No Arabic abstract
High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance of two cryogenic amplification circuits: a current-biased heterojunction bipolar transistor circuit (CB-HBT), and an AC-coupled HBT circuit (AC-HBT). Both circuits are mounted on the mixing-chamber stage of a dilution refrigerator and are connected to silicon metal oxide semiconductor (Si-MOS) quantum dot devices on a printed circuit board (PCB). The power dissipated by the CB-HBT ranges from 0.1 to 1 {mu}W whereas the power of the AC-HBT ranges from 1 to 20 {mu}W. Referred to the input, the noise spectral density is low for both circuits, in the 15 to 30 fA/$sqrt{textrm{Hz}}$ range. The charge sensitivity for the CB-HBT and AC-HBT is 330 {mu}e/$sqrt{textrm{Hz}}$ and 400 {mu}e/$sqrt{textrm{Hz}}$, respectively. For the single-shot readout performed, less than 10 {mu}s is required for both circuits to achieve bit error rates below $10^{-3}$, which is a putative threshold for quantum error correction.
We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar transistor based on a lateral heterostructure of transition metal dichalcogenides. The device is intrinsically thinner than a Field Effect Transistor because it does not need a top or bottom gate, since transport is controlled by the electrochemical potential of the base electrode. As typical of bipolar transistors, the collector current undergoes a tenfold increase for each 60 mV increase of the base voltage over several orders of magnitude at room temperature, without sophisticated optimization of the electrostatics. We present a detailed investigation based on self-consistent simulations of electrostatics and quantum transport for both electron and holes of a pnp device using MoS$_2$ for the 10-nm base and WSe$_2$ for emitter and collector. Our three-terminal device simulations confirm the working principle and a large current modulation I$_text{ON}$/I$_text{OFF}sim 10^8$ for $Delta V_{rm EB}=0.5$ V. Assuming ballistic transport, we are able to achieve a current gain $betasim$ 10$^4$ over several orders of magnitude of collector current and a cutoff frequency up to the THz range. Exploration of the rich world of bipolar nanoscale device concepts in 2D materials is promising for their potential applications in electronics and optoelectronics.
We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10-100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 {mu}W for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.
We report experimental observation of an unexpectedly large thermopower in mesoscopic two-dimensional (2D) electron systems on GaAs/AlGaAs heterostructures at sub-Kelvin temperatures and zero magnetic field. Unlike conventional non-magnetic high-mobility 2D systems, the thermopower in our devices increases with decreasing temperature below 0.3 K, reaching values in excess of 100 $mu$V/K, thus exceeding the free electron estimate by more than two orders of magnitude. With support from a parallel independent study of the local density of states, we suggest such a phenomenon to be linked to intrinsic localized states and many-body spin correlations in the system.
Unwanted fluctuations over time, in short, noise, are detrimental to device performance, especially for quantum coherent circuits. Recent efforts have demonstrated routes to utilizing magnon systems for quantum technologies, which are based on interfacing single magnons to superconducting qubits. However, the coupling of several components often introduces additional noise to the system, degrading its coherence. Researching the temporal behavior can help to identify the underlying noise sources, which is a vital step in increasing coherence times and the hybrid device performance. Yet, the frequency noise of the ferromagnetic resonance (FMR) has so far been unexplored. Here, we investigate such FMR frequency fluctuations of a YIG sphere down to mK-temperatures, and find them independent of temperature and drive power. This suggests that the measured frequency noise in YIG is dominated by so far undetermined noise sources, which properties are not consistent with the conventional model of two-level systems, despite their effect on the sample linewidth. Moreover, the functional form of the FMR frequency noise power spectral density (PSD) cannot be described by a simple power law. By employing time-series analysis, we find a closed function for the PSD that fits our observations. Our results underline the necessity of coherence improvements to magnon systems for useful applications in quantum magnonics.
We investigate the basic charge and heat transport properties of charge neutral epigraphene at sub-kelvin temperatures, demonstrating nearly logarithmic dependence of electrical conductivity over more than two decades in temperature. Using graphenes sheet conductance as in-situ thermometer, we present a measurement of electron-phonon heat transport at mK temperatures and show that it obeys the $T^4$ dependence characteristic for clean two-dimensional conductor. Based on our measurement we predict the noise-equivalent power of $sim 10^{-22}~{rm W}/sqrt{{rm Hz}}$ of epigraphene bolometer at the low end of achievable temperatures.