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Register a new userHigh-fidelity spin and optical control of single silicon vacancy centres in silicon carbide
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Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. Here, we release this stringent constraint by demonstrating outstanding optical and spin properties of single silicon vacancy centres in silicon carbide. Despite the lack of inversion symmetry, the systems particular wave function symmetry decouples its optical properties from magnetic and electric fields, as well as from local strain. This provides a high-fidelity spin-to-photon interface with exceptionally stable and narrow optical transitions, low inhomogeneous broadening, and a large fraction of resonantly emitted photons. Further, the weak spin-phonon coupling results in electron spin coherence times comparable with nitrogen-vacancy centres in diamond. This allows us to demonstrate coherent hyperfine coupling to single nuclear spins, which can be exploited as qubit memories. Our findings promise quantum network applications using integrated semiconductor-based spin-to-photon interfaces.
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Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single photon emission, good photostability, and long spin coherence time even at room temperature. As compared to diamond which is widely used for holding Nitrogen-vacancy centers, SiC has the advantage in terms of large-scale, high-quality and low cost growth, as well as advanced fabrication technique in optoelectronics, leading to the prospects for large scale quantum engineering. In this paper, we report experimental demonstration of the generation of nanoscale $V_{Si}$ single defect array through ion implantation without the need of annealing. $V_{Si}$ defects are generated in pre-determined locations with resolution of tens of nanometers. This can help in integrating $V_{Si}$ defects with the photonic structures which, in turn, can improve the emission and collection efficiency of $V_{Si}$ defects when it is used in spin photonic quantum network. On the other hand, the defects are shallow and they are generated $sim 40nm$ below the surface which can serve as critical resources in quantum sensing application.
Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective, near-telecom optical interface. However, previous studies were hindered by material quality resulting in limited coherent control. In this work, we implant Cr into commercial 4H-SiC and show optimal defect activation after annealing above 1600 C. We measure an ensemble optical hole linewidth of 31 MHz, an order of magnitude improvement compared to as-grown samples. An in-depth exploration of optical and spin dynamics reveals efficient spin polarization, coherent control, and readout with high fidelity (79%). We report T1 times greater than 1 second at cryogenic temperatures (15 K) with a T2* = 317 nanoseconds and a T2 = 81 microseconds, where spin dephasing times are currently limited by spin-spin interactions within the defect ensemble. Our results demonstrate the potential of Cr4+ in SiC as an extrinsic, optically active spin qubit.
Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, identification of suitable systems in scalable platforms remains a challenge. Here, we investigate the silicon vacancy centre in silicon carbide and demonstrate controlled emission of indistinguishable and distinguishable photons via coherent spin manipulation. Using strong off-resonant excitation and collecting photons from the ultra-stable zero-phonon line optical transitions, we show a two-photon interference contrast close to 90% in Hong-Ou-Mandel type experiments. Further, we exploit the systems intimate spin-photon relation to spin-control the colour and indistinguishability of consecutively emitted photons. Our results provide a deep insight into the systems spin-phonon-photon physics and underline the potential of the industrially compatible silicon carbide platform for measurement-based entanglement distribution and photonic cluster state generation. Additional coupling to quantum registers based on recently demonstrated coupled individual nuclear spins would further allow for high-level network-relevant quantum information processing, such as error correction and entanglement purification.
Defects in silicon carbide have been explored as promising spin systems in quantum technologies. However, for practical quantum metrology and quantum communication, it is critical to achieve the on-demand shallow spin-defect generation. In this work, we present the generation and characterization of shallow silicon vacancies in silicon carbide by using different implanted ions and annealing conditions. The conversion efficiency of silicon vacancy of helium ions is shown to be higher than that by carbon and hydrogen ions in a wide implanted fluence range. Furthermore, after optimizing annealing conditions, the conversion efficiency can be increased more than 2 times. Due to the high density of the generated ensemble defects, the sensitivity to sense a static magnetic field can be research as high as , which is about 15 times higher than previous results. By carefully optimizing implanted conditions, we further show that a single silicon vacancy array can be generated with about 80 % conversion efficiency, which reaches the highest conversion yield in solid state systems. The results pave the way for using on-demand generated shallow silicon vacancy for quantum information processing and quantum photonics.
Phonons are considered to be universal quantum transducers due to their ability to couple to a wide variety of quantum systems. Among these systems, solid-state point defect spins are known for being long-lived optically accessible quantum memories. Recently, it has been shown that inversion-symmetric defects in diamond, such as the negatively charged silicon vacancy center (SiV), feature spin qubits that are highly susceptible to strain. Here, we leverage this strain response to achieve coherent and low-power acoustic control of a single SiV spin, and perform acoustically driven Ramsey interferometry of a single spin. Our results demonstrate a novel and efficient method of spin control for these systems, offering a path towards strong spin-phonon coupling and phonon-mediated hybrid quantum systems.
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