Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userPump-probe Spectroscopy Study of Ultrafast Temperature Dynamics in Nanoporous Gold
219
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We explore the influence of the nanoporous structure on the thermal relaxation of electrons and holes excited by ultrashort laser pulses ($sim 7$ fs) in thin gold films. Plasmon decay into hot electron-hole pairs results in the generation of a Fermi-Dirac distribution thermalized at a temperature $T_{mathrm{e}}$ higher than the lattice temperature $T_{mathrm{l}}$. The relaxation times of the energy exchange between electrons and lattice, here measured by pump-probe spectroscopy, is slowed down by the nanoporous structure, resulting in much higher peak $T_{mathrm{e}}$ than for bulk gold films. The electron-phonon coupling constant and the Debye temperature are found to scale with the metal filling factor $f$ and a two-temperature model reproduces the data. The results open the way for electron temperature control in metals by engineering of the nanoporous geometry.
rate research
Read More
High-resolution angle-resolved photoemission spectroscopy and ultrafast optical pump-probe spectroscopy were used to study semimetallic 1T - TiTe2 quasiparticle dispersion and dynamics. A kink and a flat band, having the same energy scale and temperature-dependent behaviors along the G-M direction, were detected. Both manifested at low temperatures but blurred as temperature increased. The kink was formed by an electron-phonon coupling. And the localized flat band might be closely related to an electron-phonon coupling. Ultrafast optical spectroscopy identified multiple distinct time scales in the 10-300 K range. Quantitative analysis of the fastest decay process evidenced a significant lifetime temperature dependence at high temperatures, while this starts to change slowly below ~ 100 K where an anomalous Hall coefficient occurred. At low temperature, a coherent A1g phonon mode with a frequency of ~ 4.36 THz was extracted. Frequency temperature dependence suggests that phonon hardening occurs as temperature falls and anharmonic effects can explain it. Frequency fluence dependence indicates that the phonons soften as fluence increases.
We investigated the localized electronic properties of nanoporous gold films by using an ultra-high vacuum scanning tunneling microscope at low temperature (4.2 K). Second derivative scanning tunneling spectroscopy shows the plasmon peaks of the nanoporous gold films, which are excited by inelastic tunneling electrons. We propose that the nanorod model is appropriate for nanoporous gold studies at the nanometer-scale. These results are supported by a 3D electron tomography analysis and theoretical calculations of nanoporous gold with ellipsoid shape.
We report results from ultrafast two-color optical pump-probe spectroscopy on bulk $beta$-Ga$_2$O$_3$. A two-photon absorption scheme is used to photoexcite carriers with the pump pulse and free-carrier absorption of the probe pulse is used to record the subsequent dynamics of the photoexcited carriers. Our results are consistent with carrier recombination via defect-assisted processes. We also observe transient polarization-selective optical absorption of the probe pulse by defect states under nonequilibrium conditions. A rate equation model for electron and hole capture by defects is proposed and used to explain the data. Whereas the rate constants for electron capture by defects are found to be temperature-independent, they are measured to be strongly temperature-dependent for hole capture and point to a lattice deformation/relaxation process accompanying hole capture. Our results shed light on the mechanisms and rates associated with carrier capture by defects in $beta$-Ga$_2$O$_3$.
We investigate the valley related carrier dynamics in monolayer MoS2 using helicity resolved non-degenerate ultrafast pump-probe spectroscopy at the vicinity of the high-symmetry K point under the temperature down to 78 K. Monolayer MoS2 shows remarkable transient reflection signals, in stark contrast to bilayer and bulk MoS2 due to the enhancement of many-body effect at reduced dimensionality. The helicity resolved ultrafast time-resolved result shows that the valley polarization is preserved for only several ps before scattering process makes it undistinguishable. We suggest that the dynamical degradation of valley polarization is attributable primarily to the exciton trapping by defect states in the exfoliated MoS2 samples. Our experiment and a tight-binding model analysis also show that the perfect valley CD selectivity is fairly robust against disorder at the K point, but quickly decays from the high-symmetry point in the momentum space in the presence of disorder.
We investigated the photoexcited carrier dynamics in Si by using optical pump and terahertz probe spectroscopy in an energy range between 2 meV and 25 meV. The formation dynamics of excitons from unbound e-h pairs was studied through the emergence of the 1s-2p transition of excitons at 12 meV (3 THz). We revealed the thermalization mechanism of the photo-injected hot carriers (electrons and holes) in the low temperature lattice system by taking account of the interband and intraband scattering of carriers with acoustic and optical phonons. The overall cooling rate of electrons and holes was numerically calculated on the basis of a microscopic analysis of the phonon scattering processes, and the results well account for the experimentally observed carrier cooling dynamics. The long formation time of excitons in Si after the above-gap photoexcitation is reasonably accounted for by the thermalization process of photoexcited carriers.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
