No Arabic abstract
Na$_{2}$OsO$_{4}$ is an unusual quantum material that, in contrast to the common 5${d}^{2}$ oxides with spins = 1, owns a magnetically silent ground state with spin = 0 and a band gap at Fermi level attributed to a distortion in the OsO$_{6}$ octahedral sites. In this semiconductor, our low-temperature electrical transport measurements indicate an anomaly at 6.3 K with a power-law behavior inclining through the semiconductor-to-metal transition observed at 23 GPa. Even more peculiarly, we discover that before this transition, the material becomes more insulating instead of merely turning into a metal according to the conventional wisdom. To investigate the underlying mechanisms, we applied experimental and theoretical methods to examine the electronic and crystal structures comprehensively, and conclude that the enhanced insulating state at high pressure originates from the enlarged distortion of the OsO$_{6}$. It is such a distortion that widens the band gap and decreases the electron occupancy in Oss ${t}_{2g}$ orbital through an interplay of the lattice, charge, and orbital in the material, which is responsible for the changes observed in our experiments.
We report synthesis and magnetic properties of quasi-one-dimensional spin-$frac{1}{2}$ Heisenberg antiferromagnetic chain compound BaNa$_2$Cu(VO$_4$)$_2$. This orthovanadate has a centrosymmetric crystal structure, $C2/c$, where the magnetic Cu$^{2+}$ ions form spin chains. These chains are arranged in layers, with the chain direction changing by 62$^0$ between the two successive layers. Alternatively, the spin lattice can be viewed as anisotropic triangular layers upon taking the inter-chain interactions into consideration. Despite this potential structural complexity, temperature-dependent magnetic susceptibility, heat capacity, ESR intensity, and NMR shift agree well with the uniform spin-$1/2$ Heisenberg chain model with an intrachain coupling of $J/k_{rm B} simeq 5.6$ K. The saturation field obtained from the magnetic isotherm measurement consistently reproduces the value of $J/k_{rm B}$. Further, the $^{51}$V NMR spin-lattice relaxation rate mimics the 1D character in the intermediate temperature range, whereas magnetic long-range order sets in below $T_{rm N} simeq 0.25$ K. The effective interchain coupling is estimated to be $J_{perp}/k_{rm B} simeq 0.1$ K. The theoretical estimation of exchange couplings using band-structure calculations reciprocate our experimental findings and unambiguously establish the 1D character of the compound. Finally, the spin lattice of BaNa$_2$Cu(VO$_4$)$_2$ is compared with the chemically similar but not isostructural compound BaAg$_2$Cu(VO$_4)_2$.
We report a high-pressure study of tetragonal scheelite-type CaMoO4 up to 29 GPa. In order to characterize its high-pressure behavior, we have combined Raman and optical-absorption measurements with density-functional theory calculations. We have found evidence of a pressure-induced phase transition near 15 GPa. Experiments and calculations agree in assigning the high-pressure phase to a monoclinic fergusonite-type structure. The reported results are consistent with previous powder x-ray-diffraction experiments, but are in contradiction with the conclusions obtained from earlier Raman measurements, which support the existence of more than one phase transition in the pressure range covered by our studies. The observed scheelite-fergusonite transition induces significant changes in the electronic band gap and phonon spectrum of CaMoO4. We have determined the pressure evolution of the band gap for the low- and high-pressure phases as well as the frequencies and pressure dependences of the Raman-active and infrared-active modes. In addition, based upon calculations of the phonon dispersion of the scheelite phase, carried out at a pressure higher than the transition pressure, we propose a possible mechanism for the reported phase transition. Furthermore, from the calculations we determined the pressure dependence of the unit-cell parameters and atomic positions of the different phases and their room-temperature equations of state. These results are compared with previous experiments showing a very good agreement. Finally, information on bond compressibility is reported and correlated with the macroscopic compressibility of CaMoO4. The reported results are of interest for the many technological applications of this oxide.
Hydrogen is the most abundant element in the universe, and its properties under conditions of high temperature and pressure are crucial to understand the interior of of large gaseous planets and other astrophysical bodies. At ultra high pressures solid hydrogen has been predicted to transform into a quantum fluid, because of its high zero point motion. Here we report first principles two phase coexistence and Z method determinations of the melting line of solid hydrogen in a pressure range spanning from 30 to 600 GPa. Our results suggest that the melting line of solid hydrogen, as derived from classical molecular dynamics simulations, reaches a minimum of 367 K at about 430 GPa, at higher pressures the melting line of the atomics Cs IV phase regain a positive slope. In view of the possible importance of quantum effects in hydrogen at such low temperatures, we also determined the melting temperature of the atomic CsIV phase at pressures of 400, 500, 600 GPa, employing Feynman path integral simulations. These result in a downward shift of the classical melting line by about 100 K, and hint at a possible secondary maximum in the melting line in the region between 500 and 600 GPa, testifying to the importance of quantum effects in this system. Combined, our results imply that the stability field of the zero temperature quantum liquid phase, if it exists at all, would only occur at higher pressures than previously thought.
The Kitaev model of spin-1/2 on a honeycomb lattice supports degenerate topological ground states and may be useful in topological quantum computation. Na$_{2}$IrO$_{3}$ with honeycomb lattice of Ir ions have been extensively studied as candidates for the realization of the this model, due to the effective $J_{text{eff}}=1/2$ low-energy excitations produced by spin-orbit and crystal-field effect. As the eventual realization of Kitaev model has remained evasive, it is highly desirable and challenging to tune the candidate materials toward such end. It is well known external pressure often leads to dramatic changes to the geometric and electronic structure of materials. In this work, the high pressure phase diagram of Na$_{2}$IrO$_{3}$ is examined by first-principles calculations. It is found that Na$_{2}$IrO$_{3}$ undergoes a sequence of structural and magnetic phase transitions, from the magnetically ordered phase with space group $C2/m$ to two bond-ordered non-magnetic phases. The low-energy excitations in these high-pressure phases can be well described by the $J_{text{eff}}=1/2$ states.
Quasi-one-dimensional (1D) materials provide a superior platform for characterizing and tuning topological phases for two reasons: i) existence for multiple cleavable surfaces that enables better experimental identification of topological classification, and ii) stronger response to perturbations such as strain for tuning topological phases compared to higher dimensional crystal structures. In this paper, we present experimental evidence for a room-temperature topological phase transition in the quasi-1D material Bi$_4$I$_4$, mediated via a first order structural transition between two distinct stacking orders of the weakly-coupled chains. Using high resolution angle-resolved photoemission spectroscopy on the two natural cleavable surfaces, we identify the high temperature $beta$ phase to be the first weak topological insulator with gapless Dirac cones on the (100) surface and no Dirac crossing on the (001) surface, while in the low temperature $alpha$ phase, the topological surface state on the (100) surface opens a gap, consistent with a recent theoretical prediction of a higher-order topological insulator beyond the scope of the established topological materials databases that hosts gapless hinge states. Our results not only identify a rare topological phase transition between first-order and second-order topological insulators but also establish a novel quasi-1D material platform for exploring unprecedented physics.