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Register a new userImproving Performance of Organic Photodetectors based on Trap Assisted Photomultiplication through Adjusting Photogenerated Carrier Distributions
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Organic photodetectors (OPDs) based on trap-assisted photomultiplication (PM) effect with external quantum efficiency (EQE) far exceeding 100% are quite appealing for achieving highly sensitive photodetection. A classic structure of PM-type OPDs is based on the active layer of P3HT:PC70BM with the weight ratio of 100:1, in which PC70BM forms islands and supply bulk electron traps for inducing strong interfacial band bending and thus hole tunneling from the Al electrode. In this paper, aiming for optimizing the PM effect, we study the photogenerated carrier distribution by tuning thickness of the active layer (P3HT:PC70BM). The combination effect of both the exciton generation and exciton dissociation processes affects the photogenerated carrier distribution, which ultimately determines the PM performances of OPDs. On the one hand, simulation reveals that the thinner the active layer, the stronger exciton generation near the Al electrode. On the other hand, the photoluminescence and surface morphology studies reflect that the active layer with thickness of 230 nm has the smooth surface and produces the highest exciton dissociation rate. The two effects result in the OPD with a 205 nm thick active layer has the champion EQE (105569%) and photoresponsivity (344 A/W), corresponding to an enhancement of 330% with respect to the OPD with a 325 nm thick active layer. Ascribed to the trade off of EQE and dark current, the detectivity performs differently at different wavelength ranges. At short wavelength range, the detectivity reaches the highest when the active layer is 205 nm thick, while the highest detectivity at long wavelength range is produced by the thickest active layer. Our work contributes to developing low cost organic photodetectors for detecting weak light signals.
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Two dimensional (2D) materials exhibit superior properties in electronic and optoelectronic fields. The wide demand for high performance optoelectronic devices promotes the exploration of diversified 2D materials. Recently, 2D covalent organic frameworks (COFs) have emerged as next-generation layered materials with predesigned pi electronic skeletons and highly ordered topological structures, which are promising for tailoring their optoelectronic properties. However, COFs are usually produced as solid powders due to anisotropic growth, making them unreliable to integrate into devices. Here, by selecting tetraphenylethylene (TPE) monomers with photoelectric activity, we designed and synthesized photosensitive 2D COFs with highly ordered topologies and grew 2D COFs in situ on graphene to form well ordered COF graphene heterostructures. Ultrasensitive photodetectors were successfully fabricated with the COFETBC TAPT graphene heterostructure and exhibited an excellent overall performance. Moreover, due to the high surface area and the polarity selectivity of COFs, the photosensing properties of the photodetectors can be reversibly regulated by specific target molecules. Our research provides new strategies for building advanced functional devices with programmable material structures and diversified regulation methods, paving the way for a generation of high performance applications in optoelectronics and many other fields.
A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 {mu}m is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the light absorption in graphene is enhanced while the metal absorption loss is reduced simultaneously, which helps greatly improve the responsivity as well as shorten the absorption region for achieving fast responses. Furthermore, metal-graphene-metal sandwiched electrodes are introduced to reduce the metal-graphene contact resistance, which is also helpful for improving the response speed. When the photodetector operates at 2 {mu}m, the measured 3dB-bandwidth is >20 GHz (which is limited by the experimental setup) while the 3dB-bandwith calculated from the equivalent circuit with the parameters extracted from the measured S11 is as high as ~100 GHz. To the best of our knowledge, it is the first time to report the waveguide photodetector at 2 {mu}m with a 3dB-bandwidth over 20 GHz. Besides, the present photodetectors also work very well at 1.55 {mu}m. The measured responsivity is about 0.4 A/W under a bias voltage of -0.3 V for an optical power of 0.16 mW, while the measured 3dB-bandwidth is over 40 GHz (limited by the test setup) and the 3 dB-bandwidth estimated from the equivalent circuit is also as high as ~100 GHz, which is one of the best results reported for silicon-graphene photodetectors at 1.55 {mu}m.
The first waveguide coupled phosphide-based UTC photodiodes grown by Solid Source Molecular Beam Epitaxy (SSMBE) are reported in this paper. Metal Organic Vapour Phase Epitaxy (MOVPE) and Gas Source MBE (GSMBE) have long been the predominant growth techniques for the production of high quality InGaAsP materials. The use of SSMBE overcomes the major issue associated with the unintentional diffusion of zinc in MOVPE and gives the benefit of the superior control provided by MBE growth techniques without the costs and the risks of handling toxic gases of GSMBE. The UTC epitaxial structure contains a 300 nm n-InP collection layer and a 300 nm n++-InGaAsP waveguide layer. UTC-PDs integrated with Coplanar Waveguides (CPW) exhibit 3 dB bandwidth greater than 65 GHz and output RF power of 1.1 dBm at 100 GHz. We also demonstrate accurate prediction of the absolute level of power radiated by our antenna integrated UTCs, between 200 GHz and 260 GHz, using 3d full-wave modelling and taking the UTC-to-antenna impedance match into account. Further, we present the first optical 3d full-wave modelling of waveguide UTCs, which provides a detailed insight into the coupling between a lensed optical fibre and the UTC chip.
Photodetectors are key optoelectronic building blocks performing the essential optical-to-electrical signal conversion, and unlike solar cells, operate at a specific wavelength and at high signal or sensory speeds. Towards achieving high detector performance, device physics, however, places a fundamental limit of the achievable detector sensitivity, such as responsivity and gain, when simultaneously aimed to increasing the detectors temporal response, speed, known as the gain-bandwidth product (GBP). While detectors GBP has been increasing in recent years, the average GBP is still relatively modest (~10^6-10^7 Hz-A/W). Here we discuss photodetector performance limits and opportunities based on arguments from scaling length theory relating photocarrier channel length, mobility, electrical resistance with optical waveguide mode constrains. We show that short-channel detectors are synergistic with slot-waveguide approaches, and when combined, offer a high-degree of detector design synergy especially for the class of nanometer-thin materials. Indeed, we find that two dimensional material-based detectors are not limited by their low mobility and can, in principle, allow for 100 GHz fast response rates. However, contact resistance is still a challenge for such thin materials, a research topic that is still not addressed yet. An interim solution is to utilize heterojunction approaches for functionality separation. Nonetheless, atomistically- and nanometer-thin materials used in such next-generation scaling length theory based detectors also demand high material quality and monolithic integration strategies into photonic circuits including foundry-near processes. As it stands, this letter aims to guide the community if achieving the next generation photodetectors aiming for a performance target of GBP = 10^12 Hz-A/W.
Modern fiber-optic coherent communications employ advanced spectrally-efficient modulation formats that require sophisticated narrow linewidth local oscillators (LOs) and complex digital signal processing (DSP). Here, we establish a novel approach to carrier recovery harnessing large-gain stimulated Brillouin scattering (SBS) on a photonic chip for up to 116.82 Gbit/sec self-coherent optical signals, eliminating the need for a separate LO. In contrast to SBS processing on-fiber, our solution provides phase and polarization stability while the narrow SBS linewidth allows for a record-breaking small guardband of ~265 MHz, resulting in higher spectral-efficiency than benchmark self-coherent schemes. This approach reveals comparable performance to state-of-the-art coherent optical receivers without requiring advanced DSP. Our demonstration develops a low-noise and frequency-preserving filter that synchronously regenerates a low-power narrowband optical tone that could relax the requirements on very-high-order modulation signaling and be useful in long-baseline interferometry for precision optical timing or reconstructing a reference tone for quantum-state measurements.
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