients are currently in hand. However, previous instances of proximitized semiconductors show significant tunneling conductance below the superconducting gap, suggesting a continuum of subgap states---a situation that nullifies topological protection. Here, we report a hard superconducting gap induced by proximity effect in a semiconductor, using epitaxial Al-InAs superconductor-semiconductor nanowires. The hard gap, along with favorable material properties and gate-tunability, makes this new hybrid system attractive for a number of applications, as well as fundamental studies of mesoscopic superconductivity.
Kitaev chain is a theoretical model of a one-dimensional topological superconductor with Majorana zero modes at the two ends of the chain. With the goal of emulating this model, we build a chain of three quantum dots in a semiconductor nanowire. We observe Andreev bound states in each of the three dots and study their magnetic field and gate voltage dependence. Theory indicates that triple dot states acquire Majorana polarization when Andreev states in all three dots reach zero energy in a narrow range of magnetic field. In our device Andreev states in one of the dots reach zero energy at a lower field than in other two, placing the Majorana regime out of reach. Devices with greater uniformity or with independent control over superconductor-semiconductor coupling should can realize the Kitaev chain with high yield. Due to its overall tunability and design flexibility the quantum dot system remains promising for quantum simulation of interesting models and in particular for modular topological quantum devices.
In this paper we solve the Cattaneo-Vernotte Equation for a periodic heterostructure made of alternate layers of different materials. The solutions describe thermal waves traveling in a periodic system, and it allows us to introduce the concept of thermal crystals. We show that the dispersion relation shows the characteristics of a band-structure, however the corresponding Bloch wave vector is always complex corresponding to pseudo-bands, unlike what happens in photonic or acoustic crystals. In this context, we also discuss the use of the Floquet-Bloch theorem for thermal waves. The case of finite layered structures is also analyzed showing the possibility of changing the temperature and heat flux by introducing defects opening the possibility of thermal management through the pseudo-band structure.
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