No Arabic abstract
We report on a novel approach to synthesize cubic-phase fast ionic conducting garnet-type solid state electrolytes based on Bi doped Li7La3Zr2O12 (LLZO). Bi aliovalent substitution into LLZO utilizing the Pechini processing method is successfully employed to synthesize Li7-xLa3Zr2-xBixO12 compounds. Ionic conductivities up to 2.0 x 10-4 S/cm are achieved in structures not fully densified. Cubic phase Li6La3ZrBiO12 powders are generated in the temperature range from 650 {deg}C to 900 {deg}C in air. In contrast, in the absence of Bi and under identical synthesis conditions, the cubic garnet phase of Li7La3Zr2O12 is not formed below 700 {deg}C while a transformation to the tetragonal phase is observed at 900 {deg}C for the un-doped compound. The critical role of Bi in lowering the formation temperature of the garnet cubic phase and the improvements in ionic conductivity is investigated in this work through microstructural studies and AC impedance measurements. We ascribe the effect of Bi doping in achieving these remarkable improvements to significant enhancements at lower temperatures in the kinetics of the solid-state reaction resulting in explosive grain growth and densification of the garnet. Moreover, XAS is utilized to identify the specific atomic site where Bi is incorporated in the LLZO garnet crystalline structure.
The low-temperature thermal conductivity in polycrystalline graphene is theoretically studied. The contributions from three branches of acoustic phonons are calculated by taking into account scattering on sample borders, point defects and grain boundaries. Phonon scattering due to sample borders and grain boundaries is shown to result in a $T^{alpha}$-behaviour in the thermal conductivity where $alpha$ varies between 1 and 2. This behaviour is found to be more pronounced for nanosized grain boundaries. PACS: 65.80.Ck, 81.05.ue, 73.43.Cd
This article presents studies on low-field electrical conduction in the range 4-to-300 K for a ultrafast material: InGaAs:ErAs grown by molecular beam epitaxy. The unique properties include nano-scale ErAs crystallines in host semiconductor, a deep Fermi level, and picosecond ultrafast photocarrier recombination. As the temperature drops, the conduction mechanisms are in the sequence of thermal activation, nearest-neighbor hopping, variable-range hopping, and Anderson localization. In the low-temperature limit, finite-conductivity metallic behavior, not insulating, was observed. This unusual conduction behavior is explained with the Abrahams scaling theory.
The synthesis of transition metal dichalcogenides (TMDs) has been a primary focus for 2D nanomaterial research over the last 10 years, however, only a small fraction of this research has been concentrated on transition metal ditellurides. In particular, nanoscale platinum ditelluride (PtTe2) has rarely been investigated, despite its potential applications in catalysis, photonics and spintronics. Of the reports published, the majority examine mechanically-exfoliated flakes from chemical vapor transport (CVT) grown crystals. While this production method is ideal for fundamental studies, it is very resource intensive therefore rendering this process unsuitable for large scale applications. In this report, the synthesis of thin films of PtTe2 through the reaction of solid-phase precursor films is described. This offers a production method for large-area, thickness-controlled PtTe2, suitable for a range of applications. These polycrystalline PtTe2 films were grown at temperatures as low as 450 degC, significantly below the typical temperatures used in the CVT synthesis methods. To investigate their potential applicability, these films were examined as electrocatalysts for the hydrogen evolution reaction (HER) and oxygen reduction reaction (ORR). The films showed promising catalytic behavior, however, the PtTe2 was found to undergo chemical transformation to a substoichiometric chalcogenide compound under ORR conditions. This study shows while PtTe2 is stable and highly useful for HER, this property does not apply to ORR, which undergoes a fundamentally different mechanism. This study broadens our knowledge of the electrocatalysis of TMDs.
Design novel solid oxide electrolyte with enhanced ionic conductivity forms one of the Holy Grails in the field of materials science due to its great potential for wide range of energy applications. Conventional solid oxide electrolyte typically requires elevated temperature to activate the ionic transportation, while it has been increasing research interests to reduce the operating temperature due to the associated scientific and technological importance. Here, we report a conceptually new solid oxide electrolyte, HSrCoO2.5, which shows an exceptional enhanced proton conductivity at low temperature region (from room temperature to 140 oC). Combining both the experimental results and corresponding first-principles calculations, we attribute these intriguing properties to the extremely-high proton concentration as well as the well-ordered oxygen vacancy channels inherited from the novel crystalline structure of HSrCoO2.5. This result provides a new strategy to design novel solid oxide electrolyte with excellent proton conductivity for wide ranges of energy-related applications.
Metallic transition metal dichalcogenides (TMDs) have exhibited various exotic physical properties and hold the promise of novel optoelectronic and topological devices applications. However, the synthesis of metallic TMDs is based on gas-phase methods and requires high temperature condition. As an alternative to the gas-phase synthetic approach, lower temperature eutectic liquid-phase synthesis presents a very promising approach with the potential for larger-scale and controllable growth of high-quality thin metallic TMDs single crystals. Herein, we report the first realization of low-temperature eutectic liquid-phase synthesis of type-II Dirac semimetal PtTe2 single crystals with thickness ranging from 2 to 200 nm. The electrical measurement of synthesized PtTe2 reveals a record-high conductivity of as high as 3.3*106 S/m at room temperature. Besides, we experimentally identify the weak antilocalization behavior in the type-II Dirac semimetal PtTe2 for the first time. Furthermore, we develop a simple and general strategy to obtain atomically-thin PtTe2 crystal by thinning as-synthesized bulk samples, which can still retain highly crystalline and exhibits excellent electric conductivity. Our results of controllable and scalable low-temperature eutectic liquid-phase synthesis and layer-by-layer thinning of high-quality thin PtTe2 single crystals offer a simple and general approach for obtaining different thickness metallic TMDs with high-melting point transition metal.