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Register a new userValley-Chern Effect with LC-Resonators: A Modular Platform
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The valley Chern-effect is theoretically demonstrated with a novel alternating current circuitry, where closed-loop LC-resonators sitting at the nodes of a honeycomb lattice are inductively coupled along the bonds. This enables us to generate a dynamical matrix which copies identically the Hamiltonian driving the electrons in graphene. The valley-Chern effect is generated by splitting the inversion symmetry of the lattice. After a detailed study of the Berry curvature landscape and of the localization of the interface modes, we derive an optimal configuration of the circuit. Furthermore, we show that Q-factors as high as $10^4$ can be achieved with reasonable materials and configurations.
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The ultra-strong light-matter coupling regime has been demonstrated in a novel three-dimensional inductor-capacitor (LC) circuit resonator, embedding a semiconductor two-dimensional electron gas in the capacitive part. The fundamental resonance of the LC circuit interacts with the intersubband plasmon excitation of the electron gas at $omega_c = 3.3$~THz with a normalized coupling strength $2Omega_R/omega_c = 0.27$. Light matter interaction is driven by the quasi-static electric field in the capacitors, and takes place in a highly subwavelength effective volume $V_{mathrm{eff}} = 10^{-6}lambda_0^3$ . This enables the observation of the ultra-strong light-matter coupling with $2.4times10^3$ electrons only. Notably, our fabrication protocol can be applied to the integration of a semiconductor region into arbitrary nano-engineered three dimensional meta-atoms. This circuit architecture can be considered the building block of metamaterials for ultra-low dark current detectors.
We propose a novel architecture for superconducting circuits to improve the efficiency of a quantum annealing system. To increase the capability of a circuit, it is desirable for a qubit to be coupled not only with adjacent qubits but also with other qubits located far away. We introduce a circuit that uses a lumped element resonator coupled each with one qubit. The resonator-qubit pairs are coupled by rf-superconducting quantum interference device (SQUID) based couplers. These pairs make a large quantum system for quantum annealer. This system could prepare the problem Hamiltonian and tune the parameters for quantum annealing procedure.
Since its discovery, Berry phase has been demonstrated to play an important role in many quantum systems. In gapped Bernal bilayer graphene, the Berry phase can be continuously tuned from zero to 2pi, which offers a unique opportunity to explore the tunable Berry phase on the physical phenomena. Here, we report experimental observation of Berry phases-induced valley splitting and crossing in moveable bilayer graphene p-n junction resonators. In our experiment, the bilayer graphene resonators are generated by combining the electric field of scanning tunneling microscope tip with the gap of bilayer graphene. A perpendicular magnetic field changes the Berry phase of the confined bound states in the resonators from zero to 2pi continuously and leads to the Berry phase difference for the two inequivalent valleys in the bilayer graphene. As a consequence, we observe giant valley splitting and unusual valley crossing of the lowest bound states. Our results indicate that the bilayer graphene resonators can be used to manipulate the valley degree of freedom in valleytronics.
Due to their possibility to encode information and realize low-energy-consumption quantum devices, control and manipulation of the valley degree of freedom have been widely studied in electronic systems. In contrast, the phononic counterpart--valley phononics--has been largely unexplored, despite the importance in both fundamental science and practical applications. In this work, we demonstrate that the control of valleys is also applicable for phonons in graphene by using a grain boundary. In particular, perfect valley filtering effect is observed at certain energy windows for flexural modes and found to be closely related to the anisotropy of phonon valley pockets. Moreover, valley filtering may be further improved using Fano-like resonance. Our findings reveal the possibility of valley phononics, paving the road towards purposeful phonon engineering and future valley phononics.
We show that Floquet engineering with circularly polarized light (CPL) can selectively split the valley degeneracy of a twisted multilayer graphene (TMG), and thus generate a controlled valley-polarized Floquet Chern flat band with tunable large Chern number. It offers a feasible optical way to manipulate the valley degree of freedom in moir{e} flat bands, and hence opens new opportunities to study the valleytronics of mori{e} flat band systems. We thus expect that many of the valley-related properties of TMG, e.g. orbital ferromagnetism, can be switched by CPL with proper doping. We reveal a Chern number hierarchy rule for the Floquet flat bands in a generic (M+N)-layer TMG. We also illustrate that the CPL effects on TMG strongly rely on the stacking chirality, which is an unique feature of TMG. All these phenomena could be tested in the twisted double bilayer graphene systems, which is the simplest example of TMG and has already been realized in experiment.
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