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Register a new userInducing $n$- and $p$-type thermoelectricity in oxide superlattices by strain tuning of orbital-selective transport resonances
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By combining first-principles simulations including an on-site Coulomb repulsion term and Boltzmann theory, we demonstrate how the interplay of quantum confinement and epitaxial strain allows to selectively design $n$- and $p$-type thermoelectric response in (LaNiO$_3$)$_3$/(LaAlO$_3$)$_1(001)$ superlattices. In particular, varying strain from $-4.9$ to $+2.9%$ tunes the Ni orbital polarization at the interfaces from $-6$ to $+3%$. This is caused by an electron redistribution among Ni $3d_{x^2-y^2}$- and $3d_{z^2}$-derived quantum well states which respond differently to strain. Owing to this charge transfer, the position of emerging cross-plane transport resonances can be tuned relative to the Fermi energy. Already for moderate values of $1.5$ and $2.8%$ compressive strain, the cross-plane Seebeck coefficient reaches $sim -60$ and $+100$ $mu$V/K around room temperature, respectively. This provides a novel mechanism to tailor thermoelectric materials.
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The physics of oxide superlattices is considered for pristine (001) multilayers of the band insulators LaAlO3 and SrTiO3 with alternating p and n interfaces. First principles results and a model of capacitor plates offer a simple paradigm to understand their dielectric properties and the insulator to metal transition (IMT) at interfaces with increasing layer thickness. The charge at insulating interfaces is found to be as predicted from the formal ionic charges, not populations. Different relative layer thicknesses produce a spontaneous polarization of the system, and allow manipulation of the interfacial electron gas. Large piezoresistance effects can be obtained from the sensitivity of the IMT to lateral strain. Carrier densities are found to be ideal for exciton condensation.
The impact of epitaxial strain on the structural, electronic, and thermoelectric properties of p-type transparent Sr-doped LaCrO3 thin films has been investigated. For this purpose, high-quality fully strained La0.75Sr0.25CrO3 (LSCO) epitaxial thin films were grown by molecular beam epitaxy on three different (pseudo)cubic (001)-oriented perovskite oxide substrates: LaAlO3, (LaAlO3)0.3(Sr2AlTaO6)0.7, and DyScO3. The lattice mismatch between the LSCO films and the substrates induces in-plane strain ranging from -2.06% (compressive) to +1.75% (tensile). The electric conductivity can be controlled over 2 orders of magnitude, ranging from 0.5 S/cm (tensile strain) to 35 S/cm (compressive strain). Consistently, the Seebeck coefficient S can be finely tuned by a factor of almost 2 from 127 microV/K (compressive strain) to 208 microV/K (tensile strain). Interestingly, we show that the thermoelectric power factor can consequently be tuned by almost 2 orders of magnitude. The compressive strain yields a remarkable enhancement by a factor of 3 for 2% compressive strain with respect to almost relaxed films. These results demonstrate that epitaxial strain is a powerful lever to control the electric properties of LSCO and enhance its thermoelectric properties, which is of high interest for various devices and key applications such as thermal energy harvesters, coolers, transparent conductors, photocatalyzers, and spintronic memories.
We present evidence of strain-induced modulation of electron correlation effects and increased orbital anisotropy in the rutile phase of epitaxial VO$_2$/TiO$_2$ films from hard x-ray photoelectron spectroscopy and soft V L-edge x-ray absorption spectroscopy, respectively. By using the U(1) slave spin formalism, we further argue that the observed anisotropic correlation effects can be understood by a model of orbital selective Mott transition at a filling that is non-integer, but close to the half-filling. Because the overlaps of wave functions between $d$ orbitals are modified by the strain, orbitally-dependent renormalizations of the bandwidths and the crystal fields occur with the application of strain. These renormalizations generally result in different occupation numbers in different orbitals. We find that if the system has a non-integer filling number near the half-filling such as for VO$_2$, certain orbitals could reach an occupation number closer to half-filling under the strain, resulting in a strong reduction in the quasiparticle weight $Z_{alpha}$ of that orbital. Moreover, an orbital selective Mott transition, defined as the case with $Z_{alpha} = 0$ in some, but not all orbitals, could be accessed by epitaxial strain-engineering of correlated electron systems.
By introducing a superconducting gap in Weyl- or Dirac semi-metals, the superconducting state inherits the non-trivial topology of their electronic structure. As a result, Weyl superconductors are expected to host exotic phenomena such as non-zero-momentum pairing due to their chiral node structure, or zero- energy Majorana modes at the surface. These are of fundamental interest to improve our understanding of correlated topological systems, and moreover practical applications in phase coherent devices and quantum applications have been proposed. Proximity-induced superconductivity promises to allow such experiments on non-superconducting Weyl semi-metals. Here we show a new route to reliably fabricating superconducting microstructures from the non-superconducting Weyl semi-metal NbAs under ion irradiation. The significant difference in the surface binding energy of Nb and As leads to a natural enrichment of Nb at the surface during ion milling, forming a superconducting surface layer (Tc~3.5K). Being formed from the target crystal itself, the ideal contact between the superconductor and the bulk may enable an effective gapping of the Weyl nodes in the bulk due to the proximity effect. Simple ion irradiation may thus serve as a powerful tool to fabricating topological quantum devices from mono-arsenides, even on an industrial scale.
Multi-orbital physics in quasi-two-dimensional electron gases (q2DEGs) triggers unique phenomena not observed in bulk materials, such as unconventional superconductivity and magnetism. Here, we investigate the mechanism of orbital selective switching of the spin-polarization in the oxide q2DEG formed at the (001) interface between the LaAlO$_{3}$, EuTiO$_{3}$ and SrTiO$_{3}$ band insulators. By using density functional theory calculations, transport, magnetic and x-ray spectroscopy measurements, we find that the filling of titanium-bands with 3d$_{xz,yz}$ orbital character in the EuTiO3 layer and at the interface with SrTiO$_{3}$ induces an antiferromagnetic to ferromagnetic switching of the exchange interaction between Eu-4f$^{7}$ magnetic moments. The results explain the observation of the carrier density dependent ferromagnetic correlations and anomalous Hall effect in this q2DEG, and demonstrate how combined theoretical and experimental approaches can lead to a deeper understanding of novel electronic phases and serve as a guide for the materials design for advanced electronic applications.
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