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Domain wall-based spin-Hall nano-oscillators

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 Added by Katrin Schultheiss
 Publication date 2018
  fields Physics
and research's language is English




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In the last decade, two revolutionary concepts in nano magnetism emerged from research for storage technologies and advanced information processing. The first suggests the use of magnetic domain walls (DWs) in ferromagnetic nanowires to permanently store information in DW racetrack memories. The second proposes a hardware realisation of neuromorphic computing in nanomagnets using nonlinear magnetic oscillations in the GHz range. Both ideas originate from the transfer of angular momentum from conduction electrons to localised spins in ferromagnets, either to push data encoded in DWs along nanowires or to sustain magnetic oscillations in artificial neurones. Even though both concepts share a common ground, they live on very different time scales which rendered them incompatible so far. Here, we bridge both ideas by demonstrating the excitation of magnetic auto-oscillations inside nano-scale DWs using pure spin currents.



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We study the current tunable microwave signal properties of nano-constriction based spin Hall nano-oscillators (SHNOs) in oblique magnetic fields as a function of the nano-constriction width, $w=$~50--140 nm. The threshold current is found to scale linearly with $w$, defining a constant threshold current density of $J_{th}=$ 1.7 $times$ 10$^{8}$ A/cm$^2$. While the current dependence of the microwave frequency shows the same generic non-monotonic behavior for all $wgeqslant$ 80 nm, the quality of the generated microwave signal improves strongly with $w$, showing a linear $w$ dependence for both the total power and the linewidth. As a consequence, the peak power for a 140 nm nano-constriction is about an order of magnitude higher than that of a 80 nm nano-constriction. The smallest nano-constriction, $w=$ 50 nm, exhibits a different behavior with a higher power and a worse linewidth indicating a crossover into a qualitatively different narrow-constriction regime.
130 - Zhongming Zeng , 2013
The use of spin transfer nano-oscillators (STNOs) to generate microwave signal in nanoscale devices have aroused tremendous and continuous research interest in recent years. Their key features are frequency tunability, nanoscale size, broad working temperature, and easy integration with standard silicon technology. In this feature article, we give an overview of recent developments and breakthroughs in the materials, geometry design and properties of STNOs. We focus in more depth on our latest advances in STNOs with perpendicular anisotropy showing a way to improve the output power of STNO towards the {mu}W range. Challenges and perspectives of the STNOs that might be productive topics for future research were also briefly discussed.
Spin transfer torque nano-oscillators are potential candidates for replacing the traditional inductor based voltage controlled oscillators in modern communication devices. Typical oscillator designs are based on trilayer magnetic tunnel junctions which are disadvantaged by low power outputs and poor conversion efficiencies. In this letter, we theoretically propose to use resonant spin filtering in pentalayer magnetic tunnel junctions as a possible route to alleviate these issues and present device designs geared toward a high microwave output power and an efficient conversion of the d.c. input power. We attribute these robust qualities to the resulting non-trivial spin current profiles and the ultra high tunnel magnetoresistance, both arising from resonant spin filtering. The device designs are based on the nonequilibrium Greens function spin transport formalism self-consistently coupled with the stochastic Landau-Lifshitz-Gilbert-Slonczewskis equation and the Poissons equation. We demonstrate that the proposed structures facilitate oscillator designs featuring a large enhancement in microwave power of around $775%$ and an efficiency enhancement of over $1300%$ in comparison with typical trilayer designs. We also rationalize the optimum operating regions via an analysis of the dynamic and static device resistances. This work sets stage for pentalyer spin transfer torque nano-oscillator device designs that extenuate most of the issues faced by the typical trilayer designs.
Spin waves (SWs), the collective precessional motion of spins in a magnetic system, have been proposed as a promising alternative system with low-power consumption for encoding information. Spin Hall nano-oscillator (SHNO), a new-type spintronic nano-device, can electrically excite and control spin waves in both nanoscale magnetic metals and insulators with low damping by the spin current due to spin Hall effect. Here, we will review recent progress about spin-wave excitation and experimental parameters dependent spectrum in SHNOs. The nanogap SHNOs based on in-plane magnetization Py/Pt exhibits a nonlinear self-localized bullet soliton localized at the center of the gap between the electrodes and a secondary high-frequency mode which coexists with the primary bullet mode at higher currents. While in the nanogap SHNOs with strong perpendicular magnetic anisotropy (PMA), besides both nonlinear bullet soliton and propagating spin-wave mode are achieved and controlled by varying the external magnetic field and current, the magnetic bubble skyrmion mode also can be excited at a low in-plane magnetic field. These SW modes show thermal-induced mode hopping behavior at high temperature due to the coupling between modes mediated by thermal-magnon-mediated scattering. Moreover, thanks to PMA-induced effective field, a single coherent mode also can be achieved without applying an external magnetic field. The strong nonlinear effect of spin-waves makes SHNOs easy to achieve synchronization with external microwave signals or mutual synchronization between multiple oscillators with improving the coherence and power of oscillation modes significantly. Spin-waves in SHNOs with an external free magnetic layer have a wide range of applications from as a nanoscale signal source of low-power consumption magnonic devices to spin-based neuromorphic computing systems in the field of artificial intelligence.
Due to their nonlinear properties, spin transfer nano-oscillators can easily adapt their frequency to external stimuli. This makes them interesting model systems to study the effects of synchronization and brings some opportunities to improve their microwave characteristics in view of their applications in information and communication technologies and to design innovative computing architectures. So far, mutual synchronization of spin transfer nano-oscillators through propagating spin-waves and exchange coupling in a common magnetic layer has been demonstrated. Here we show that the dipolar interaction is also an efficient mechanism to synchronize neighbouring oscillators. We experimentally study a pair of vortex-based spin-transfer nano-oscillators, in which mutual synchronization can be achieved despite a significant frequency mismatch between oscillators. Importantly, the coupling efficiency is controlled by the magnetic configuration of the vortices, as confirmed by an analytical model highlighting the physics at play in the synchronization process as well as by micromagnetic simulations.
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