Current-controlled (also known as S-type) negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high-density memristors integration. However, the experimental realization of S-type NDR based on conventional mechanisms poses demanding requirements on materials, which greatly limits their potential applications. Here, we experimentally identify that semiconducting transition metal dichalcogenides (TMDs) can host a bipolar S-type NDR devices. Theoretical simulations indicate that the origin of the NDR in these devices arises from a thermal feedback mechanism. Furthermore, we demonstrate the potential applications of TMDs based S-type NDR device in signal processing and neuromorphic electronics.
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