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Register a new userQuantum interference of electromechanically stabilized emitters in nanophotonic devices
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Added by
Bartholomeus Machielse
Publication date
2019
fields
Physics
and research's language is
English
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Photon-mediated coupling between distant matter qubits may enable secure communication over long distances, the implementation of distributed quantum computing schemes, and the exploration of new regimes of many-body quantum dynamics. Nanophotonic devices coupled to solid-state quantum emitters represent a promising approach towards realization of these goals, as they combine strong light-matter interaction and high photon collection efficiencies. However, the scalability of these approaches is limited by the frequency mismatch between solid-state emitters and the instability of their optical transitions. Here we present a nano-electromechanical platform for stabilization and tuning of optical transitions of silicon-vacancy (SiV) color centers in diamond nanophotonic devices by dynamically controlling their strain environments. This strain-based tuning scheme has sufficient range and bandwidth to alleviate the spectral mismatch between individual SiV centers. Using strain, we ensure overlap between color center optical transitions and observe an entangled superradiant state by measuring correlations of photons collected from the diamond waveguide. This platform for tuning spectrally stable color centers in nanophotonic waveguides and resonators constitutes an important step towards a scalable quantum network.
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Hexagonal boron nitride (hBN) is gaining interest for potential applications in integrated quantum nanophotonics. Yet, to establish hBN as an integrated photonic platform several cornerstones must be established, including the integration and coupling of quantum emitters to photonic waveguides. Supported by simulations, we study the approach of monolithic integration, which is expected to have coupling efficiencies that are 4 times higher than those of a conventional hybrid stacking strategy. We then demonstrate the fabrication of such devices from hBN and showcase the successful integration of hBN single photon emitters with a monolithic waveguide. We demonstrate coupling of single photons from the quantum emitters to the waveguide modes and on-chip detection. Our results build a general framework for monolithically integrated hBN single photon emitter and will facilitate future works towards on-chip integrated quantum photonics with hBN.
Color centers in solids are the fundamental constituents of a plethora of applications such as lasers, light emitting diodes and sensors, as well as the foundation of advanced quantum information and communication technologies. Their photoluminescence properties are usually studied under Stokes excitation, in which the emitted photons are at a lower energy than the excitation ones. In this work, we explore the opposite Anti-Stokes process, where excitation is performed with lower energy photons. We report that the process is sufficiently efficient to excite even a single quantum system, namely the germanium-vacancy center in diamond. Consequently, we leverage the temperature-dependent, phonon-assisted mechanism to realize an all-optical nanoscale thermometry scheme that outperforms any homologous optical method employed to date. Our results frame a promising approach for exploring fundamental light-matter interactions in isolated quantum systems, and harness it towards the realization of practical nanoscale thermometry and sensing.
Efficient on-chip integration of single-photon emitters imposes a major bottleneck for applications of photonic integrated circuits in quantum technologies. Resonantly excited solid-state emitters are emerging as near-optimal quantum light sources, if not for the lack of scalability of current devices. Current integration approaches rely on cost-inefficient individual emitter placement in photonic integrated circuits, rendering applications impossible. A promising scalable platform is based on two-dimensional (2D) semiconductors. However, resonant excitation and single-photon emission of waveguide-coupled 2D emitters have proven to be elusive. Here, we show a scalable approach using a silicon nitride photonic waveguide to simultaneously strain-localize single-photon emitters from a tungsten diselenide (WSe2) monolayer and to couple them into a waveguide mode. We demonstrate the guiding of single photons in the photonic circuit by measuring second-order autocorrelation of g$^{(2)}(0)=0.150pm0.093$ and perform on-chip resonant excitation yielding a g$^{(2)}(0)=0.377pm0.081$. Our results are an important step to enable coherent control of quantum states and multiplexing of high-quality single photons in a scalable photonic quantum circuit.
Single-photon emitters are essential for enabling several emerging applications in quantum information technology, quantum sensing and quantum communication. Scalable photonic platforms capable of hosting intrinsic or directly embedded sources of single-photon emission are of particular interest for the realization of integrated quantum photonic circuits. Here, we report on the first-time observation of room-temperature single-photon emitters in silicon nitride (SiN) films grown on silicon dioxide substrates. As SiN has recently emerged as one of the most promising materials for integrated quantum photonics, the proposed platform is suitable for scalable fabrication of quantum on-chip devices. Photophysical analysis reveals bright (>$10^5$ counts/s), stable, linearly polarized, and pure quantum emitters in SiN films with the value of the second-order autocorrelation function at zero time delay $g^{(2)}(0)$ below 0.2 at room temperatures. The emission is suggested to originate from a specific defect center in silicon nitride due to the narrow wavelength distribution of the observed luminescence peak. Single-photon emitters in silicon nitride have the potential to enable direct, scalable and low-loss integration of quantum light sources with the well-established photonic on-chip platform.
We review recent advances towards the realization of quantum networks based on atom-like solid-state quantum emitters coupled to nanophotonic devices. Specifically, we focus on experiments involving the negatively charged silicon-vacancy color center in diamond. These emitters combine homogeneous, coherent optical transitions and a long-lived electronic spin quantum memory. We discuss optical and spin properties of this system at cryogenic temperatures and describe experiments where silicon-vacancy centers are coupled to nanophotonic devices. Finally, we discuss experiments demonstrating quantum nonlinearities at the single-photon level and two-emitter entanglement in a single nanophotonic device.
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