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Register a new userTwo channel model for optical conductivity of high mobility organic crystals
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We show that the temperature dependence of conductivity of high mobility organic crystals Pentacene and Rubrene can be quantitatively described in the framework of the model where carriers are scattered by quenched local impurities and interact with phonons by Su-Schrieffer-Hegger (SSH) coupling. Within this model, we present approximation free results for mobility and optical conductivity obtained by world line Monte Carlo, which we generalize to the case of coupling both to phonons and impurities. We find fingerprints of carrier dynamics in these compounds which differ from conventional metals and show that the dynamics of carriers can be described as a superposition of a Drude term representing diffusive mobile particles and a Lorentz term associated with dynamics of localized charges.
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We report the growth of large single-crystals of Cu2MnAl, a ferromagnetic Heusler compound suitable for polarizing neutron monochromators, by means of optical floating zone under ultra-high vacuum compatible conditions. Unlike Bridgman or Czochralsky grown Cu2MnAl, our floating zone grown single-crystals show highly reproducible magnetic properties and an excellent crystal quality with a narrow and homogeneous mosaic spread as examined by neutron diffraction. An investigation of the polarizing properties in neutron scattering suggests a high polarization efficiency, limited by the relatively small sample dimensions studied. Our study identifies optical floating zone under ultra-high vacuum compatible conditions as a highly reproducible method to grow high-quality single-crystals of Cu2MnAl.
Two-dimensional atomic crystals are extensively studied in recent years due to their exciting physics and device applications. However, a molecular counterpart, with scalable processability and competitive device performance, is still challenging. Here, we demonstrate that high-quality few-layer dioctylbenzothienobenzothiophene molecular crystals can be grown on graphene or boron nitride substrate via van der Waals epitaxy, with precisely controlled thickness down to monolayer, large-area single crystal, low process temperature and patterning capability. The crystalline layers are atomically smooth and effectively decoupled from the substrate due to weak van der Waals interactions, affording a pristine interface for high-performance organic transistors. As a result, monolayer dioctylbenzothienobenzothiophene molecular crystal field-effect transistors on boron nitride show record-high carrier mobility up to 10cm2V-1s-1 and aggressively scaled saturation voltage around 1V. Our work unveils an exciting new class of two-dimensional molecular materials for electronic and optoelectronic applications.
We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields B=0-5T. The experimental data have been analyzed using the theory of interaction effects in the conductivity of disordered 2D systems. The parameters essential for comparison with the theory, such as the intervalley scattering time and valley splitting, have been measured or evaluated in independent experiments. The observed behavior of the conductivity, including its quasi-linear increase with decreasing T down to ~0.4K and its downturn at lower temperatures, is in agreement with the theory. The values of the Fermi- liquid parameter obtained from the comparison agree with the corresponding values extracted from the analysis of Shubnikov-de Haas oscillations based on the theory of magnetooscillations in interacting 2D systems.
Here, we report the magneto-conductivity (up to 14Tesla and down to 5K) analysis of Bi2Te3 single-crystal. A sharp magneto-conductivity (MC) rise (inverted v-type cusp) is observed near H=0 due to the weak antilocalization (WAL) effect, while a linear curve is observed at higher fields. We account for magneto-conductivity (MC) over the entire range of applied magnetic fields of up to 14Tesla and temperatures from 100K to 5K in a modified HLN modelling (addition of quadratic (BH2) through quantum and classical components involvement. The additional term BH2 reveals a gradual change of a (HLN parameter) from -0.421(6) to -0.216(1) as the temperature increases from 5 to 100K. The phase coherence length Lphi obtained from both conventional and modified modelling decreased with increasing temperature but remains more protracted than the mean free path (L) of electrons. It shows the quantum phase coherence effect dominates at high temperature.
We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High mobility conduction is observed at low deposition oxygen pressures (PO2 < 10^-5 mbar) and has a three-dimensional character. However, at higher PO2 the conduction is dramatically suppressed and nonmetallic behavior appears. Experimental data strongly support an interpretation of these properties based on the creation of oxygen vacancies in the SrTiO3 substrates during the growth of the LaAlO3 layer. When grown on SrTiO3 substrates at low PO2, other oxides generate the same high mobility as LaAlO3 films. This opens interesting prospects for all-oxide electronics.
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