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Register a new userNovel Chern insulators with half-metallic edge states
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The central target of spintronics research is to achieve flexible control of highly efficient and spin-polarized electronic currents. Based on first-principles calculations and k-p models, we demonstrate that Cu2S/MnSe heterostructures are a novel type of Chern insulators with half-metallic chiral edge states and a very high Fermi velocity (0.87 * 10^6 m/s). The full spin-polarization of the edge states is found to be robust against the tuning of the chemical potential. Unlike the mechanisms reported previously, this heterostructure has quadratic bands with a normal band order, that is, the p/d-like band is below the s-like band. Charge transfer between the Cu2S moiety and the substrate results in variation in the occupied bands, which together with spin-orbit coupling, triggers the appearance of the topological state in the system. These results imply that numerous ordinary semiconductors with normal band order may convert into Chern insulators with half-metallic chiral edge states through this mechanism, providing a strategy to find a rich variety of materials for dissipationless, 100% spin-polarized and high-speed spintronic devices.
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From first-principles calculations, we predict that transition metal (TM) atom doped silicon nanowires have a half-metallic ground state. They are insulators for one spin-direction, but show metallic properties for the opposite spin direction. At high coverage of TM atoms, ferromagnetic silicon nanowires become metallic for both spin-directions with high magnetic moment and may have also significant spin-polarization at the Fermi level. The spin-dependent electronic properties can be engineered by changing the type of dopant TM atoms, as well as the diameter of the nanowire. Present results are not only of scientific interest, but can also initiate new research on spintronic applications of silicon nanowires.
The density of non-quasiparticle states in the ferrimagnetic full-Heuslers Mn$_2$VAl alloy is calculated from first principles upon appropriate inclusion of correlations. In contrast to most half-metallic compounds, this material displays an energy gap in the majority-spin spectrum. For this situation, non-quasiparticle states are located below the Fermi level, and should be detectable by spin-polarized photoemission. This opens a new way to study many-body effects in spintronic-related materials.
We investigate the emergence of anti-ferromagnetic ordering and its effect on the helical edge states in a quantum spin Hall insulator, in the presence of strong Coulomb interaction. Using dynamical mean-field theory, we show that the breakdown of lattice translational symmetry favours the formation of magnetic ordering with non-trivial spatial modulation. The onset of a non-uniform magnetization enables the coexistence of spin-ordered and topologically non-trivial states. An unambiguous signature of the persistence of the topological bulk property is the survival of bona fide edge states. We show that the penetration of the magnetic order is accompanied by the progressive reconstruction of gapless states in sub-peripherals layers, redefining the actual topological boundary within the system.
Anomalous magnetic and electronic properties of the half-metallic ferromagnets (HMF) have been discussed. The general conception of the HMF electronic structure which take into account the most important correlation effects from electron-magnon interactions, in particular, the spin-polaron effects, is presented. Special attention is paid to the so called non-quasiparticle (NQP) or incoherent states which are present in the gap near the Fermi level and can give considerable contributions to thermodynamic and transport properties. Prospects of experimental observation of the NQP states in core-level spectroscopy is discussed. Special features of transport properties of the HMF which are connected with the absence of one-magnon spin-flip scattering processes are investigated. The temperature and magnetic field dependences of resistivity in various regimes are calculated. It is shown that the NQP states can give a dominate contribution to the temperature dependence of the impurity-induced resistivity and in the tunnel junction conductivity. First principle calculations of the NQP-states for the prototype half-metallic material NiMnSb within the local-density approximation plus dynamical mean field theory (LDA+DMFT) are presented.
Electronic and topological properties of MoS2 monolayers endowed with 3d transition metal (TM) adatoms (V-Fe) are explored by using ab initio methods and k.p models. Without the consideration of the Hubbard U interaction, the V, Cr, and Fe adatoms tend to locate on the top of the Mo atoms, while the most stable site for the Mn atom is at the hollow position of the Mo-S hexagon. After the Hubbard U is applied, the most stable sites of all the systems become the top of the Mo atoms. Chern insulators without band inversion are achieved in these systems. The V and Fe adsorption systems are the best candidates to produce the topological states. The k.p model calculations indicate that these topological states are determined by the TM magnetism, the C3v crystal field from the MoS2 substrate, and the TM atomic spin-orbit coupling (SOC). The special two-meron pseudospin texture is found to contribute to the topology. The apparent difference between the Berry curvatures for the V and Fe adsorption systems are also explored. Our results widen the understanding to the Chern insulators and are helpful for the applications of the MoS2 monolayers in the future electronics and spintronics.
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