Excitonic stimulated emission provides a promising mechanism and route to achieve low-threshold semiconductor lasers for micro-nano optoelectronic integrations. However, excitonic stimulated emission from quantum structure-free semiconductors has rarely been realised at room temperature due to the phase transition between excitonic and electron-hole plasma states. Herein, we show that through trap-state and band-edge engineering, bound exciton states can be stabilised within the hybrid lead bromide perovskite. Under modest pumping conditions, these states enable stimulated emission behaviour that exhibits a low threshold carrier density of only 1.6*1017 cm-3, as well as a high peak gain coefficient of ~1300 cm-1. This is the first time that bound exciton stimulated emission has been realised at room temperature from a quantum structure-free semiconductor. Not only does this open up new research horizons for perovskite materials, but also it has important implications for semiconductor excitonic physics and the development of next-generation optoelectronic applications.
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