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Register a new userMicrofocus laser-ARPES on encapsulated mono-, bi-, and few-layer 1T-WTe$_2$
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Authors
Ir`ene Cucchi
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Two-dimensional crystals of semimetallic van der Waals materials hold much potential for the realization of novel phases, as exemplified by the recent discoveries of a polar metal in few layer 1T-WTe$_2$ and of a quantum spin Hall state in monolayers of the same material. Understanding these phases is particularly challenging because little is known from experiment about the momentum space electronic structure of ultrathin crystals. Here, we report direct electronic structure measurements of exfoliated mono-, bi-, and few-layer 1T-WTe$_2$ by laser-based micro-focus angle resolved photoemission. This is achieved by encapsulating with monolayer graphene a flake of WTe$_2$ comprising regions of different thickness. Our data support the recent identification of a quantum spin Hall state in monolayer 1T-WTe$_2$ and reveal strong signatures of the broken inversion symmetry in the bilayer. We finally discuss the sensitivity of encapsulated samples to contaminants following exposure to ambient atmosphere.
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Laser-based angle-resolved photoemission spectroscopy (ARPES) and two-photon photoemission spectroscopy (2PPES) are employed to study the valence electronic structure of the Weyl semimetal candidate Td-WTe$_2$ along two high symmetry directions and for binding energies between $approx$ -1 eV and 5 eV. The experimental data show a good agreement with band structure calculations. Polarization dependent measurements provide furthermore information on initial and intermediate state symmetry properties with respect to the mirror plane of the Td structure of WTe$_2$.
We study the second-order Raman process of mono- and few-layer MoTe$_2$, by combining {em ab initio} density functional perturbation calculations with experimental Raman spectroscopy using 532, 633 and 785 nm excitation lasers. The calculated electronic band structure and the density of states show that the electron-photon resonance process occurs at the high-symmetry M point in the Brillouin zone, where a strong optical absorption occurs by a logarithmic Van-Hove singularity. Double resonance Raman scattering with inter-valley electron-phonon coupling connects two of the three inequivalent M points in the Brillouin zone, giving rise to second-order Raman peaks due to the M point phonons. The predicted frequencies of the second-order Raman peaks agree with the observed peak positions that cannot be assigned in terms of a first-order process. Our study attempts to supply a basic understanding of the second-order Raman process occurring in transition metal di-chalcogenides (TMDs) and may provide additional information both on the lattice dynamics and optical processes especially for TMDs with small energy band gaps such as MoTe$_2$ or at high laser excitation energy.
We report electron transport studies in an encapsulated few-layer WTe$_2$ at low temperatures and high magnetic fields. The magnetoconductance reveals a temperature-induced crossover between weak antilocalization (WAL) and weak localization (WL) in quantum diffusive regime. We show that the crossover clearly manifests coexistence and competition among several characteristic lengths, including the dephasing length, the spin-flip length, and the mean free path. In addition, low temperature conductance increases logarithmically with the increase of temperature indicating an interplay of electron-electron interaction (EEI) and spin-orbit coupling (SOC). We demonstrate the existences and quantify the strengths of EEI and SOC which are considered to be responsible for gap opening in the quantum spin hall state in WTe2 at the monolayer limit.
Charge-density-waves (CDW) which occur mainly in low-dimensional systems have a macroscopic wave function similar to superfluids and superconductors. Kosterlitz-Thouless (KT) transition is observed in superfluids and superconductors, but the presence of KT transition in ultra-thin CDW systems has been an open problem. We report the direct real-space observation of CDWs with new order states in mono-, bi-, and tri-layer 1T-TaS_2 crystal by using a low voltage scanning-transmission-electron-microscope (STEM) without a substrate. This method is ideal to observe local atomic structures and possible defects. We clearly observed that the mono-layer crystal has a new triclinic stripe CDW order without the triple q condition q_1 + q_2 + q_3 = 0. A strong electron-phonon interaction gives rise to new crevasse (line) type defects instead of disclination (point) type defects due to the KT transition. These results reaffirm the importance of the electron-phonon interaction in mono-layer nanophysics.
Room temperature two-dimensional (2D) ferromagnetism is highly desired in practical spintronics applications. Recently, 1T phase CrTe2 (1T-CrTe2) nanosheets with five and thicker layers have been successfully synthesized, which all exhibit the properties of ferromagnetic (FM) metals with Curie temperatures around 305 K. However, whether the ferromagnetism therein can be maintained when continuously reducing the nanosheets thickness to monolayer limit remains unknown. Here, through first-principles calculations, we explore the evolution of magnetic properties of 1 to 6 layers CrTe2 nanosheets and several interesting points are found: First, unexpectedly, monolayer CrTe2 prefers a zigzag antiferromagnetic (AFM) state with its energy much lower than that of FM state. Second, in 2 to 4 layers CrTe2, both the intralayer and interlayer magnetic coupling are AFM. Last, when the number of layers is equal to or greater than five, the intralayer and interlayer magnetic coupling become FM. Theoretical analysis reveals that the in-plane lattice contraction of few layer CrTe2 compared to bulk is the main factor producing intralayer AFM-FM magnetic transition. At the same time, as long as the intralayer coupling gets FM, the interlayer coupling will concomitantly switch from AFM to FM. Such highly thickness dependent magnetism provides a new perspective to control the magnetic properties of 2D materials.
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