Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userBreaking crystalline symmetry of epitaxial SnTe films by strain
165
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
SnTe belongs to the recently discovered class of topological crystalline insulators. Here we study the formation of line defects which break crystalline symmetry by strain in thin SnTe films. Strained SnTe(111) films are grown by molecular beam epitaxy on lattice- and thermal expansion coefficient-mismatched CdTe. To analyze the structural properties of the SnTe films we applied {em in-situ} reflection high energy electron diffraction, x-ray reflectometry, high resolution x-ray diffraction, reciprocal space mapping, and scanning tunneling microscopy. This comprehensive analytical approach reveals a twinned structure, tensile strain, bilayer surface steps and dislocation line defects forming a highly ordered dislocation network for thick films with local strains up to 31% breaking the translational crystal symmetry.
rate research
Read More
A morphotropic phase boundary driven by epitaxial strain has been observed in a lead-free multiferroic BiFeO3 thin films and the strain-driven phase transitions were widely reported to be iso-symmetric Cc-Cc ones by recent works. In this paper, we suggest that the tetragonal-like BiFeO3 phase identified in epitaxial films on (001) LaAlO3 single crystal substrates is monoclinic MC. This MC phase is different from MA type monoclinic phase reported in BiFeO3 films grown on low mismatch substrates, such as SrTiO3. This is confirmed not only by synchrotron x-ray studies but also by piezoresponse force microscopy measurements. The polarization vectors of the tetragonal-like phase lie in the (100) plane, not the (110) plane as previously reported. A phenomenological analysis was proposed to explain the formation of MC Phase. Such a low symmetry MC phase, with its linkage to MA phase and the multiphase coexistence open an avenue for large piezoelectric response in BiFeO3 films and shed light on a complete understanding towards possible polarization rotation paths and enhanced multiferroicity in BiFeO3 films mediated by epitaxial strain. This work may also aid the understanding of developing new lead-free strain-driven morphotropic phase boundary in other ferroic systems.
Oxygen-defect control has long been considered an influential tuning knob for producing various property responses in complex oxide films. In addition to physical property changes, modification to the lattice structure, specifically lattice expansion, with increasing oxygen vacancy concentrations has been reported often and has become the convention for oxide materials. However, the current understanding of the lattice behavior in oxygen-deficient films becomes disputable when considering compounds containing different bonding environments or atomic layering. Moreover, tensile strain has recently been discovered to stabilize oxygen vacancies in epitaxial films, which further complicates the interpretation of lattice behavior resulting from their appearance. Here, we report on the selective strain control of oxygen vacancy formation and resulting lattice responses in the layered, Ruddlesden-Popper phases, La1.85Sr0.15CuO4. We found that a drastically reduced Gibbs free energy for oxygen vacancy formation near the typical growth temperature for tensile-strained epitaxial LSCO accounts for the large oxygen non-stoichiometry. Additionally, oxygen vacancies form preferentially in the equatorial position of the CuO2 plane, leading to a lattice contraction, rather than the expected expansion, observed with apical oxygen vacancies. Since oxygen stoichiometry plays a key role in determining the physical properties of many complex oxides, the strong strain coupling of oxygen nonstoichiometry and the unusual structural response reported here can provide new perspectives and understanding to the structure and property relationships of many other functional oxide materials.
Understanding of the metal-insulator transition (MIT) in correlated transition-metal oxides is a fascinating topic in condensed matter physics and a precise control of such transitions plays a key role in developing novel electronic devices. Here we report an effective tuning of the MIT in epitaxial SrVO3 (SVO) films by expanding the out-of-plane lattice constant without changing in-plane lattice parameters, through helium ion irradiation. Upon increase of the ion fluence, we observe a MIT with a crossover from metallic to insulating state in SVO films. A combination of transport and magnetoresistance measurements in SVO at low temperatures reveals that the observed MIT is mainly ascribed to electron-electron interactions rather than disorder-induced localization. Moreover, these results are well supported by the combination of density functional theory and dynamical mean field theory (DFT+DMFT) calculations, further confirming the decrease of the bandwidth and the enhanced electron-electron interactions resulting from the expansion of out-of-plane lattice constant. These findings provide new insights into the understanding of MIT in correlated oxides and perspectives for the design of unexpected functional devices based on strongly correlated electrons.
High-index Bi2Se3(221) film has been grown on In2Se3-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi2Se3(221) can be attributed to the layered structure of Bi2Se3 crystal, where the epifilm grown along [221] is like a pile of weakly-coupled quintuple layer slabs stacked side-by-side on substrate. Finally, we have revealed the strong chemical bonding at the interface of Bi2Se3 and In2Se3 by plotting differential charge contour calculated by first-principle method. This study points to the feasibility of achieving strained TIs for manipulating the properties of topological systems.
The ability to manipulate oxygen anion defects rather than metal cations in complex oxides can facilitate creating new functionalities critical for emerging energy and device technologies. However, the difficulty in activating oxygen at reduced temperatures hinders the deliberate control of important defects, oxygen vacancies. Here, strontium cobaltite (SrCoOx) is used to demonstrate that epitaxial strain is a powerful tool for manipulating the oxygen vacancy concentration even under highly oxidizing environments and at annealing temperatures as low as 300 C. By applying a small biaxial tensile strain (2%), the oxygen activation energy barrier decreases by ~30%, resulting in a tunable oxygen deficient steady-state under conditions that would normally fully oxidize unstrained cobaltite. These strain-induced changes in oxygen stoichiometry drive the cobaltite from a ferromagnetic metal towards an antiferromagnetic insulator. The ability to decouple the oxygen vacancy concentration from its typical dependence on the operational environment is useful for effectively designing oxides materials with a specific oxygen stoichiometry.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
