No Arabic abstract
Topological insulators with the time reversal symmetry broken exhibit strong magnetoelectric and magneto-optic effects. While these effects are well-understood in or near equilibrium, nonequilibrium physics is richer yet less explored. We consider a topological insulator thin film, weakly coupled to a ferromagnet, out of thermal equilibrium with a cold environment (quantum electrodynamics vacuum). We show that the heat flow to the environment is strongly circularly polarized, thus carrying away angular momentum and exerting a purely fluctuation-driven torque on the topological insulator film. Utilizing the Keldysh framework, we investigate the universal nonequilibrium response of the TI to the temperature difference with the environment. Finally, we argue that experimental observation of this effect is within reach.
One of the hallmarks of bulk topology is the existence of robust boundary localized states. For instance, a conventional $d$ dimensional topological system hosts $d{-}1$ dimensional surface modes, which are protected by non-spatial symmetries. Recently, this idea has been extended to higher order topological phases with boundary modes that are localized in lower dimensions such as in the corners or in one dimensional hinges of the system. In this work, we demonstrate that a higher order topological phase can be engineered in a nonequilibrium state when the time-independent model does not possess any symmetry protected topological states. The higher order topology is protected by an emerging chiral symmetry, which is generated through the Floquet driving. Using both the exact numerical method and an effective high-frequency Hamiltonian obtained from the Brillouin-Wigner perturbation theory, we verify the emerging topological phase on a $pi$-flux square lattice. We show that the localized corner modes in our model are robust against a chiral symmetry preserving perturbation and can be classified as `extrinsic higher order topological phase. Finally, we identify a two dimensional topological invariant from the winding number of the corresponding sublattice symmetric one dimensional model. The latter model belongs to class AIII of ten-fold symmetry classification of topological matter.
We investigate the current-induced spin-orbit torque in thin topological insulator (TI) films in the presence of hybridization between the top and bottom surface states. We formulate the relation between spin torque and TI thickness, from which we derived the optimal value of the thickness to maximize the torque. We show numerically that in typical TI thin films made of $mathrm{Bi_2Se_3}$, the optimal thickness is about 3-5 nm.
The surface of topological insulators is proposed as a promising platform for spintronics and quantum information applications. In particular, when time- reversal symmetry is broken, topological surface states are expected to exhibit a wide range of exotic spin phenomena for potential implementation in electronics. Such devices need to be fabricated using nanoscale artificial thin films. It is of critical importance to study the spin behavior of artificial topological MBE thin films associated with magnetic dopants, and with regards to quantum size effects related to surface-to-surface tunneling as well as experimentally isolate time-reversal breaking from non-intrinsic surface electronic gaps. Here we present observation of the first (and thorough) study of magnetically induced spin reorientation phenomena on the surface of a topological insulator. Our results reveal dramatic rearrangements of the spin configuration upon magnetic doping contrasted with chemically similar nonmagnetic doping as well as with quantum tunneling phenomena in ultra-thin high quality MBE films. While we observe that the spin rearrangement induced by quantum tunneling occurs in a time-reversal invariant fashion, we present critical and systematic observation of an out-of-plane spin texture evolution correlated with magnetic interactions, which breaks time-reversal symmetry, demonstrating microscopic TRB at a Kramers point on the surface.
We perform photon-assisted-tunneling (PAT) experiments on a GaAs double quantum dot device under high microwave excitation power. Photon-assisted absorption of up to 14 photons is observed, when electron temperature (>1K) are far above the lattice temperature. Signatures of Landau-Zener-Stuckelberg (LZS) interference are found even in this non-equilibrium PAT spectrum. In addition, the charge state relaxation time T_1~8ns measured in this out of thermal equilibrium double quantum dot is in agreement with other previous reports.
The layered semimetal WTe_2 has recently been found to be a two-dimensional topological insulator (2D TI) when thinned down to a single monolayer, with conducting helical edge channels. We report here that intrinsic superconductivity can be induced in this monolayer 2D TI by mild electrostatic doping, at temperatures below 1 K. The 2D TI-superconductor transition can be easily driven by applying a just a small gate voltage. This discovery offers new possibilities for gate-controlled devices combining superconductivity and topology, and could provide a basis for quantum information schemes based on topological protection.